IL103347A - Photoresponsive device and method for fabricating the same including composition grading and recessed contacts for trapping minority carriers - Google Patents

Photoresponsive device and method for fabricating the same including composition grading and recessed contacts for trapping minority carriers

Info

Publication number
IL103347A
IL103347A IL10334792A IL10334792A IL103347A IL 103347 A IL103347 A IL 103347A IL 10334792 A IL10334792 A IL 10334792A IL 10334792 A IL10334792 A IL 10334792A IL 103347 A IL103347 A IL 103347A
Authority
IL
Israel
Prior art keywords
layer
photoresponsive
contacts
substrate
photoresponsive layer
Prior art date
Application number
IL10334792A
Other languages
English (en)
Original Assignee
Santa Barbara Res Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Res Center filed Critical Santa Barbara Res Center
Publication of IL103347A publication Critical patent/IL103347A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe

Landscapes

  • Light Receiving Elements (AREA)
IL10334792A 1991-10-15 1992-10-05 Photoresponsive device and method for fabricating the same including composition grading and recessed contacts for trapping minority carriers IL103347A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/777,874 US5241196A (en) 1991-10-15 1991-10-15 Photoresponsive device including composition grading and recessed contacts for trapping minority carriers

Publications (1)

Publication Number Publication Date
IL103347A true IL103347A (en) 1994-08-26

Family

ID=25111572

Family Applications (1)

Application Number Title Priority Date Filing Date
IL10334792A IL103347A (en) 1991-10-15 1992-10-05 Photoresponsive device and method for fabricating the same including composition grading and recessed contacts for trapping minority carriers

Country Status (5)

Country Link
US (1) US5241196A (de)
EP (1) EP0541973B1 (de)
JP (1) JP2642286B2 (de)
DE (1) DE69220756T2 (de)
IL (1) IL103347A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457331A (en) * 1993-04-08 1995-10-10 Santa Barbara Research Center Dual-band infrared radiation detector optimized for fabrication in compositionally graded HgCdTe
US6043548A (en) * 1993-04-14 2000-03-28 Yeda Research And Development Co., Ltd. Semiconductor device with stabilized junction
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
US5512511A (en) * 1994-05-24 1996-04-30 Santa Barbara Research Center Process for growing HgCdTe base and contact layer in one operation
JP2773730B2 (ja) * 1996-03-07 1998-07-09 日本電気株式会社 光伝導型赤外線検出素子
US7368762B2 (en) * 2005-01-06 2008-05-06 Teledyne Licensing, Llc Heterojunction photodiode
FR3109244B1 (fr) 2020-04-09 2022-04-01 Commissariat Energie Atomique Dispositif de photo-détection à gradient latéral de concentration en cadmium dans la zone de charge d’espace
WO2021205102A1 (fr) * 2020-04-09 2021-10-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives PROCÉDÉ DE FABRICATION D'UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117504A (en) * 1976-08-06 1978-09-26 Vadim Nikolaevich Maslov Heterogeneous semiconductor structure with composition gradient and method for producing same
GB2095898B (en) * 1981-03-27 1985-01-09 Philips Electronic Associated Methods of manufacturing a detector device
US4447470A (en) * 1982-12-06 1984-05-08 Ford Aerospace & Communications Corporation Composition control of CSVPE HgCdTe
FR2557562A1 (fr) * 1983-12-29 1985-07-05 Menn Roger Procede de fabrication de couches non conductrices a variation de composition atomique
JPS62130568A (ja) * 1985-12-03 1987-06-12 Fujitsu Ltd ヘテロ接合構造
WO1987003743A1 (en) * 1985-12-05 1987-06-18 Santa Barbara Research Center Structure and method of fabricating a trapping-mode photodetector
US4914495A (en) * 1985-12-05 1990-04-03 Santa Barbara Research Center Photodetector with player covered by N layer
JPH0719915B2 (ja) * 1986-11-05 1995-03-06 富士通株式会社 赤外線検知素子
JPS63164478A (ja) * 1986-12-26 1988-07-07 Fujitsu Ltd 赤外線検知素子の製造方法
JPS63240081A (ja) * 1987-03-27 1988-10-05 Nec Corp 光導電性半導体受光素子
JPH02100927A (ja) * 1988-10-07 1990-04-12 Ricoh Co Ltd 給紙トレイ
JPH02244671A (ja) * 1988-12-06 1990-09-28 Fujitsu Ltd 多素子型光検知素子及びその製造方法
JPH02218173A (ja) * 1989-02-20 1990-08-30 Fujitsu Ltd 光電導型赤外線検知素子
JPH02291179A (ja) * 1989-04-29 1990-11-30 Fujitsu Ltd 赤外線検知装置
US4961098A (en) * 1989-07-03 1990-10-02 Santa Barbara Research Center Heterojunction photodiode array
US4999694A (en) * 1989-08-18 1991-03-12 At&T Bell Laboratories Photodiode
JPH03204923A (ja) * 1989-12-29 1991-09-06 Fujitsu Ltd 化合物半導体結晶の製造方法
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions

Also Published As

Publication number Publication date
JP2642286B2 (ja) 1997-08-20
EP0541973A1 (de) 1993-05-19
DE69220756T2 (de) 1998-02-26
JPH05251726A (ja) 1993-09-28
EP0541973B1 (de) 1997-07-09
DE69220756D1 (de) 1997-08-14
US5241196A (en) 1993-08-31

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Legal Events

Date Code Title Description
KB Patent renewed
HC Change of name of proprietor(s)
RH1 Patent not in force