Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
  • H10F39/10—Integrated devices
  • H10F39/12—Image sensors
  • H10F39/15—Charge-coupled device [CCD] image sensors
  • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
  • H10F39/1538—Time-delay and integration
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H15/00—Transversal filters
  • H03H15/02—Transversal filters using analogue shift registers
  • H03H15/023—Transversal filters using analogue shift registers with parallel-input configuration
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
  • H10D62/213—Channel regions of field-effect devices
  • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
  • H10F39/10—Integrated devices
  • H10F39/12—Image sensors
  • H10F39/15—Charge-coupled device [CCD] image sensors
  • H10F39/152—One-dimensional array CCD image sensors

Applications Claiming Priority (1)

Publications (1)

Family

ID=23294246

Family Applications (1)

Country Status (6)

Families Citing this family (2)

Family Cites Families (6)

• 1981
  • 1981-12-17 US US06/331,504 patent/US4479201A/en not_active Expired - Lifetime
• 1982
  • 1982-11-22 IL IL67320A patent/IL67320A0/xx unknown
  • 1982-12-07 EP EP82111335A patent/EP0082405B1/fr not_active Expired
  • 1982-12-07 DE DE8282111335T patent/DE3279932D1/de not_active Expired
  • 1982-12-14 AU AU91508/82A patent/AU563727B2/en not_active Ceased
  • 1982-12-17 JP JP57221720A patent/JPS58151058A/ja active Granted

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