IL74437A - Edge-emitting light emitting diode - Google Patents

Edge-emitting light emitting diode

Info

Publication number
IL74437A
IL74437A IL74437A IL7443785A IL74437A IL 74437 A IL74437 A IL 74437A IL 74437 A IL74437 A IL 74437A IL 7443785 A IL7443785 A IL 7443785A IL 74437 A IL74437 A IL 74437A
Authority
IL
Israel
Prior art keywords
active layer
edge
light emitting
confined
leaves
Prior art date
Application number
IL74437A
Other languages
English (en)
Other versions
IL74437A0 (en
Original Assignee
Codenoll Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Codenoll Technology Corp filed Critical Codenoll Technology Corp
Publication of IL74437A0 publication Critical patent/IL74437A0/xx
Publication of IL74437A publication Critical patent/IL74437A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures

Landscapes

  • Led Devices (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
IL74437A 1984-02-23 1985-02-24 Edge-emitting light emitting diode IL74437A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58284484A 1984-02-23 1984-02-23

Publications (2)

Publication Number Publication Date
IL74437A0 IL74437A0 (en) 1985-05-31
IL74437A true IL74437A (en) 1989-07-31

Family

ID=24330714

Family Applications (1)

Application Number Title Priority Date Filing Date
IL74437A IL74437A (en) 1984-02-23 1985-02-24 Edge-emitting light emitting diode

Country Status (8)

Country Link
US (1) US4766470A (fr)
EP (1) EP0174344B1 (fr)
JP (1) JPH0697703B2 (fr)
AT (1) ATE92671T1 (fr)
CA (1) CA1267716A (fr)
DE (1) DE3587496T2 (fr)
IL (1) IL74437A (fr)
WO (1) WO1985003809A1 (fr)

Families Citing this family (29)

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Publication number Priority date Publication date Assignee Title
US4779280A (en) * 1986-05-23 1988-10-18 Bernard Sermage Semiconductor laser equipped with means for reinjecting the spontaneous emission into the active layer
NL8700904A (nl) * 1987-04-16 1988-11-16 Philips Nv Halfgeleiderlaserinrichting en werkwijze voor het vervaardigen daarvan.
JPH01264275A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 半導体発光素子
JPH01289287A (ja) * 1988-05-17 1989-11-21 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体光増幅素子
US4864369A (en) * 1988-07-05 1989-09-05 Hewlett-Packard Company P-side up double heterojunction AlGaAs light-emitting diode
JP2763008B2 (ja) * 1988-11-28 1998-06-11 三菱化学株式会社 ダブルヘテロ型エピタキシャル・ウエハおよび発光ダイオード
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes
EP0582078B1 (fr) * 1992-08-05 2000-08-16 Motorola, Inc. Diode superluminescente du type à émission latérale
GB2270199B (en) * 1992-08-25 1995-05-10 Mitsubishi Cable Ind Ltd Semiconductor light emitting element
DE4231007C2 (de) * 1992-09-16 1998-08-20 Siemens Ag Verfahren zum Herstellen von Lumineszenzdioden
US5537433A (en) * 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter
JPH0832110A (ja) * 1994-07-19 1996-02-02 Oki Electric Ind Co Ltd 端面発光型ｌｅｄ、端面発光型発光素子の製造方法、端面発光型発光素子の発光特性測定方法
DE19652528A1 (de) * 1996-12-17 1998-06-18 Siemens Ag LED mit allseitiger Lichtauskopplung
RU2134007C1 (ru) 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Полупроводниковый оптический усилитель
RU2142665C1 (ru) 1998-08-10 1999-12-10 Швейкин Василий Иванович Инжекционный лазер
RU2142661C1 (ru) * 1998-12-29 1999-12-10 Швейкин Василий Иванович Инжекционный некогерентный излучатель
US6577658B1 (en) * 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
DE10220333B4 (de) * 2002-05-07 2008-03-27 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit einer Mehrzahl von Strukturelementen
JP2005158795A (ja) * 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 発光ダイオード及び半導体発光装置
US7274040B2 (en) * 2004-10-06 2007-09-25 Philips Lumileds Lighting Company, Llc Contact and omnidirectional reflective mirror for flip chipped light emitting devices
DE102004052688B4 (de) * 2004-10-29 2007-06-28 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip sowie optoelektronisches Bauteil mit solch einem Lumineszenzdiodenchip
KR100706507B1 (ko) * 2005-06-02 2007-04-11 엘지전자 주식회사 디지털 비디오 녹화 및 재생 장치에서의 복수의 타이틀복사 방법
US7635874B2 (en) * 2005-09-26 2009-12-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Edge-emitting LED assembly
JP4840884B2 (ja) * 2006-02-24 2011-12-21 クラフト・フーズ・グローバル・ブランズ・エルエルシー 液体充填チューインガム組成物
US7560746B2 (en) * 2007-02-28 2009-07-14 Samsung Electro-Mechanics Co., Ltd. Light emitting diodes and display apparatuses using the same
KR20100137524A (ko) * 2008-04-23 2010-12-30 에이전시 포 사이언스, 테크놀로지 앤드 리서치 발광 다이오드 구조, 램프 장치 및 발광 다이오드 구조를 형성하는 방법
FR3032950B1 (fr) 2015-02-20 2017-03-17 Automatisation Et Renovation Du Conditionnement Dans Les Ind Laitieres Arcil Machine et procede de convoyage d'articles
US11257388B2 (en) * 2019-10-30 2022-02-22 Honeywell International Inc. Obstruction detection and warning system and method

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Publication number Priority date Publication date Assignee Title
NL290588A (fr) * 1963-03-22
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers
US4016505A (en) * 1973-03-20 1977-04-05 Matsushita Electronics Corporation Double heterostructure semiconductor laser
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
US3982207A (en) * 1975-03-07 1976-09-21 Bell Telephone Laboratories, Incorporated Quantum effects in heterostructure lasers
US4063189A (en) * 1976-04-08 1977-12-13 Xerox Corporation Leaky wave diode laser
US4080617A (en) * 1976-06-09 1978-03-21 Northern Telecom Limited Optoelectronic devices with control of light propagation
GB1557072A (en) * 1976-10-13 1979-12-05 Standard Telephones Cables Ltd Stripe lears
US4184170A (en) * 1977-02-11 1980-01-15 Xerox Corporation Light emitting diode
US4152044A (en) * 1977-06-17 1979-05-01 International Telephone And Telegraph Corporation Galium aluminum arsenide graded index waveguide
JPS54155788A (en) * 1978-05-30 1979-12-08 Oki Electric Ind Co Ltd Semiconductor device
US4309670A (en) * 1979-09-13 1982-01-05 Xerox Corporation Transverse light emitting electroluminescent devices
US4317086A (en) * 1979-09-13 1982-02-23 Xerox Corporation Passivation and reflector structure for electroluminescent devices
JPS56107587A (en) * 1980-01-31 1981-08-26 Toshiba Corp End radiation type light emitting diode
US4325034A (en) * 1980-02-12 1982-04-13 Northern Telecom Limited Semiconductor lasers with integrally formed light emitting diodes
US4359774A (en) * 1980-11-04 1982-11-16 Rca Corporation Light emitting device
CA1204315A (fr) * 1984-02-08 1986-05-13 Pratt & Whitney Canada Inc. Fraisage en train multipasse

Also Published As

Publication number Publication date
IL74437A0 (en) 1985-05-31
DE3587496D1 (de) 1993-09-09
JPH0697703B2 (ja) 1994-11-30
JPS61502086A (ja) 1986-09-18
ATE92671T1 (de) 1993-08-15
CA1267716C (fr) 1990-04-10
EP0174344A1 (fr) 1986-03-19
EP0174344B1 (fr) 1993-08-04
DE3587496T2 (de) 1994-02-03
WO1985003809A1 (fr) 1985-08-29
CA1267716A (fr) 1990-04-10
US4766470A (en) 1988-08-23
EP0174344A4 (fr) 1986-07-08

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Legal Events

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KB Patent renewed
RH1 Patent not in force