IL123843A - Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors - Google Patents

Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors

Info

Publication number
IL123843A
IL123843A IL12384396A IL12384396A IL123843A IL 123843 A IL123843 A IL 123843A IL 12384396 A IL12384396 A IL 12384396A IL 12384396 A IL12384396 A IL 12384396A IL 123843 A IL123843 A IL 123843A
Authority
IL
Israel
Prior art keywords
workpiece
electrode
plasma
voltage
exposed
Prior art date
Application number
IL12384396A
Other languages
English (en)
Other versions
IL123843A0 (en
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of IL123843A0 publication Critical patent/IL123843A0/xx
Publication of IL123843A publication Critical patent/IL123843A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manipulator (AREA)
IL12384396A 1995-09-29 1996-09-30 Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors IL123843A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53692395A 1995-09-29 1995-09-29
US08/542,959 US5847918A (en) 1995-09-29 1995-10-13 Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors
PCT/US1996/015630 WO1997012396A1 (fr) 1995-09-29 1996-09-30 Procede et dispositif de verrouillage electrostatique pour pieces dielectriques dans des dispositifs de traitement sous vide

Publications (2)

Publication Number Publication Date
IL123843A0 IL123843A0 (en) 1998-10-30
IL123843A true IL123843A (en) 2001-05-20

Family

ID=27065313

Family Applications (1)

Application Number Title Priority Date Filing Date
IL12384396A IL123843A (en) 1995-09-29 1996-09-30 Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors

Country Status (9)

Country Link
US (1) US5847918A (fr)
EP (1) EP0852808A1 (fr)
JP (1) JPH11512692A (fr)
KR (1) KR19990063844A (fr)
CN (1) CN1182575C (fr)
AU (1) AU7379796A (fr)
CA (1) CA2233612A1 (fr)
IL (1) IL123843A (fr)
WO (1) WO1997012396A1 (fr)

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US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6028395A (en) * 1997-09-16 2000-02-22 Lam Research Corporation Vacuum plasma processor having coil with added conducting segments to its peripheral part
JPH11111830A (ja) * 1997-10-07 1999-04-23 Tokyo Electron Ltd 静電吸着装置および静電吸着方法、ならびにそれを用いた処理装置および処理方法
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US6790375B1 (en) 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP2001035907A (ja) * 1999-07-26 2001-02-09 Ulvac Japan Ltd 吸着装置
US6201208B1 (en) * 1999-11-04 2001-03-13 Wisconsin Alumni Research Foundation Method and apparatus for plasma processing with control of ion energy distribution at the substrates
JP2001229512A (ja) * 2000-02-10 2001-08-24 Tdk Corp 薄膜磁気ヘッドおよびその製造方法
CN1249777C (zh) * 2001-08-27 2006-04-05 松下电器产业株式会社 等离子体处理装置及等离子体处理方法
JP3481233B1 (ja) * 2002-05-27 2003-12-22 沖電気工業株式会社 キャパシタ構造の製造方法及びキャパシタ素子の製造方法
JP4186536B2 (ja) * 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
US7193173B2 (en) * 2004-06-30 2007-03-20 Lam Research Corporation Reducing plasma ignition pressure
US7126091B1 (en) 2005-03-23 2006-10-24 Eclipse Energy Systems, Inc. Workpiece holder for vacuum processing
US7511936B2 (en) * 2005-07-20 2009-03-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for dynamic plasma treatment of bipolar ESC system
US7683289B2 (en) * 2005-12-16 2010-03-23 Lam Research Corporation Apparatus and method for controlling plasma density profile
US20070211402A1 (en) * 2006-03-08 2007-09-13 Tokyo Electron Limited Substrate processing apparatus, substrate attracting method, and storage medium
JP2006253703A (ja) * 2006-04-07 2006-09-21 Toto Ltd 静電チャック及び絶縁性基板静電吸着処理方法
KR101098858B1 (ko) * 2006-05-15 2011-12-26 울박, 인크 클리닝 방법 및 진공 처리 장치
DE102006051550B4 (de) * 2006-10-30 2012-02-02 Fhr Anlagenbau Gmbh Verfahren und Vorrichtung zum Strukturieren von Bauteilen unter Verwendung eines Werkstoffs auf der Basis von Siliziumoxid
US8389872B2 (en) * 2009-07-29 2013-03-05 Hermes-Epitek Corp. Electrode structure adapted for high applied voltage and fabrication method thereof
WO2011151996A1 (fr) * 2010-06-01 2011-12-08 パナソニック株式会社 Dispositif et procédé de traitement par plasma
CN102023238B (zh) * 2010-11-04 2012-09-12 中国电子科技集团公司第十三研究所 用于SiC MESFET直流测试的夹具
JP6142305B2 (ja) * 2012-08-02 2017-06-07 サムコ株式会社 静電吸着方法及び静電吸着装置
KR102590964B1 (ko) * 2016-07-20 2023-10-18 삼성디스플레이 주식회사 정전척
KR102323877B1 (ko) * 2016-09-28 2021-11-10 한국전자통신연구원 전기 도금 장치
US11488852B2 (en) * 2019-05-31 2022-11-01 Applied Materials, Inc. Methods and apparatus for reducing high voltage arcing in semiconductor process chambers
CN117901432B (zh) * 2024-03-19 2024-07-05 成都骏创科技有限公司 一种可实时监测贴合压力和平面度的静电吸盘系统

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US4078851A (en) * 1977-02-22 1978-03-14 Bell Telephone Laboratories, Incorporated Electrostatic optical fiber holder
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
JPH0697676B2 (ja) * 1985-11-26 1994-11-30 忠弘 大見 ウエハサセプタ装置
US5179498A (en) * 1990-05-17 1993-01-12 Tokyo Electron Limited Electrostatic chuck device
US5255153A (en) * 1990-07-20 1993-10-19 Tokyo Electron Limited Electrostatic chuck and plasma apparatus equipped therewith
JPH0478133A (ja) * 1990-07-20 1992-03-12 Tokyo Electron Ltd プラズマ処理装置
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5310453A (en) * 1992-02-13 1994-05-10 Tokyo Electron Yamanashi Limited Plasma process method using an electrostatic chuck
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
KR100238629B1 (ko) * 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5478429A (en) * 1993-01-20 1995-12-26 Tokyo Electron Limited Plasma process apparatus
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
US5591269A (en) * 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
US5571366A (en) * 1993-10-20 1996-11-05 Tokyo Electron Limited Plasma processing apparatus
TW296534B (fr) * 1993-12-17 1997-01-21 Tokyo Electron Co Ltd
US5467249A (en) * 1993-12-20 1995-11-14 International Business Machines Corporation Electrostatic chuck with reference electrode
EP0668608A1 (fr) * 1994-02-22 1995-08-23 Applied Materials, Inc. Porte-substrat électrostatique avec une connexion d'électrode résistant à l'érosion
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
TW254030B (en) * 1994-03-18 1995-08-11 Anelva Corp Mechanic escape mechanism for substrate
US5491603A (en) * 1994-04-28 1996-02-13 Applied Materials, Inc. Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer

Also Published As

Publication number Publication date
AU7379796A (en) 1997-04-17
IL123843A0 (en) 1998-10-30
JPH11512692A (ja) 1999-11-02
CN1202275A (zh) 1998-12-16
CN1182575C (zh) 2004-12-29
KR19990063844A (ko) 1999-07-26
WO1997012396A1 (fr) 1997-04-03
CA2233612A1 (fr) 1997-04-03
US5847918A (en) 1998-12-08
EP0852808A1 (fr) 1998-07-15

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Legal Events

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KB Patent renewed
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees