IE57324B1 - Method and apparatus for producing large volume magnetoplasmas - Google Patents

Method and apparatus for producing large volume magnetoplasmas

Info

Publication number: IE57324B1
Authority: IE; Ireland
Prior art keywords: cavity; ions; electrons; auxiliary region; plasma
Prior art date: 1985-05-03

Application number

IE118186A

Other languages

English (en)

Other versions

IE861181L (en

Original Assignee

Univ Australian

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-05-03

Filing date

1986-05-02

Publication date

1992-07-29

1986-05-02 Application filed by Univ Australian filed Critical Univ Australian

1986-11-03 Publication of IE861181L publication Critical patent/IE861181L/en

1992-07-29 Publication of IE57324B1 publication Critical patent/IE57324B1/en

Links

238000000034 method Methods 0.000 title claims description 20
239000007789 gas Substances 0.000 claims description 37
150000002500 ions Chemical class 0.000 claims description 21
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
239000000463 material Substances 0.000 claims description 14
229910000831 Steel Inorganic materials 0.000 claims description 10
239000010959 steel Substances 0.000 claims description 10
229910052757 nitrogen Inorganic materials 0.000 claims description 7
SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 7
229960000909 sulfur hexafluoride Drugs 0.000 claims description 7
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
230000008878 coupling Effects 0.000 claims description 6
238000010168 coupling process Methods 0.000 claims description 6
238000005859 coupling reaction Methods 0.000 claims description 6
229910052760 oxygen Inorganic materials 0.000 claims description 6
239000001301 oxygen Substances 0.000 claims description 6
239000004065 semiconductor Substances 0.000 claims description 6
VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 6
239000000203 mixture Substances 0.000 claims description 5
239000002861 polymer material Substances 0.000 claims description 5
150000004767 nitrides Chemical class 0.000 claims description 4
125000004433 nitrogen atom Chemical group N* 0.000 claims description 4
125000004430 oxygen atom Chemical group O* 0.000 claims description 4
229920000642 polymer Polymers 0.000 claims description 4
TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
238000010494 dissociation reaction Methods 0.000 claims description 3
230000005593 dissociations Effects 0.000 claims description 3
125000005843 halogen group Chemical group 0.000 claims 3
210000002381 plasma Anatomy 0.000 description 54
238000005530 etching Methods 0.000 description 14
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
229910052710 silicon Inorganic materials 0.000 description 8
239000010703 silicon Substances 0.000 description 8
235000012431 wafers Nutrition 0.000 description 6
238000004519 manufacturing process Methods 0.000 description 5
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
238000001312 dry etching Methods 0.000 description 4
238000001020 plasma etching Methods 0.000 description 3
239000000919 ceramic Substances 0.000 description 2
239000011521 glass Substances 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000007935 neutral effect Effects 0.000 description 2
238000005086 pumping Methods 0.000 description 2
RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
239000005864 Sulphur Substances 0.000 description 1
BAIXFXQWXDUHQR-UHFFFAOYSA-N [O].C(Cl)(Cl)(Cl)Cl Chemical compound [O].C(Cl)(Cl)(Cl)Cl BAIXFXQWXDUHQR-UHFFFAOYSA-N 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
229910052731 fluorine Inorganic materials 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
238000011010 flushing procedure Methods 0.000 description 1
230000004927 fusion Effects 0.000 description 1
230000003993 interaction Effects 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
239000002184 metal Substances 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
239000005297 pyrex Substances 0.000 description 1
239000000758 substrate Substances 0.000 description 1
238000004381 surface treatment Methods 0.000 description 1

Landscapes

Drying Of Semiconductors (AREA)
Plasma Technology (AREA)
ing And Chemical Polishing (AREA)

IE118186A 1985-05-03 1986-05-02 Method and apparatus for producing large volume magnetoplasmas IE57324B1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
AUPH041985		1985-05-03

Publications (2)

Publication Number	Publication Date
IE861181L IE861181L (en)	1986-11-03
IE57324B1 true IE57324B1 (en)	1992-07-29

Family

ID=3771084

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IE118186A IE57324B1 (en)	1985-05-03	1986-05-02	Method and apparatus for producing large volume magnetoplasmas

Country Status (3)

Country	Link
JP (1)	JPH0724239B2 (ja)
DE (1)	DE3675149D1 (ja)
IE (1)	IE57324B1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4990229A (en) *	1989-06-13	1991-02-05	Plasma & Materials Technologies, Inc.	High density plasma deposition and etching apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS55134175A (en) *	1979-04-06	1980-10-18	Hitachi Ltd	Microwave plasma etching unit
JPS5779621A (en) *	1980-11-05	1982-05-18	Mitsubishi Electric Corp	Plasma processing device

1986
- 1986-05-02 JP JP61502794A patent/JPH0724239B2/ja not_active Expired - Lifetime
- 1986-05-02 DE DE8686903123T patent/DE3675149D1/de not_active Expired - Lifetime
- 1986-05-02 IE IE118186A patent/IE57324B1/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE3675149D1 (de)	1990-11-29
IE861181L (en)	1986-11-03
JPH0724239B2 (ja)	1995-03-15
JPS62502786A (ja)	1987-10-22

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Legal Events

Date	Code	Title	Description
2002-03-06	MM4A	Patent lapsed