IL57890A - Device fabrication by plasmaetching of aluminum-rich surfaces - Google Patents

Device fabrication by plasmaetching of aluminum-rich surfaces

Info

Publication number: IL57890A
Authority: IL; Israel
Prior art keywords: plasmaetching; aluminum; device fabrication; rich surfaces; rich
Prior art date: 1978-07-31

Application number

IL57890A

Other languages

English (en)

Other versions

IL57890A0 (en

Original Assignee

Western Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-07-31

Filing date

1979-07-25

Publication date

1981-12-31

1979-07-25 Application filed by Western Electric Co filed Critical Western Electric Co

1979-11-30 Publication of IL57890A0 publication Critical patent/IL57890A0/xx

1981-12-31 Publication of IL57890A publication Critical patent/IL57890A/xx

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
- H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Drying Of Semiconductors (AREA)
ing And Chemical Polishing (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

IL57890A 1978-07-31 1979-07-25 Device fabrication by plasmaetching of aluminum-rich surfaces IL57890A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/929,567 US4256534A (en)	1978-07-31	1978-07-31	Device fabrication by plasma etching

Publications (2)

Publication Number	Publication Date
IL57890A0 IL57890A0 (en)	1979-11-30
IL57890A true IL57890A (en)	1981-12-31

Family

ID=25458063

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IL57890A IL57890A (en)	1978-07-31	1979-07-25	Device fabrication by plasmaetching of aluminum-rich surfaces

Country Status (14)

Country	Link
US (1)	US4256534A (fr)
JP (1)	JPS5914111B2 (fr)
AU (1)	AU524453B2 (fr)
BE (1)	BE877895A (fr)
CA (1)	CA1121306A (fr)
DE (1)	DE2930291A1 (fr)
ES (1)	ES482959A1 (fr)
FR (1)	FR2445622A1 (fr)
GB (1)	GB2026393B (fr)
IE (1)	IE48605B1 (fr)
IL (1)	IL57890A (fr)
IT (1)	IT1123506B (fr)
NL (1)	NL189738B (fr)
SE (1)	SE442357B (fr)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4569718A (en) *	1980-08-22	1986-02-11	At&T Bell Laboratories	Method for plasma etching III-V semiconductors with a BCl3 -Cl2 gas
JPS5747876A (en) *	1980-09-03	1982-03-18	Toshiba Corp	Plasma etching apparatus and method
DE3140675A1 (de) *	1980-10-14	1982-06-16	Branson International Plasma Corp., 94544 Hayward, Calif.	Verfahren und gasgemisch zum aetzen von aluminium
US4380488A (en) *	1980-10-14	1983-04-19	Branson International Plasma Corporation	Process and gas mixture for etching aluminum
US4373990A (en) *	1981-01-08	1983-02-15	Bell Telephone Laboratories, Incorporated	Dry etching aluminum
US4343677A (en) *	1981-03-23	1982-08-10	Bell Telephone Laboratories, Incorporated	Method for patterning films using reactive ion etching thereof
US4351696A (en) *	1981-10-28	1982-09-28	Fairchild Camera & Instrument Corp.	Corrosion inhibition of aluminum or aluminum alloy film utilizing bromine-containing plasma
US4372806A (en) *	1981-12-30	1983-02-08	Rca Corporation	Plasma etching technique
US4370196A (en) *	1982-03-25	1983-01-25	Rca Corporation	Anisotropic etching of aluminum
DE3215410A1 (de) *	1982-04-24	1983-10-27	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Verfahren zum herstellen von oeffnungen mit hilfe einer maske in einer auf einer unterlage befindlichen schicht
US4426246A (en)	1982-07-26	1984-01-17	Bell Telephone Laboratories, Incorporated	Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch
US4412885A (en) *	1982-11-03	1983-11-01	Applied Materials, Inc.	Materials and methods for plasma etching of aluminum and aluminum alloys
EP0117258B1 (fr) *	1983-02-23	1987-05-20	Ibm Deutschland Gmbh	Procédés pour réaliser des couches métalliques adhérentes à des supports en matière synthétique
US4505782A (en) *	1983-03-25	1985-03-19	Lfe Corporation	Plasma reactive ion etching of aluminum and aluminum alloys
US4778562A (en) *	1984-08-13	1988-10-18	General Motors Corporation	Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen
US4544444A (en) *	1984-08-15	1985-10-01	General Motors Corporation	Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas
JPS6184835A (ja) *	1984-10-02	1986-04-30	Matsushita Electric Ind Co Ltd	アルミニウムおよびアルミニウム―シリコン合金の反応性イオンエッチング方法
US5171525A (en) *	1987-02-25	1992-12-15	Adir Jacob	Process and apparatus for dry sterilization of medical devices and materials
US4931261A (en) *	1987-02-25	1990-06-05	Adir Jacob	Apparatus for dry sterilization of medical devices and materials
US4976920A (en) *	1987-07-14	1990-12-11	Adir Jacob	Process for dry sterilization of medical devices and materials
US4943417A (en) *	1987-02-25	1990-07-24	Adir Jacob	Apparatus for dry sterilization of medical devices and materials
US5200158A (en) *	1987-02-25	1993-04-06	Adir Jacob	Process and apparatus for dry sterilization of medical devices and materials
US4801427A (en) *	1987-02-25	1989-01-31	Adir Jacob	Process and apparatus for dry sterilization of medical devices and materials
US4818488A (en) *	1987-02-25	1989-04-04	Adir Jacob	Process and apparatus for dry sterilization of medical devices and materials
US4917586A (en) *	1987-02-25	1990-04-17	Adir Jacob	Process for dry sterilization of medical devices and materials
US5087418A (en) *	1987-02-25	1992-02-11	Adir Jacob	Process for dry sterilization of medical devices and materials
US4828649A (en) *	1987-07-16	1989-05-09	Texas Instruments Incorporated	Method for etching an aluminum film doped with silicon
US4919748A (en) *	1989-06-30	1990-04-24	At&T Bell Laboratories	Method for tapered etching
JPH03156927A (ja) *	1989-10-24	1991-07-04	Hewlett Packard Co <Hp>	アルミ・メタライゼーションのパターン形成方法
US5318664A (en) *	1990-06-25	1994-06-07	General Electric Company	Patterning of indium-tin oxide via selective reactive ion etching
US5211804A (en) *	1990-10-16	1993-05-18	Oki Electric Industry, Co., Ltd.	Method for dry etching
US5290396A (en) *	1991-06-06	1994-03-01	Lsi Logic Corporation	Trench planarization techniques
US5413966A (en) *	1990-12-20	1995-05-09	Lsi Logic Corporation	Shallow trench etch
DE4107006A1 (de) *	1991-03-05	1992-09-10	Siemens Ag	Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5248625A (en) *	1991-06-06	1993-09-28	Lsi Logic Corporation	Techniques for forming isolation structures
US5252503A (en) *	1991-06-06	1993-10-12	Lsi Logic Corporation	Techniques for forming isolation structures
US5225358A (en) *	1991-06-06	1993-07-06	Lsi Logic Corporation	Method of forming late isolation with polishing
US5286337A (en) *	1993-01-25	1994-02-15	North American Philips Corporation	Reactive ion etching or indium tin oxide
US5779926A (en) *	1994-09-16	1998-07-14	Applied Materials, Inc.	Plasma process for etching multicomponent alloys
JPH08130206A (ja) *	1994-10-31	1996-05-21	Sony Corp	Ａｌ系金属層のプラズマエッチング方法
JPH07169756A (ja) *	1994-11-07	1995-07-04	Semiconductor Energy Lab Co Ltd	プラズマエッチング方法
US7294578B1 (en)	1995-06-02	2007-11-13	Micron Technology, Inc.	Use of a plasma source to form a layer during the formation of a semiconductor device
JPH08306675A (ja) *	1996-05-13	1996-11-22	Semiconductor Energy Lab Co Ltd	プラズマエッチング方法
US6008140A (en)	1997-08-13	1999-12-28	Applied Materials, Inc.	Copper etch using HCI and HBr chemistry
US6165375A (en) *	1997-09-23	2000-12-26	Cypress Semiconductor Corporation	Plasma etching method
TWI246633B (en)	1997-12-12	2006-01-01	Applied Materials Inc	Method of pattern etching a low k dielectric layen
US6143476A (en) *	1997-12-12	2000-11-07	Applied Materials Inc	Method for high temperature etching of patterned layers using an organic mask stack
US5994235A (en)	1998-06-24	1999-11-30	Lam Research Corporation	Methods for etching an aluminum-containing layer
EP1394835A1 (fr) *	2002-08-29	2004-03-03	STMicroelectronics S.r.l.	Procédé et dispositif de détection d'entrée d'air par fuite dans un réacteur à plasma
US20040192059A1 (en) *	2003-03-28	2004-09-30	Mosel Vitelic, Inc.	Method for etching a titanium-containing layer prior to etching an aluminum layer in a metal stack
DE10324570A1 (de) *	2003-05-30	2004-12-23	Daimlerchrysler Ag	Vorrichtung und Verfahren zur Oberflächenbehandlung einer metallischen Laufbahn einer Maschine mittels Plasmatechnologie
US9051655B2 (en)	2013-09-16	2015-06-09	Applied Materials, Inc.	Boron ionization for aluminum oxide etch enhancement
US9484216B1 (en)	2015-06-02	2016-11-01	Sandia Corporation	Methods for dry etching semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3615956A (en) *	1969-03-27	1971-10-26	Signetics Corp	Gas plasma vapor etching process
US3994793A (en) *	1975-05-22	1976-11-30	International Business Machines Corporation	Reactive ion etching of aluminum
US4030967A (en) *	1976-08-16	1977-06-21	Northern Telecom Limited	Gaseous plasma etching of aluminum and aluminum oxide
CA1059882A (fr) *	1976-08-16	1979-08-07	Northern Telecom Limited	Burinage de l'aluminium et de l'alumine au plasma gazeux

1978
- 1978-07-31 US US05/929,567 patent/US4256534A/en not_active Expired - Lifetime
1979
- 1979-07-19 CA CA000332162A patent/CA1121306A/fr not_active Expired
- 1979-07-23 SE SE7906298A patent/SE442357B/sv unknown
- 1979-07-25 BE BE0/196455A patent/BE877895A/fr not_active IP Right Cessation
- 1979-07-25 FR FR7919157A patent/FR2445622A1/fr active Granted
- 1979-07-25 AU AU49236/79A patent/AU524453B2/en not_active Expired
- 1979-07-25 IL IL57890A patent/IL57890A/xx unknown
- 1979-07-26 GB GB7926036A patent/GB2026393B/en not_active Expired
- 1979-07-26 DE DE19792930291 patent/DE2930291A1/de not_active Ceased
- 1979-07-30 ES ES482959A patent/ES482959A1/es not_active Expired
- 1979-07-30 NL NLAANVRAGE7905867,A patent/NL189738B/xx not_active IP Right Cessation
- 1979-07-30 IT IT24774/79A patent/IT1123506B/it active
- 1979-07-31 JP JP54096878A patent/JPS5914111B2/ja not_active Expired
- 1979-08-08 IE IE1447/79A patent/IE48605B1/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE2930291A1 (de)	1980-02-21
FR2445622A1 (fr)	1980-07-25
AU4923679A (en)	1980-02-07
SE442357B (sv)	1985-12-16
AU524453B2 (en)	1982-09-16
CA1121306A (fr)	1982-04-06
BE877895A (fr)	1979-11-16
GB2026393A (en)	1980-02-06
NL7905867A (nl)	1980-02-04
IT1123506B (it)	1986-04-30
US4256534A (en)	1981-03-17
JPS5914111B2 (ja)	1984-04-03
IT7924774A0 (it)	1979-07-30
NL189738B (nl)	1993-02-01
JPS5521594A (en)	1980-02-15
ES482959A1 (es)	1980-03-01
IE791447L (en)	1980-01-31
SE7906298L (sv)	1980-02-01
IL57890A0 (en)	1979-11-30
IE48605B1 (en)	1985-03-20
FR2445622B1 (fr)	1984-08-10
GB2026393B (en)	1982-11-03

Legal Events

Date	Code	Title	Description
1998-02-08	KB	Patent renewed

Publication	Publication Date	Title
IL57890A (en)	1981-12-31	Device fabrication by plasmaetching of aluminum-rich surfaces
GB2015992B (en)	1982-07-14	Manufacture of para-nitro-diphenylamines
YU27779A (en)	1983-01-21	Device for manufacturing plates of gypsum
JPS54132575A (en)	1979-10-15	Manufacture of tetrahydrobenzoxocin
JPS54109924A (en)	1979-08-29	Manufacture of silylphosphate
JPS54128534A (en)	1979-10-05	Manufacture of nitrodiarylamines
JPS5547936A (en)	1980-04-05	Wiperrblade device of windowwwiper
JPS54100322A (en)	1979-08-08	Manufacture of nnacyltaurine
GB2018289B (en)	1982-09-08	Electrofining of lead
JPS54157554A (en)	1979-12-12	Manufacture of 66haloopregnane
JPS54122243A (en)	1979-09-21	Manufacture of 22nitrobenzaldehyde
JPS54131600A (en)	1979-10-12	Manufacture of borazin
JPS54151911A (en)	1979-11-29	Manufacture of chloracetylchloride
JPS54138872A (en)	1979-10-27	Manufacture of sulfene imides
IL58568A (en)	1983-10-31	Manufacture of 5-cyano-4-methyloxazole
JPS54135737A (en)	1979-10-22	Manufacture of trifluoromethylphenols
MY8500129A (en)	1985-12-31	Galenical compounds
JPS54144323A (en)	1979-11-10	Manufacture of ppxylene
JPS54163548A (en)	1979-12-26	Manufacture of 22oxyiminophenylacetonitrile
JPS54157525A (en)	1979-12-12	Manufacture of alphaachloroacetoacetoamide
JPS54148749A (en)	1979-11-21	Manufacture of monoarylthiourea
JPS54128530A (en)	1979-10-05	Manufacture of ppaminoodiphenylamine
JPS54117412A (en)	1979-09-12	Manufacture of 22nitroo22methyll11propanol
JPS54112858A (en)	1979-09-04	Manufacture of 22pyrrolidone
JPS54154752A (en)	1979-12-06	Manufacture of benzanthron