IL136703A0 - Device for imaging radiation - Google Patents

Device for imaging radiation

Info

Publication number
IL136703A0
IL136703A0 IL13670398A IL13670398A IL136703A0 IL 136703 A0 IL136703 A0 IL 136703A0 IL 13670398 A IL13670398 A IL 13670398A IL 13670398 A IL13670398 A IL 13670398A IL 136703 A0 IL136703 A0 IL 136703A0
Authority
IL
Israel
Prior art keywords
cell
array
image
cells
read out
Prior art date
Application number
IL13670398A
Other languages
English (en)
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9726768A external-priority patent/GB2332800B/en
Application filed by Simage Oy filed Critical Simage Oy
Publication of IL136703A0 publication Critical patent/IL136703A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/443—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected two-dimensional [2D] regions of the array, e.g. for windowing or digital zooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Radiation (AREA)
  • Picture Signal Circuits (AREA)
IL13670398A 1997-12-18 1998-11-16 Device for imaging radiation IL136703A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9726768A GB2332800B (en) 1997-12-18 1997-12-18 Device for imaging radiation
GB9823403A GB2332586B (en) 1997-12-18 1998-10-26 Device for imaging radiation
PCT/EP1998/007524 WO1999033259A1 (en) 1997-12-18 1998-11-16 Device for imaging radiation

Publications (1)

Publication Number Publication Date
IL136703A0 true IL136703A0 (en) 2001-06-14

Family

ID=26312802

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13670398A IL136703A0 (en) 1997-12-18 1998-11-16 Device for imaging radiation

Country Status (8)

Country Link
US (1) US6252217B1 (de)
EP (1) EP1040650B1 (de)
JP (1) JP2001527342A (de)
AT (1) ATE202882T1 (de)
AU (1) AU2154099A (de)
DE (1) DE69801059T2 (de)
IL (1) IL136703A0 (de)
WO (1) WO1999033259A1 (de)

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US6239456B1 (en) 1998-08-19 2001-05-29 Photobit Corporation Lock in pinned photodiode photodetector
US6693670B1 (en) 1999-07-29 2004-02-17 Vision - Sciences, Inc. Multi-photodetector unit cell
EP1303978A4 (de) 2000-07-05 2006-08-09 Vision Sciences Inc Verfahren zur komprimierung des dynamikbereiches
US6400798B1 (en) * 2000-08-01 2002-06-04 Ge Medical Systems Global Technology Company, Llc Simple means for measuring the offset induced by photo-conductive FETs in a solid state X-ray detector
WO2002043366A2 (en) * 2000-11-27 2002-05-30 Vision Sciences Inc. Programmable resolution cmos image sensor
EP1353791A4 (de) * 2000-11-27 2006-11-15 Vision Sciences Inc Verringerung des grundrauschens bei bildsensoren
US6853402B2 (en) * 2001-01-30 2005-02-08 Xerox Corporation Combined multiplexing and offset correction for an image sensor array
US7088394B2 (en) * 2001-07-09 2006-08-08 Micron Technology, Inc. Charge mode active pixel sensor read-out circuit
DE10156627A1 (de) * 2001-11-17 2003-05-28 Philips Corp Intellectual Pty Anordnung mit elektrischen Elementen
US7081922B2 (en) * 2001-12-06 2006-07-25 Ray Mentzer Apparatus and method for obtaining average scene intensity information from a photo detector array
US7122802B2 (en) * 2002-04-19 2006-10-17 Ge Medical Systems Global Technology Company, Llc Method and apparatus for increasing the data acquisition rate in a digital detector
US7223981B1 (en) * 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7019277B2 (en) * 2003-03-13 2006-03-28 Psion Teklogix Systems Inc. Imaging device
JP4071157B2 (ja) * 2003-05-27 2008-04-02 セイコーインスツル株式会社 イメージセンサー
US7847846B1 (en) * 2006-05-16 2010-12-07 University Of Rochester CMOS image sensor readout employing in-pixel transistor current sensing
CN101680953B (zh) * 2007-05-16 2014-08-13 皇家飞利浦电子股份有限公司 虚拟pet探测器和用于pet的准像素化读出方案
US8035716B2 (en) * 2008-06-13 2011-10-11 Omnivision Technologies, Inc. Wide aperture image sensor pixel
US8184188B2 (en) * 2009-03-12 2012-05-22 Micron Technology, Inc. Methods and apparatus for high dynamic operation of a pixel cell
JP5233828B2 (ja) 2009-05-11 2013-07-10 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
US8629387B2 (en) 2010-07-07 2014-01-14 Raytheon Company Multi-layer sensor chip assembly and method for imaging generating image data with a frame-sum mode and a time-delay integration mode
JP7103664B2 (ja) * 2016-11-02 2022-07-20 プレシラブズ エスエー 検出装置、位置決めコード、および位置検出方法
GB2574619B (en) * 2018-06-12 2022-10-12 Res & Innovation Uk Image sensor
KR102902358B1 (ko) * 2019-11-20 2025-12-22 기가조트 테크널러지 인코포레이티드 스케일러블 픽셀 크기 이미지센서

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2548498B1 (fr) 1983-06-28 1985-10-18 Thomson Csf Procede de correction du niveau en sortie d'un dispositif a transfert de charge et dispositif pour sa mise en oeuvre
JPS60169282A (ja) * 1984-02-13 1985-09-02 Seiko Epson Corp 固体撮像素子の出力信号処理回路
JPS60172A (ja) * 1984-05-30 1985-01-05 Hitachi Ltd 固体撮像装置
US4835404A (en) * 1986-09-19 1989-05-30 Canon Kabushiki Kaisha Photoelectric converting apparatus with a switching circuit and a resetting circuit for reading and resetting a plurality of lines sensors
US5581301A (en) 1990-10-03 1996-12-03 Canon Kabushiki Kaisha Image processing apparatus with adjustable low-pass optical filter characteristics
JP3019632B2 (ja) * 1992-10-16 2000-03-13 カシオ計算機株式会社 フォトセンサシステム及びその駆動方法
WO1994030004A1 (en) 1993-06-16 1994-12-22 Cambridge Imaging Limited Improved imaging system
JP3513996B2 (ja) * 1995-08-07 2004-03-31 株式会社ニコン 固体撮像装置
US5719626A (en) * 1994-12-16 1998-02-17 Nikon Corporation Solid-state image pickup device

Also Published As

Publication number Publication date
JP2001527342A (ja) 2001-12-25
WO1999033259A1 (en) 1999-07-01
ATE202882T1 (de) 2001-07-15
AU2154099A (en) 1999-07-12
DE69801059D1 (de) 2001-08-09
US6252217B1 (en) 2001-06-26
EP1040650B1 (de) 2001-07-04
DE69801059T2 (de) 2001-10-18
EP1040650A1 (de) 2000-10-04

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