IL132431A0 - Method and device for exposure control method and device for exposure and method of manufacture of device - Google Patents

Method and device for exposure control method and device for exposure and method of manufacture of device

Info

Publication number
IL132431A0
IL132431A0 IL13243198A IL13243198A IL132431A0 IL 132431 A0 IL132431 A0 IL 132431A0 IL 13243198 A IL13243198 A IL 13243198A IL 13243198 A IL13243198 A IL 13243198A IL 132431 A0 IL132431 A0 IL 132431A0
Authority
IL
Israel
Prior art keywords
exposure
manufacture
exposure control
control method
control
Prior art date
Application number
IL13243198A
Other languages
English (en)
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of IL132431A0 publication Critical patent/IL132431A0/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IL13243198A 1997-04-18 1998-04-17 Method and device for exposure control method and device for exposure and method of manufacture of device IL132431A0 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11625597 1997-04-18
JP10974897 1997-04-25
JP12452797 1997-05-14
PCT/JP1998/001777 WO1998048452A1 (fr) 1997-04-18 1998-04-17 Procede et dispositif de commande de l'exposition, procede et dispositif d'exposition, et procede de fabrication dudit dispositif

Publications (1)

Publication Number Publication Date
IL132431A0 true IL132431A0 (en) 2001-03-19

Family

ID=27311546

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13243198A IL132431A0 (en) 1997-04-18 1998-04-17 Method and device for exposure control method and device for exposure and method of manufacture of device

Country Status (7)

Country Link
US (1) US20050041226A1 (fr)
EP (1) EP1014429A4 (fr)
KR (1) KR20010006432A (fr)
AU (1) AU6853698A (fr)
IL (1) IL132431A0 (fr)
TW (1) TW463238B (fr)
WO (1) WO1998048452A1 (fr)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69837483T2 (de) 1997-07-25 2007-12-20 Nikon Corp. Belichtungsverfahren und Belichtungsapparat
DE19855106A1 (de) * 1998-11-30 2000-05-31 Zeiss Carl Fa Beleuchtungssystem für die VUV-Mikrolithographie
EP1014197B1 (fr) * 1998-12-16 2006-11-08 ASML Netherlands B.V. Appareil de projection lithographique
TW460755B (en) 1998-12-16 2001-10-21 Asm Lithography Bv Lithographic projection apparatus
JP2001110710A (ja) 1999-10-08 2001-04-20 Nikon Corp 露光装置、露光方法、および半導体デバイスの製造方法
JP2001196293A (ja) * 2000-01-14 2001-07-19 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
JP2001267239A (ja) 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP4585702B2 (ja) * 2001-02-14 2010-11-24 キヤノン株式会社 露光装置
US20030014146A1 (en) * 2001-07-12 2003-01-16 Kabushiki Kaisha Toshiba Dangerous process/pattern detection system and method, danger detection program, and semiconductor device manufacturing method
CN100389085C (zh) * 2002-04-23 2008-05-21 旭硝子株式会社 光学构件用合成石英玻璃、投影曝光装置及投影曝光方法
JP4366098B2 (ja) * 2003-03-04 2009-11-18 キヤノン株式会社 投影露光装置および方法ならびにデバイス製造方法
US8346497B2 (en) * 2003-03-26 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for testing semiconductor film, semiconductor device and manufacturing method thereof
US7384149B2 (en) * 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
TWI297808B (en) * 2003-09-08 2008-06-11 Fuji Corp Photo-amount regulation method and equipment
TWI311691B (en) * 2003-10-30 2009-07-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR100806036B1 (ko) * 2003-11-13 2008-02-26 동부일렉트로닉스 주식회사 반도체 웨이퍼 노광 방법
US7545481B2 (en) * 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7319229B2 (en) * 2003-12-29 2008-01-15 Kla-Tencor Technologies Corporation Illumination apparatus and methods
DE102004044669B4 (de) * 2004-09-15 2006-07-06 Texas Instruments Deutschland Gmbh Verfahren zur Überwachung des Lichtdosiergeräts eines Photolithographie-Systems
JP4752392B2 (ja) * 2005-08-11 2011-08-17 大日本印刷株式会社 パターン形成体の製造方法
JP2007065277A (ja) * 2005-08-31 2007-03-15 Topcon Corp 光学部材の透過率向上方法と、その方法によって透過率を向上させた光学部材
JP5305568B2 (ja) * 2006-05-22 2013-10-02 株式会社東芝 露光装置及びケミカルフィルタ寿命検知方法
JP2008277585A (ja) * 2007-04-27 2008-11-13 Canon Inc 露光装置の洗浄装置及び露光装置
JP2009180929A (ja) * 2008-01-30 2009-08-13 Fujifilm Corp 電子機器
NL1036545A1 (nl) * 2008-03-04 2009-09-07 Asml Netherlands Bv Lithographic Apparatus and Method.
US8929630B2 (en) * 2009-03-27 2015-01-06 Life Technologies Corporation Systems and methods for assessing images
JP5554620B2 (ja) * 2010-04-14 2014-07-23 株式会社ニューフレアテクノロジー 描画装置、描画方法および描画装置の異常診断方法
DE102012210071A1 (de) * 2012-06-15 2013-12-19 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage sowie Verfahren zum Steuern einer Projektionsbelichtungsanlage
JP6448220B2 (ja) * 2014-05-22 2019-01-09 キヤノン株式会社 露光装置、露光方法及びデバイスの製造方法
US9733567B2 (en) 2014-09-30 2017-08-15 Sii Semiconductor Corporation Reticle transmittance measurement method, and projection exposure method using the same
CN108121163B (zh) * 2016-11-29 2019-10-25 上海微电子装备（集团）股份有限公司 一种光源曝光剂量控制系统及控制方法
JP7550559B2 (ja) * 2020-07-27 2024-09-13 キヤノン株式会社 走査露光装置、走査露光方法および物品製造方法
CN114002918B (zh) * 2021-10-12 2022-07-15 清华大学 光刻曝光剂量的测算方法、装置、设备、控制系统及介质
US12259660B2 (en) 2021-10-26 2025-03-25 Industrial Technology Research Institute Inspection method and inspection platform for lithography
JP7765323B2 (ja) * 2022-03-23 2025-11-06 株式会社Ｓｃｒｅｅｎホールディングス 露光装置および露光方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652708B2 (ja) * 1984-11-01 1994-07-06 株式会社ニコン 投影光学装置
JP2682067B2 (ja) * 1988-10-17 1997-11-26 株式会社ニコン 露光装置及び露光方法
US5191374A (en) * 1988-11-17 1993-03-02 Nikon Corporation Exposure control apparatus
JP2998361B2 (ja) * 1991-11-26 2000-01-11 松下電器産業株式会社 顧客注文処理装置
JPH05335208A (ja) * 1992-06-02 1993-12-17 Nikon Corp 投影露光装置
JP2856608B2 (ja) * 1992-08-28 1999-02-10 山形日本電気株式会社 半導体露光装置
JP3301153B2 (ja) * 1993-04-06 2002-07-15 株式会社ニコン 投影露光装置、露光方法、及び素子製造方法
JP2862477B2 (ja) * 1993-06-29 1999-03-03 キヤノン株式会社 露光装置及び該露光装置を用いてデバイスを製造する方法
JP3093528B2 (ja) * 1993-07-15 2000-10-03 キヤノン株式会社 走査型露光装置
US5777724A (en) * 1994-08-24 1998-07-07 Suzuki; Kazuaki Exposure amount control device
KR100422887B1 (ko) * 1995-03-16 2005-02-02 가부시키가이샤 니콘 노광장치및방법
KR100210569B1 (ko) * 1995-09-29 1999-07-15 미따라이 하지메 노광방법 및 노광장치, 그리고 이를 이용한 디바이스제조방법
JP3459742B2 (ja) * 1996-01-17 2003-10-27 キヤノン株式会社 露光装置及びそれを用いたデバイスの製造方法

Also Published As

Publication number Publication date
WO1998048452A1 (fr) 1998-10-29
US20050041226A1 (en) 2005-02-24
EP1014429A1 (fr) 2000-06-28
KR20010006432A (ko) 2001-01-26
EP1014429A4 (fr) 2000-07-19
TW463238B (en) 2001-11-11
AU6853698A (en) 1998-11-13

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