IN151120B - - Google Patents
Info
- Publication number
- IN151120B IN151120B IN872/CAL/79A IN872CA1979A IN151120B IN 151120 B IN151120 B IN 151120B IN 872CA1979 A IN872CA1979 A IN 872CA1979A IN 151120 B IN151120 B IN 151120B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/126—Power FETs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/942,580 US4206469A (en) | 1978-09-15 | 1978-09-15 | Power metal-oxide-semiconductor-field-effect-transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN151120B true IN151120B (pt) | 1983-02-26 |
Family
ID=25478305
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN872/CAL/79A IN151120B (pt) | 1978-09-15 | 1979-08-22 | |
| IN939/CAL/79A IN152227B (pt) | 1978-09-15 | 1979-09-07 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN939/CAL/79A IN152227B (pt) | 1978-09-15 | 1979-09-07 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4206469A (pt) |
| JP (1) | JPS5555570A (pt) |
| BE (1) | BE878753A (pt) |
| BR (1) | BR7905850A (pt) |
| CA (1) | CA1121516A (pt) |
| DE (1) | DE2937261A1 (pt) |
| FR (1) | FR2436504A1 (pt) |
| GB (1) | GB2031226A (pt) |
| IN (2) | IN151120B (pt) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
| EP0077337A1 (en) * | 1981-02-23 | 1983-04-27 | Motorola, Inc. | Mos power transistor |
| US4503598A (en) * | 1982-05-20 | 1985-03-12 | Fairchild Camera & Instrument Corporation | Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques |
| US4783694A (en) * | 1984-03-16 | 1988-11-08 | Motorola Inc. | Integrated bipolar-MOS semiconductor device with common collector and drain |
| US4866492A (en) * | 1986-02-28 | 1989-09-12 | Polyfet Rf Devices, Inc. | Low loss fet |
| JPH0758782B2 (ja) * | 1986-03-19 | 1995-06-21 | 株式会社東芝 | 半導体装置 |
| JPH0354868A (ja) * | 1989-07-21 | 1991-03-08 | Fuji Electric Co Ltd | Ｍｏｓ型半導体装置 |
| JP2799252B2 (ja) * | 1991-04-23 | 1998-09-17 | 三菱電機株式会社 | Ｍｏｓ型半導体装置およびその製造方法 |
| US5637922A (en) * | 1994-02-07 | 1997-06-10 | General Electric Company | Wireless radio frequency power semiconductor devices using high density interconnect |
| EP0772242B1 (en) | 1995-10-30 | 2006-04-05 | STMicroelectronics S.r.l. | Single feature size MOS technology power device |
| EP0772241B1 (en) | 1995-10-30 | 2004-06-09 | STMicroelectronics S.r.l. | High density MOS technology power device |
| EP0961325B1 (en) * | 1998-05-26 | 2008-05-07 | STMicroelectronics S.r.l. | High integration density MOS technology power device |
| JP2001015526A (ja) * | 1999-06-28 | 2001-01-19 | Nec Kansai Ltd | 電界効果トランジスタ |
| JP4845293B2 (ja) * | 2000-08-30 | 2011-12-28 | 新電元工業株式会社 | 電界効果トランジスタ |
| US9166009B2 (en) * | 2011-04-25 | 2015-10-20 | Renesas Electronics Corporation | Semiconductor apparatus and method for making semiconductor apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL152708B (nl) * | 1967-02-28 | 1977-03-15 | Philips Nv | Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode. |
| US3515405A (en) * | 1968-02-02 | 1970-06-02 | Westinghouse Electric Corp | Axle suspension system for transit vehicles |
| US3851379A (en) * | 1973-05-16 | 1974-12-03 | Westinghouse Electric Corp | Solid state components |
| US4055884A (en) * | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
| US4129879A (en) * | 1977-04-21 | 1978-12-12 | General Electric Company | Vertical field effect transistor |
| JPS545674A (en) * | 1977-06-15 | 1979-01-17 | Sony Corp | Semiconductor device |
-
1978
- 1978-09-15 US US05/942,580 patent/US4206469A/en not_active Expired - Lifetime
-
1979
- 1979-08-22 IN IN872/CAL/79A patent/IN151120B/en unknown
- 1979-09-07 IN IN939/CAL/79A patent/IN152227B/en unknown
- 1979-09-10 GB GB7931335A patent/GB2031226A/en not_active Withdrawn
- 1979-09-11 CA CA000335410A patent/CA1121516A/en not_active Expired
- 1979-09-12 BE BE0/197122A patent/BE878753A/fr unknown
- 1979-09-13 BR BR7905850A patent/BR7905850A/pt unknown
- 1979-09-14 DE DE19792937261 patent/DE2937261A1/de not_active Withdrawn
- 1979-09-14 FR FR7922988A patent/FR2436504A1/fr active Granted
- 1979-09-14 JP JP11747679A patent/JPS5555570A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2031226A (en) | 1980-04-16 |
| DE2937261A1 (de) | 1980-03-27 |
| BE878753A (fr) | 1980-03-12 |
| BR7905850A (pt) | 1980-05-27 |
| IN152227B (pt) | 1983-11-26 |
| FR2436504B1 (pt) | 1982-11-12 |
| CA1121516A (en) | 1982-04-06 |
| FR2436504A1 (fr) | 1980-04-11 |
| US4206469A (en) | 1980-06-03 |
| JPS5555570A (en) | 1980-04-23 |