IN143139B - - Google Patents

Info

Publication number: IN143139B
Authority: IN; India

Application number

IN636/CAL/1975A

Other languages

English (en)

Inventor

N Goldsmith

P Robinson

Original Assignee

Rca Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1974-05-28

Filing date

1975-03-31

Publication date

1977-10-08

1975-03-31 Application filed by Rca Corp filed Critical Rca Corp

1977-10-08 Publication of IN143139B publication Critical patent/IN143139B/en

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

IN636/CAL/1975A 1974-05-28 1975-03-31 IN143139B (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/473,766 US3945864A (en)	1974-05-28	1974-05-28	Method of growing thick expitaxial layers of silicon

Publications (1)

Publication Number	Publication Date
IN143139B true IN143139B (fr)	1977-10-08

Family

ID=23880890

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IN636/CAL/1975A IN143139B (fr)	1974-05-28	1975-03-31

Country Status (10)

Country	Link
US (1)	US3945864A (fr)
JP (1)	JPS512681A (fr)
BE (1)	BE829378A (fr)
DE (1)	DE2523067B2 (fr)
FR (1)	FR2272732B3 (fr)
GB (1)	GB1490665A (fr)
IN (1)	IN143139B (fr)
IT (1)	IT1037445B (fr)
NL (1)	NL7506225A (fr)
SE (1)	SE7506031L (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4950605A (fr) *	1972-09-22	1974-05-16
US4509162A (en) *	1980-10-28	1985-04-02	Quixote Corporation	High density recording medium
US4549926A (en) *	1982-01-12	1985-10-29	Rca Corporation	Method for growing monocrystalline silicon on a mask layer
IN157312B (fr) *	1982-01-12	1986-03-01	Rca Corp
US4482422A (en) *	1982-02-26	1984-11-13	Rca Corporation	Method for growing a low defect monocrystalline layer on a mask
US4497683A (en) *	1982-05-03	1985-02-05	At&T Bell Laboratories	Process for producing dielectrically isolated silicon devices
US4460416A (en) *	1982-12-15	1984-07-17	Burroughs Corporation	Method for fabricating in-situ doped polysilicon employing overdamped gradually increasing gas flow rates with constant flow rate ratio
US4578142A (en) *	1984-05-10	1986-03-25	Rca Corporation	Method for growing monocrystalline silicon through mask layer
US4592792A (en) *	1985-01-23	1986-06-03	Rca Corporation	Method for forming uniformly thick selective epitaxial silicon
US4698316A (en) *	1985-01-23	1987-10-06	Rca Corporation	Method of depositing uniformly thick selective epitaxial silicon
JPH0639357B2 (ja) *	1986-09-08	1994-05-25	新技術開発事業団	元素半導体単結晶薄膜の成長方法
US4874464A (en) *	1988-03-14	1989-10-17	Epsilon Limited Partnership	Process for epitaxial deposition of silicon
JPH05217921A (ja) *	1991-09-13	1993-08-27	Motorola Inc	材料膜のエピタキシアル成長を行うための温度制御された処理
EP0718873A3 (fr)	1994-12-21	1998-04-15	MEMC Electronic Materials, Inc.	Procédé de nettoyage de plaquettes de silicium hydrophobe
JP3444327B2 (ja) *	1996-03-04	2003-09-08	信越半導体株式会社	シリコン単結晶薄膜の製造方法
US6703290B2 (en)	1999-07-14	2004-03-09	Seh America, Inc.	Growth of epitaxial semiconductor material with improved crystallographic properties
US6190453B1 (en)	1999-07-14	2001-02-20	Seh America, Inc.	Growth of epitaxial semiconductor material with improved crystallographic properties
US6489241B1 (en)	1999-09-17	2002-12-03	Applied Materials, Inc.	Apparatus and method for surface finishing a silicon film
DE19960823B4 (de) *	1999-12-16	2007-04-12	Siltronic Ag	Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung
US6774040B2 (en) *	2002-09-12	2004-08-10	Applied Materials, Inc.	Apparatus and method for surface finishing a silicon film
JP4266122B2 (ja) *	2002-11-18	2009-05-20	コバレントマテリアル株式会社	半導体基板の製造方法
WO2021030235A2 (fr)	2019-08-09	2021-02-18	Leading Edge Equipment Technologies, Inc.	Tranche comportant des régions à faible concentration en oxygène
MX2022001458A (es)	2019-08-09	2022-06-08	Leading Edge Equipment Tech Inc	Produccion de una cinta u oblea con regiones de baja concentracion de oxigeno.
CN116525418B (zh) *	2023-06-09	2023-09-15	中电科先进材料技术创新有限公司	基于111晶向的硅外延片制备方法、硅外延片及半导体器件
CN119859846B (zh) *	2025-03-21	2025-06-24	中国电子科技集团公司第四十六研究所	一种半导体功率器件用超薄衬底沉积厚层硅外延片的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3243323A (en) *	1962-06-11	1966-03-29	Motorola Inc	Gas etching
US3512056A (en) *	1967-04-25	1970-05-12	Westinghouse Electric Corp	Double epitaxial layer high power,high speed transistor
US3501336A (en) *	1967-12-11	1970-03-17	Texas Instruments Inc	Method for etching single crystal silicon substrates and depositing silicon thereon
DE1900116C3 (de) *	1969-01-02	1978-10-19	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten

1974
- 1974-05-28 US US05/473,766 patent/US3945864A/en not_active Expired - Lifetime
1975
- 1975-03-31 IN IN636/CAL/1975A patent/IN143139B/en unknown
- 1975-04-18 IT IT22520/75A patent/IT1037445B/it active
- 1975-05-15 GB GB20617/75A patent/GB1490665A/en not_active Expired
- 1975-05-21 FR FR7515828A patent/FR2272732B3/fr not_active Expired
- 1975-05-22 BE BE156613A patent/BE829378A/fr unknown
- 1975-05-24 DE DE2523067A patent/DE2523067B2/de not_active Withdrawn
- 1975-05-26 JP JP50063387A patent/JPS512681A/ja active Granted
- 1975-05-27 NL NL7506225A patent/NL7506225A/xx not_active Application Discontinuation
- 1975-05-27 SE SE7506031A patent/SE7506031L/xx unknown

Also Published As

Publication number	Publication date
US3945864A (en)	1976-03-23
GB1490665A (en)	1977-11-02
DE2523067B2 (de)	1978-12-14
JPS512681A (en)	1976-01-10
IT1037445B (it)	1979-11-10
NL7506225A (nl)	1975-12-02
FR2272732B3 (fr)	1978-12-01
AU8142375A (en)	1976-11-25
FR2272732A1 (fr)	1975-12-26
BE829378A (fr)	1975-09-15
SE7506031L (sv)	1975-12-01
DE2523067A1 (de)	1975-12-18
JPS546036B2 (fr)	1979-03-23

Publication	Publication Date	Title
FR2272732B3 (fr)	1978-12-01
AU7462274A (fr)	1976-04-29
AU7459074A (fr)	1976-04-29
AU6599874A (fr)	1975-08-28
AU479523A (fr)	1975-07-10
AU479758A (fr)	1975-08-14
AU479765A (fr)	1975-11-13
AU479987A (fr)	1976-02-05
AU480069A (fr)	1976-05-06
AU480170A (fr)	1976-01-29
AU480399A (fr)	1975-07-31
AU480469A (fr)	1975-01-30
AU480659A (fr)	1977-02-08
AU480723A (fr)	1975-11-27
AU480762A (fr)	1976-01-29
AU481086A (fr)	1976-04-29
AU481360A (fr)	1976-01-22
AU481457A (fr)	1975-10-09
AU481880A (fr)	1976-01-08
AU482284A (fr)	1975-08-21
AU490706A (fr)	1978-02-13
AU479447A (fr)	1975-10-02
AU7504272A (fr)	1975-02-13
BE829576A (fr)	1975-11-28
BE830261A (fr)	1975-12-16