IL109194A - Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates - Google Patents
Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substratesInfo
- Publication number
- IL109194A IL109194A IL10919494A IL10919494A IL109194A IL 109194 A IL109194 A IL 109194A IL 10919494 A IL10919494 A IL 10919494A IL 10919494 A IL10919494 A IL 10919494A IL 109194 A IL109194 A IL 109194A
- Authority
- IL
- Israel
- Prior art keywords
- group
- monolayer
- multilayer stack
- arsenic
- ternary
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2926—Crystal orientations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3246—Monolayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
- H10P14/3432—Tellurides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3466—Crystal orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/043,644 US5306386A (en) | 1993-04-06 | 1993-04-06 | Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL109194A0 IL109194A0 (en) | 1994-06-24 |
| IL109194A true IL109194A (en) | 1996-10-16 |
Family
ID=21928166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL10919494A IL109194A (en) | 1993-04-06 | 1994-03-31 | Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US5306386A (fr) |
| EP (1) | EP0619615A3 (fr) |
| JP (1) | JPH076951A (fr) |
| IL (1) | IL109194A (fr) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5477809A (en) * | 1993-06-23 | 1995-12-26 | Nec Corporation | Method of growth of CdTe on silicon by molecular beam epitaxy |
| US5449927A (en) * | 1994-05-16 | 1995-09-12 | Santa Barbara Research Center | Multilayer buffer structure including II-VI compounds on a silicon substrate |
| JPH08107068A (ja) * | 1994-10-03 | 1996-04-23 | Nec Corp | ＭＢＥ法によるＳｉ基板上ＣｄＴｅ成長方法 |
| US6419742B1 (en) * | 1994-11-15 | 2002-07-16 | Texas Instruments Incorporated | method of forming lattice matched layer over a surface of a silicon substrate |
| US5742089A (en) * | 1995-06-07 | 1998-04-21 | Hughes Electronics | Growth of low dislocation density HGCDTE detector structures |
| US6010937A (en) * | 1995-09-05 | 2000-01-04 | Spire Corporation | Reduction of dislocations in a heteroepitaxial semiconductor structure |
| US5879962A (en) * | 1995-12-13 | 1999-03-09 | Minnesota Mining And Manufacturing Company | III-V/II-VI Semiconductor interface fabrication method |
| US5872016A (en) * | 1996-06-18 | 1999-02-16 | Lucent Technologies Inc. | Process of making an optoelectronic devices utilizing multiple quantum well pin structures |
| US6090637A (en) * | 1997-02-13 | 2000-07-18 | 3M Innovative Properties Company | Fabrication of II-VI semiconductor device with BeTe buffer layer |
| US5998235A (en) * | 1997-06-26 | 1999-12-07 | Lockheed Martin Corporation | Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials |
| DE19729186A1 (de) * | 1997-07-08 | 1999-01-14 | Siemens Ag | Verfahren zum Herstellen eines II-VI-Halbleiter-Bauelements |
| US6064078A (en) * | 1998-05-22 | 2000-05-16 | Xerox Corporation | Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities |
| US6833556B2 (en) * | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
| US7176483B2 (en) * | 2002-08-12 | 2007-02-13 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
| US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
| US7902029B2 (en) * | 2002-08-12 | 2011-03-08 | Acorn Technologies, Inc. | Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor |
| JP4131498B2 (ja) * | 2003-11-27 | 2008-08-13 | 財団法人名古屋産業科学研究所 | 半導体放射線検出器 |
| US7518207B1 (en) | 2004-03-19 | 2009-04-14 | The United States Of America As Represented By The Secretary Of The Navy | Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films |
| GB0407804D0 (en) * | 2004-04-06 | 2004-05-12 | Qinetiq Ltd | Manufacture of cadmium mercury telluride |
| JP2008508741A (ja) | 2004-08-02 | 2008-03-21 | キネテイツク・リミテツド | パターン加工済みのシリコン上でのテルル化カドミウム水銀の製造 |
| GB2433648A (en) * | 2005-12-21 | 2007-06-27 | Durham Scient Crystals Ltd | Radiation detector formed by deposition of bulk semiconductor crystal layers |
| JP5662001B2 (ja) * | 2005-12-21 | 2015-01-28 | クロメック リミテッド | 半導体デバイス及びその製造方法 |
| US7923688B2 (en) * | 2007-10-31 | 2011-04-12 | Raytheon Company | Multiple-band detector using frequency selective slots |
| US7972938B2 (en) * | 2008-06-05 | 2011-07-05 | Ues, Inc. | Methods of splitting CdZnTe layers from CdZnTe substrates for the growth of HgCdTe |
| US7923689B2 (en) * | 2009-04-30 | 2011-04-12 | Raytheon Company | Multi-band sub-wavelength IR detector having frequency selective slots and method of making the same |
| US8053734B2 (en) * | 2009-04-30 | 2011-11-08 | Raytehon Company | Nano-antenna for wideband coherent conformal IR detector arrays |
| US9837563B2 (en) * | 2009-12-17 | 2017-12-05 | Epir Technologies, Inc. | MBE growth technique for group II-VI inverted multijunction solar cells |
| CN103348488B (zh) * | 2010-09-22 | 2016-08-03 | 第一太阳能有限公司 | 具有金属硫氧化物窗口层的光伏装置 |
| US8993418B2 (en) | 2010-11-19 | 2015-03-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Shallow heavily doped semiconductor layer by cyclic selective epitaxial deposition process |
| US8772873B2 (en) | 2011-01-24 | 2014-07-08 | Tsinghua University | Ge-on-insulator structure and method for forming the same |
| CN102157432A (zh) * | 2011-01-24 | 2011-08-17 | 清华大学 | GeOI结构及其形成方法 |
| US9553116B2 (en) * | 2014-06-05 | 2017-01-24 | Teledyne Scientific & Imaging, Llc | Imaging detector having an integrated wide bandgap layer and method of manufacturing thereof |
| US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
| DE112017005855T5 (de) | 2016-11-18 | 2019-08-01 | Acorn Technologies, Inc. | Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe |
| US20190229226A1 (en) * | 2018-01-22 | 2019-07-25 | Uriel Solar, Inc. | Wide Band-Gap II-VI Heterojunction Solar Cell for Use In Tandem Structure |
| US11121302B2 (en) | 2018-10-11 | 2021-09-14 | SeeQC, Inc. | System and method for superconducting multi-chip module |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE758613A (fr) * | 1969-11-06 | 1971-05-06 | Consortium Elektrochem Ind | Procede et dispositif de fabrication de couches semi-conductrices epitactiques |
| US4935385A (en) * | 1988-07-22 | 1990-06-19 | Xerox Corporation | Method of forming intermediate buffer films with low plastic deformation threshold using lattice mismatched heteroepitaxy |
| JPH0239441A (ja) * | 1988-07-28 | 1990-02-08 | Fujitsu Ltd | 化合物半導体結晶の製造方法 |
| JPH0244736A (ja) * | 1988-08-05 | 1990-02-14 | Fujitsu Ltd | 化合物半導体結晶の製造方法 |
| US4931132A (en) * | 1988-10-07 | 1990-06-05 | Bell Communications Research, Inc. | Optical control of deposition of crystal monolayers |
| US4910154A (en) * | 1988-12-23 | 1990-03-20 | Ford Aerospace Corporation | Manufacture of monolithic infrared focal plane arrays |
| US5028561A (en) * | 1989-06-15 | 1991-07-02 | Hughes Aircraft Company | Method of growing p-type group II-VI material |
| US5021360A (en) * | 1989-09-25 | 1991-06-04 | Gte Laboratories Incorporated | Method of farbicating highly lattice mismatched quantum well structures |
| US5013685A (en) * | 1989-11-02 | 1991-05-07 | At&T Bell Laboratories | Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon |
| JP2557546B2 (ja) * | 1990-03-30 | 1996-11-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
-
1993
- 1993-04-06 US US08/043,644 patent/US5306386A/en not_active Expired - Lifetime
- 1993-09-08 US US08/118,084 patent/US5399206A/en not_active Expired - Lifetime
-
1994
- 1994-03-31 EP EP94105102A patent/EP0619615A3/fr not_active Withdrawn
- 1994-03-31 IL IL10919494A patent/IL109194A/en not_active IP Right Cessation
- 1994-04-05 JP JP6067402A patent/JPH076951A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US5399206A (en) | 1995-03-21 |
| IL109194A0 (en) | 1994-06-24 |
| EP0619615A2 (fr) | 1994-10-12 |
| EP0619615A3 (fr) | 1995-03-15 |
| US5306386A (en) | 1994-04-26 |
| JPH076951A (ja) | 1995-01-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| RH | Patent void |