IL97492A - Control of optical crosstalk betweeen adjacent photodetecting regions - Google Patents
Control of optical crosstalk betweeen adjacent photodetecting regionsInfo
- Publication number
- IL97492A IL97492A IL97492A IL9749291A IL97492A IL 97492 A IL97492 A IL 97492A IL 97492 A IL97492 A IL 97492A IL 9749291 A IL9749291 A IL 9749291A IL 97492 A IL97492 A IL 97492A
- Authority
- IL
- Israel
- Prior art keywords
- control
- optical crosstalk
- photodetecting regions
- adjacent photodetecting
- betweeen
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/490,011 US5049962A (en) | 1990-03-07 | 1990-03-07 | Control of optical crosstalk between adjacent photodetecting regions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL97492A0 IL97492A0 (en) | 1992-06-21 |
| IL97492A true IL97492A (en) | 1993-05-13 |
Family
ID=23946240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL97492A IL97492A (en) | 1990-03-07 | 1991-03-10 | Control of optical crosstalk betweeen adjacent photodetecting regions |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5049962A (de) |
| EP (1) | EP0445545A1 (de) |
| JP (1) | JPH04217363A (de) |
| IL (1) | IL97492A (de) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5241196A (en) * | 1991-10-15 | 1993-08-31 | Santa Barbara Research Center | Photoresponsive device including composition grading and recessed contacts for trapping minority carriers |
| US5446308A (en) * | 1994-04-04 | 1995-08-29 | General Electric Company | Deep-diffused planar avalanche photodiode |
| US5438217A (en) * | 1994-04-29 | 1995-08-01 | General Electric Company | Planar avalanche photodiode array with sidewall segment |
| US6091127A (en) * | 1997-04-02 | 2000-07-18 | Raytheon Company | Integrated infrared detection system |
| US6036770A (en) * | 1996-04-04 | 2000-03-14 | Raytheon Company | Method of fabricating a laterally continuously graded mercury cadmium telluride layer |
| US6133615A (en) * | 1998-04-13 | 2000-10-17 | Wisconsin Alumni Research Foundation | Photodiode arrays having minimized cross-talk between diodes |
| US6452220B1 (en) | 1999-12-09 | 2002-09-17 | The Regents Of The University Of California | Current isolating epitaxial buffer layers for high voltage photodiode array |
| DE10223202A1 (de) * | 2002-05-24 | 2003-12-11 | Fraunhofer Ges Forschung | Photodiode |
| US7709921B2 (en) * | 2008-08-27 | 2010-05-04 | Udt Sensors, Inc. | Photodiode and photodiode array with improved performance characteristics |
| US8164151B2 (en) * | 2007-05-07 | 2012-04-24 | Osi Optoelectronics, Inc. | Thin active layer fishbone photodiode and method of manufacturing the same |
| US7656001B2 (en) * | 2006-11-01 | 2010-02-02 | Udt Sensors, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
| US7655999B2 (en) | 2006-09-15 | 2010-02-02 | Udt Sensors, Inc. | High density photodiodes |
| US7057254B2 (en) * | 2003-05-05 | 2006-06-06 | Udt Sensors, Inc. | Front illuminated back side contact thin wafer detectors |
| US8120023B2 (en) * | 2006-06-05 | 2012-02-21 | Udt Sensors, Inc. | Low crosstalk, front-side illuminated, back-side contact photodiode array |
| US8035183B2 (en) * | 2003-05-05 | 2011-10-11 | Udt Sensors, Inc. | Photodiodes with PN junction on both front and back sides |
| US7279731B1 (en) * | 2006-05-15 | 2007-10-09 | Udt Sensors, Inc. | Edge illuminated photodiodes |
| US7880258B2 (en) * | 2003-05-05 | 2011-02-01 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
| US7256470B2 (en) * | 2005-03-16 | 2007-08-14 | Udt Sensors, Inc. | Photodiode with controlled current leakage |
| US8686529B2 (en) * | 2010-01-19 | 2014-04-01 | Osi Optoelectronics, Inc. | Wavelength sensitive sensor photodiodes |
| US8519503B2 (en) | 2006-06-05 | 2013-08-27 | Osi Optoelectronics, Inc. | High speed backside illuminated, front side contact photodiode array |
| US7576369B2 (en) | 2005-10-25 | 2009-08-18 | Udt Sensors, Inc. | Deep diffused thin photodiodes |
| JP2006073575A (ja) * | 2004-08-31 | 2006-03-16 | National Univ Corp Shizuoka Univ | 放射線検出器 |
| WO2007077286A1 (en) * | 2006-01-05 | 2007-07-12 | Artto Aurola | Semiconductor radiation detector detecting visible light |
| US9178092B2 (en) | 2006-11-01 | 2015-11-03 | Osi Optoelectronics, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
| FR2922320B1 (fr) * | 2007-10-12 | 2012-05-11 | Centre Nat Rech Scient | Dispositif de detection de la desintegration de radioisotopes dans un tissu biologique. |
| US20100053802A1 (en) * | 2008-08-27 | 2010-03-04 | Masaki Yamashita | Low Power Disk-Drive Motor Driver |
| EP2335288A4 (de) | 2008-09-15 | 2013-07-17 | Osi Optoelectronics Inc | Fischgräten-fotodiode mit dünner aktiver schicht und flacher n+-schicht sowie herstellungsverfahren dafür |
| US8399909B2 (en) | 2009-05-12 | 2013-03-19 | Osi Optoelectronics, Inc. | Tetra-lateral position sensing detector |
| US8912615B2 (en) | 2013-01-24 | 2014-12-16 | Osi Optoelectronics, Inc. | Shallow junction photodiode for detecting short wavelength light |
| FR3020176B1 (fr) * | 2014-04-22 | 2017-09-29 | Commissariat Energie Atomique | Matrice de photodiodes en cdhgte |
| FR3021807B1 (fr) | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | Matrice de photodiodes mesa a ftm amelioree |
| KR102632100B1 (ko) * | 2016-09-09 | 2024-02-01 | 주식회사 디비하이텍 | 광 검출 장치 |
| US11335821B2 (en) * | 2020-04-30 | 2022-05-17 | Omnivision Technologies, Inc. | Low noise silicon germanium image sensor |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3677280A (en) * | 1971-06-21 | 1972-07-18 | Fairchild Camera Instr Co | Optimum high gain-bandwidth phototransistor structure |
| US3858306A (en) * | 1971-08-05 | 1975-01-07 | Honeywell Inc | Alloy junctions in mercury cadmium telluride |
| FR2168934B1 (de) * | 1972-01-27 | 1977-04-01 | Telecommunications Sa | |
| JPS5641186B2 (de) * | 1972-03-03 | 1981-09-26 | ||
| FR2281650A1 (fr) * | 1974-08-06 | 1976-03-05 | Telecommunications Sa | Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede |
| FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
| US4053919A (en) * | 1976-08-18 | 1977-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | High speed infrared detector |
| US4105478A (en) * | 1977-01-06 | 1978-08-08 | Honeywell, Inc. | Doping hgcdte with li |
| US4206003A (en) * | 1977-07-05 | 1980-06-03 | Honeywell Inc. | Method of forming a mercury cadmium telluride photodiode |
| JPS5527657A (en) * | 1978-08-19 | 1980-02-27 | Fujitsu Ltd | Method of manufacturing infrared ray detecting element |
| GB2095898B (en) * | 1981-03-27 | 1985-01-09 | Philips Electronic Associated | Methods of manufacturing a detector device |
| EP0068652B1 (de) * | 1981-06-24 | 1988-05-25 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Photodioden |
| JPS5912034B2 (ja) * | 1981-07-22 | 1984-03-19 | 沖電気工業株式会社 | 受光半導体装置 |
| FR2536908B1 (fr) * | 1982-11-30 | 1986-03-14 | Telecommunications Sa | Procede de fabrication d'un detecteur infrarouge matriciel a eclairage par la face avant |
| US4717946A (en) * | 1983-04-20 | 1988-01-05 | Applied Solar Energy Corporation | Thin line junction photodiode |
| NL187416C (nl) * | 1983-07-14 | 1991-09-16 | Philips Nv | Stralingsgevoelige halfgeleiderinrichting. |
| JPS60157273A (ja) * | 1984-01-25 | 1985-08-17 | Matsushita Electric Ind Co Ltd | 薄膜ホトトランジスタの製造方法 |
| US4646120A (en) * | 1985-03-21 | 1987-02-24 | The United States Of America As Represented By The Secretary Of The Army | Photodiode array |
| JPS62119976A (ja) * | 1985-11-20 | 1987-06-01 | Fujitsu Ltd | 赤外線検知素子 |
| US4639756A (en) * | 1986-05-05 | 1987-01-27 | Santa Barbara Research Center | Graded gap inversion layer photodiode array |
| FR2604298B1 (fr) * | 1986-09-19 | 1988-10-28 | Commissariat Energie Atomique | Procede de realisation d'une prise de contact electrique sur un substrat en hgcdte de conductivite p et application a la fabrication d'une diode n/p |
| JPH0748560B2 (ja) * | 1986-11-18 | 1995-05-24 | 株式会社東芝 | 半導体受光装置の製造方法 |
| JPH01201971A (ja) * | 1988-02-05 | 1989-08-14 | Fujitsu Ltd | 赤外線検知装置 |
| FR2633101B1 (fr) * | 1988-06-16 | 1992-02-07 | Commissariat Energie Atomique | Photodiode et matrice de photodiodes sur hgcdte et leurs procedes de fabrication |
-
1990
- 1990-03-07 US US07/490,011 patent/US5049962A/en not_active Expired - Fee Related
-
1991
- 1991-02-08 EP EP91101783A patent/EP0445545A1/de not_active Withdrawn
- 1991-03-07 JP JP3067890A patent/JPH04217363A/ja active Pending
- 1991-03-10 IL IL97492A patent/IL97492A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IL97492A0 (en) | 1992-06-21 |
| JPH04217363A (ja) | 1992-08-07 |
| EP0445545A1 (de) | 1991-09-11 |
| US5049962A (en) | 1991-09-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |