IL102349A - Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface - Google Patents

Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface

Info

Publication number: IL102349A
Authority: IL; Israel
Prior art keywords: light receiving; receiving surface; substrate; insb; visible
Prior art date: 1991-08-08

Application number

IL10234992A

Other languages

English (en)

Other versions

IL102349A0 (en

Original Assignee

Santa Barbara Res Center

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-08-08

Filing date

1992-06-29

Publication date

1996-11-14

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24984060&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IL102349(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1992-06-29 Application filed by Santa Barbara Res Center filed Critical Santa Barbara Res Center

1993-01-14 Publication of IL102349A0 publication Critical patent/IL102349A0/xx

1996-11-14 Publication of IL102349A publication Critical patent/IL102349A/en

Links

WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title claims description 29
239000000758 substrate Substances 0.000 claims description 22
238000002161 passivation Methods 0.000 claims description 21
239000000463 material Substances 0.000 claims description 18
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
230000004044 response Effects 0.000 claims description 8
239000004065 semiconductor Substances 0.000 claims description 8
229910052581 Si3N4 Inorganic materials 0.000 claims description 7
230000005855 radiation Effects 0.000 claims description 7
229910052710 silicon Inorganic materials 0.000 claims description 7
239000010703 silicon Substances 0.000 claims description 7
229910052787 antimony Inorganic materials 0.000 claims description 6
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
229910052738 indium Inorganic materials 0.000 claims description 5
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
150000004767 nitrides Chemical class 0.000 claims description 5
239000000377 silicon dioxide Substances 0.000 claims description 4
235000012239 silicon dioxide Nutrition 0.000 claims description 4
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
238000001228 spectrum Methods 0.000 claims description 3
238000005286 illumination Methods 0.000 claims 1
230000000903 blocking effect Effects 0.000 description 22
239000011248 coating agent Substances 0.000 description 8
238000000576 coating method Methods 0.000 description 8
230000000694 effects Effects 0.000 description 7
229910052732 germanium Inorganic materials 0.000 description 7
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
238000000034 method Methods 0.000 description 7
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
230000007423 decrease Effects 0.000 description 4
230000008020 evaporation Effects 0.000 description 4
238000001704 evaporation Methods 0.000 description 4
229910052681 coesite Inorganic materials 0.000 description 3
229910052906 cristobalite Inorganic materials 0.000 description 3
230000003287 optical effect Effects 0.000 description 3
230000008569 process Effects 0.000 description 3
239000000243 solution Substances 0.000 description 3
229910052682 stishovite Inorganic materials 0.000 description 3
239000010409 thin film Substances 0.000 description 3
229910052905 tridymite Inorganic materials 0.000 description 3
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
238000002048 anodisation reaction Methods 0.000 description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
239000000969 carrier Substances 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
239000008367 deionised water Substances 0.000 description 2
238000000151 deposition Methods 0.000 description 2
238000001514 detection method Methods 0.000 description 2
239000010408 film Substances 0.000 description 2
238000003384 imaging method Methods 0.000 description 2
JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
230000009471 action Effects 0.000 description 1
239000010407 anodic oxide Substances 0.000 description 1
229910001439 antimony ion Inorganic materials 0.000 description 1
238000013459 approach Methods 0.000 description 1
238000003491 array Methods 0.000 description 1
229910052790 beryllium Inorganic materials 0.000 description 1
ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
230000001627 detrimental effect Effects 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
229940021013 electrolyte solution Drugs 0.000 description 1
239000008151 electrolyte solution Substances 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
238000010893 electron trap Methods 0.000 description 1
239000007789 gas Substances 0.000 description 1
239000002784 hot electron Substances 0.000 description 1
229960000443 hydrochloric acid Drugs 0.000 description 1
235000011167 hydrochloric acid Nutrition 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
239000004310 lactic acid Substances 0.000 description 1
235000014655 lactic acid Nutrition 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
238000005259 measurement Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
230000009467 reduction Effects 0.000 description 1
238000009877 rendering Methods 0.000 description 1
229910052594 sapphire Inorganic materials 0.000 description 1
239000010980 sapphire Substances 0.000 description 1
SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
229910000077 silane Inorganic materials 0.000 description 1
239000000126 substance Substances 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials

Landscapes

Light Receiving Elements (AREA)
Radiation Pyrometers (AREA)
Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Luminescent Compositions (AREA)

IL10234992A 1991-08-08 1992-06-29 Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface IL102349A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US74224891A	1991-08-08	1991-08-08

Publications (2)

Publication Number	Publication Date
IL102349A0 IL102349A0 (en)	1993-01-14
IL102349A true IL102349A (en)	1996-11-14

Family

ID=24984060

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IL10234992A IL102349A (en)	1991-08-08	1992-06-29	Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface

Country Status (6)

Country	Link
US (1)	US5449943A (fr)
JP (1)	JP2912093B2 (fr)
CA (1)	CA2070708C (fr)
FR (1)	FR2680280B1 (fr)
GB (1)	GB2258565B (fr)
IL (1)	IL102349A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA2141034C (fr) *	1993-05-28	1999-07-27	Ichiro Kasai	Dispositif et structure a l'antimoniure d'indium (insb) pour la detection de radiations infrarouges, visibles et ultraviolettes
US5444801A (en) *	1994-05-27	1995-08-22	Laughlin; Richard H.	Apparatus for switching optical signals and method of operation
US6198118B1 (en) *	1998-03-09	2001-03-06	Integration Associates, Inc.	Distributed photodiode structure
US6548878B1 (en)	1998-02-05	2003-04-15	Integration Associates, Inc.	Method for producing a thin distributed photodiode structure
US6753586B1 (en)	1998-03-09	2004-06-22	Integration Associates Inc.	Distributed photodiode structure having majority dopant gradient and method for making same
EP1280207B1 (fr) *	2000-04-04	2017-03-15	Hamamatsu Photonics K.K.	Detecteur d'energie a semi-conducteur
IES20010616A2 (en) *	2001-06-28	2002-05-15	Nat Microelectronics Res Ct	Microelectronic device and method of its manufacture
US6762473B1 (en) *	2003-06-25	2004-07-13	Semicoa Semiconductors	Ultra thin back-illuminated photodiode array structures and fabrication methods
JP5063875B2 (ja) *	2005-07-27	2012-10-31	パナソニック株式会社	光半導体装置の製造方法
IT1392502B1 (it) *	2008-12-31	2012-03-09	St Microelectronics Srl	Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
US20100163759A1 (en) *	2008-12-31	2010-07-01	Stmicroelectronics S.R.L.	Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process
US8247881B2 (en) *	2009-04-27	2012-08-21	University Of Seoul Industry Cooperation Foundation	Photodiodes with surface plasmon couplers
US8552480B2 (en) *	2010-03-12	2013-10-08	Flir Systems, Inc.	Aluminum indium antimonide focal plane array
US8552479B2 (en)	2010-03-12	2013-10-08	Flir Systems, Inc.	Aluminum indium antimonide focal plane array
US8513587B2 (en) *	2011-01-24	2013-08-20	Taiwan Semiconductor Manufacturing Company, Ltd.	Image sensor with anti-reflection layer and method of manufacturing the same

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3371213A (en) *	1964-06-26	1968-02-27	Texas Instruments Inc	Epitaxially immersed lens and photodetectors and methods of making same
US3483096A (en) *	1968-04-25	1969-12-09	Avco Corp	Process for making an indium antimonide infrared detector contact
DE1789046B1 (de) *	1968-09-27	1972-02-03	Siemens Ag	Strahlungsdetektor mit einem halbleiterkoerper mit photo thermomagnetischen effekt
US3723831A (en) *	1970-12-04	1973-03-27	Arco Corp	Indium antimonide infrared ray detector
JPS5060966U (fr) *	1973-10-02	1975-06-05
FR2376513A1 (fr) *	1976-12-31	1978-07-28	Radiotechnique Compelec	Dispositif semiconducteur muni d'un film protecteur
US4286277A (en) *	1977-11-22	1981-08-25	The United States Of America As Represented By The Secretary Of The Army	Planar indium antimonide diode array and method of manufacture
US4228365A (en) *	1978-10-03	1980-10-14	The United States Of America As Represented By The Secretary Of The Army	Monolithic infrared focal plane charge coupled device imager
JPS5629379A (en) *	1979-08-20	1981-03-24	Toshiba Corp	Manufacture of infrared ray detector of indium antimony
US4371587A (en) *	1979-12-17	1983-02-01	Hughes Aircraft Company	Low temperature process for depositing oxide layers by photochemical vapor deposition
JPS56116673A (en) *	1980-02-19	1981-09-12	Sharp Corp	Amorphous thin film solar cell
US4369458A (en) *	1980-07-01	1983-01-18	Westinghouse Electric Corp.	Self-aligned, flip-chip focal plane array configuration
FR2517864A1 (fr) *	1981-12-07	1983-06-10	Telecommunications Sa	Dispositif d'enregistrement et de lecture d'images
GB2132017B (en) *	1982-12-16	1986-12-03	Secr Defence	Semiconductor device array
JPS6021588A (ja) *	1983-07-16	1985-02-02	Univ Kyoto	磁気電気光効果光増幅器
FR2556135B1 (fr) *	1983-12-02	1986-09-19	Thomson Csf	Photo-diode a l'antimoniure d'indium et procede de fabrication
JPS60130274A (ja) *	1983-12-19	1985-07-11	Toshiba Corp	固体撮像装置
US4547622A (en) *	1984-04-27	1985-10-15	Massachusetts Institute Of Technology	Solar cells and photodetectors
WO1986000756A1 (fr) *	1984-07-10	1986-01-30	Gesellschaft Zur Förderung Der Industrieorientiert	Composant optoelectronique aux infrarouges
JPS61271844A (ja) *	1985-05-27	1986-12-02	Nec Corp	化合物半導体表面の不活性化方法
DE3617229C2 (de) *	1986-05-22	1997-04-30	Aeg Infrarot Module Gmbh	Strahlungsdetektor
US4734583A (en) *	1986-10-16	1988-03-29	General Electric Company	Readout circuit for dual-gate CID imagers with charge sharing corrected for subtractive error
JPS63150976A (ja) *	1986-12-12	1988-06-23	Fujitsu Ltd	赤外線検出装置
US4881234A (en) *	1987-03-18	1989-11-14	The United States Of America As Represented By The Secretary Of The Navy	Method for forming copious (F2+)A centers in certain stable, broadly tunable laser-active materials
JPS63268278A (ja) *	1987-04-24	1988-11-04	Matsushita Electric Ind Co Ltd	半導体放射線検出器
US5086328A (en) *	1988-02-08	1992-02-04	Santa Barbara Research Center	Photo-anodic oxide surface passivation for semiconductors
JPH03273688A (ja) *	1990-03-22	1991-12-04	Eastman Kodak Japan Kk	発光装置
US5262633A (en) *	1992-08-21	1993-11-16	Santa Barbara Research Center	Wideband anti-reflection coating for indium antimonide photodetector device and method of forming the same

1992
- 1992-06-08 CA CA002070708A patent/CA2070708C/fr not_active Expired - Fee Related
- 1992-06-29 IL IL10234992A patent/IL102349A/en not_active IP Right Cessation
- 1992-07-31 JP JP4223616A patent/JP2912093B2/ja not_active Expired - Lifetime
- 1992-07-31 GB GB9216349A patent/GB2258565B/en not_active Expired - Fee Related
- 1992-08-07 FR FR9209849A patent/FR2680280B1/fr not_active Expired - Fee Related
1994
- 1994-06-02 US US08/253,183 patent/US5449943A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
FR2680280A1 (fr)	1993-02-12
FR2680280B1 (fr)	1993-12-31
IL102349A0 (en)	1993-01-14
GB2258565B (en)	1995-05-10
CA2070708A1 (fr)	1993-02-09
US5449943A (en)	1995-09-12
JPH05206499A (ja)	1993-08-13
GB9216349D0 (en)	1992-09-16
CA2070708C (fr)	1997-04-29
JP2912093B2 (ja)	1999-06-28
GB2258565A (en)	1993-02-10

Legal Events

Date	Code	Title
1997-04-15	FF	Patent granted
1997-08-14	KB	Patent renewed
1998-12-06	KB	Patent renewed
1999-06-20	HC	Change of name of proprietor(s)
2001-06-14	RH	Patent void
2002-07-25	KB	Patent renewed
2007-05-21	MM9K	Patent not in force due to non-payment of renewal fees

Publication	Publication Date	Title
US5376810A (en)	1994-12-27	Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response
Razeghi et al.	1996	Semiconductor ultraviolet detectors
US5449943A (en)	1995-09-12	Visible and infrared indium antimonide (INSB) photodetector with non-flashing light receiving surface
US7297927B2 (en)	2007-11-20	Fabrication of low leakage-current backside illuminated photodiodes
Kobayashi et al.	1995	Zinc oxide/n‐Si junction solar cells produced by spray‐pyrolysis method
US4127932A (en)	1978-12-05	Method of fabricating silicon photodiodes
US20240063248A1 (en)	2024-02-22	Back-Illuminated Sensor And A Method Of Manufacturing A Sensor Using A Silicon On Insulator Wafer
US5646437A (en)	1997-07-08	Indium antimonide (InSb) photodetector device and structure for infrared, visible and ultraviolet radiation
CN1414642A (zh)	2003-04-30	InGaAs/InP PIN光电探测器及其制造工艺
Jiang et al.	2003	Demonstration of 256 x 256 focal plane array based on Al-free GaInAs-InP QWIP
Jerram et al.	2010	Back-thinned CMOS sensor optimization
JP2000196134A (ja)	2000-07-14	可視―ブラインドｕｖ検出器
US4034396A (en)	1977-07-05	Light sensor having good sensitivity to visible light
TW202535209A (zh)	2025-09-01	背照式感測器及製造其之方法
JP3207869B2 (ja)	2001-09-10	半導体装置の製造およびパッシベーション方法
CA1078948A (fr)	1980-06-03	Methode de fabrication de photodiodes au silicium
CA2141034C (fr)	1999-07-27	Dispositif et structure a l'antimoniure d'indium (insb) pour la detection de radiations infrarouges, visibles et ultraviolettes
Malik et al.	1999	Near-infrared photodetectors based on a HgInTe-semiconductor compound
US6103546A (en)	2000-08-15	Method to improve the short circuit current of the porous silicon photodetector
CN119054089A (zh)	2024-11-29	用于混合PIN PbSe中波长红外（MWIR）光电检测器的系统和方法
Schwarz et al.	1996	Tunable infrared detector with epitaxial silicide/silicon heterostructures
JPH0492481A (ja)	1992-03-25	光検知装置
Fiorito et al.	1978	Properties of Hg implanted Hg1− x Cd x Te infrared detectors
Laih et al.	1997	Characteristics of Si-based MSM photodetectors with an amorphous-crystalline heterojunction
Yang et al.	2014	Effects of interdigitated platinum finger geometry on spectral response characteristics of germanium metal-semiconductor-metal photodetectors