CA1059882A - Burinage de l'aluminium et de l'alumine au plasma gazeux - Google Patents

Burinage de l'aluminium et de l'alumine au plasma gazeux

Info

Publication number
CA1059882A
CA1059882A CA259,126A CA259126A CA1059882A CA 1059882 A CA1059882 A CA 1059882A CA 259126 A CA259126 A CA 259126A CA 1059882 A CA1059882 A CA 1059882A
Authority
CA
Canada
Prior art keywords
aluminum
etching
gaseous
layer
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA259,126A
Other languages
English (en)
Inventor
Sidney I.J. Ingrey
Robert G. Poulsen
Heinz J. Nentwich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=4106655&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA1059882(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Priority to CA259,126A priority Critical patent/CA1059882A/fr
Priority to GB24546/77A priority patent/GB1554335A/en
Priority to NL7706627A priority patent/NL7706627A/xx
Priority to DE2730156A priority patent/DE2730156C2/de
Priority to JP9230477A priority patent/JPS5322836A/ja
Priority to SE7709165A priority patent/SE7709165L/xx
Priority to FR7725071A priority patent/FR2362216A1/fr
Application granted granted Critical
Publication of CA1059882A publication Critical patent/CA1059882A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
CA259,126A 1976-08-16 1976-08-16 Burinage de l'aluminium et de l'alumine au plasma gazeux Expired CA1059882A (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CA259,126A CA1059882A (fr) 1976-08-16 1976-08-16 Burinage de l'aluminium et de l'alumine au plasma gazeux
GB24546/77A GB1554335A (en) 1976-08-16 1977-06-13 Gaseous plasma etching of aluminium and aluminium oxide
NL7706627A NL7706627A (nl) 1976-08-16 1977-06-16 Werkwijze voor het met een gasplasma etsen van aluminium en aluminiumoxyde.
DE2730156A DE2730156C2 (de) 1976-08-16 1977-07-04 Gas-Plasma-Ätzung von Aluminium und Aluminiumoxid
JP9230477A JPS5322836A (en) 1976-08-16 1977-08-02 Method of etching aluminum and aluminum oxide with gas
SE7709165A SE7709165L (sv) 1976-08-16 1977-08-12 Gasetsning av aluminium och aluminiumoxid
FR7725071A FR2362216A1 (fr) 1976-08-16 1977-08-16 Procede d'attaque par plasma gazeux de l'aluminium et de l'oxyde d'aluminium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA259,126A CA1059882A (fr) 1976-08-16 1976-08-16 Burinage de l'aluminium et de l'alumine au plasma gazeux

Publications (1)

Publication Number Publication Date
CA1059882A true CA1059882A (fr) 1979-08-07

Family

ID=4106655

Family Applications (1)

Application Number Title Priority Date Filing Date
CA259,126A Expired CA1059882A (fr) 1976-08-16 1976-08-16 Burinage de l'aluminium et de l'alumine au plasma gazeux

Country Status (7)

Country Link
JP (1) JPS5322836A (fr)
CA (1) CA1059882A (fr)
DE (1) DE2730156C2 (fr)
FR (1) FR2362216A1 (fr)
GB (1) GB1554335A (fr)
NL (1) NL7706627A (fr)
SE (1) SE7709165L (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9520303B2 (en) * 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118172A (en) * 1978-03-06 1979-09-13 Nichiden Varian Kk Method of dry etching aluminum
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4208241A (en) * 1978-07-31 1980-06-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4256534A (en) * 1978-07-31 1981-03-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
DE2924475A1 (de) * 1979-06-18 1981-01-15 Siemens Ag Verfahren zum herstellen einer metallisierung auf einem halbleiterkristall
JPS5623745A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Plasma etching device
US4341593A (en) * 1979-08-17 1982-07-27 Tokuda Seisakusyo, Ltd. Plasma etching method for aluminum-based films
JPS5747876A (en) * 1980-09-03 1982-03-18 Toshiba Corp Plasma etching apparatus and method
DE3103177A1 (de) * 1981-01-30 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von polysiliziumstrukturen bis in den 1 (my)m-bereich auf integrierte halbleiterschaltungen enthaltenden substraten durch plasmaaetzen
US4426246A (en) * 1982-07-26 1984-01-17 Bell Telephone Laboratories, Incorporated Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch
JP2861785B2 (ja) * 1994-02-15 1999-02-24 日本電気株式会社 半導体装置の配線の形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9520303B2 (en) * 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch

Also Published As

Publication number Publication date
FR2362216A1 (fr) 1978-03-17
GB1554335A (en) 1979-10-17
NL7706627A (nl) 1978-02-20
SE7709165L (sv) 1978-02-17
DE2730156A1 (de) 1978-02-23
JPS5322836A (en) 1978-03-02
DE2730156C2 (de) 1986-01-16
JPS5745310B2 (fr) 1982-09-27

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