BR7905850A - Transistor de efeito de caomp semicondutor a oxido metalico - Google Patents

Transistor de efeito de caomp semicondutor a oxido metalico

Info

Publication number: BR7905850A
Authority: BR; Brazil
Prior art keywords: caomp; metal oxide; effect transistor; semiconductor effect; semiconductor
Prior art date: 1978-09-15

Application number

BR7905850A

Other languages

English (en)

Inventor

E Schlegel

M Hanes

Original Assignee

Westinghouse Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-09-15

Filing date

1979-09-13

Publication date

1980-05-27

1979-09-13 Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp

1980-05-27 Publication of BR7905850A publication Critical patent/BR7905850A/pt

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/126—Power FETs

BR7905850A 1978-09-15 1979-09-13 Transistor de efeito de caomp semicondutor a oxido metalico BR7905850A (pt)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/942,580 US4206469A (en)	1978-09-15	1978-09-15	Power metal-oxide-semiconductor-field-effect-transistor

Publications (1)

Publication Number	Publication Date
BR7905850A true BR7905850A (pt)	1980-05-27

Family

ID=25478305

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BR7905850A BR7905850A (pt)	1978-09-15	1979-09-13	Transistor de efeito de caomp semicondutor a oxido metalico

Country Status (9)

Country	Link
US (1)	US4206469A (pt)
JP (1)	JPS5555570A (pt)
BE (1)	BE878753A (pt)
BR (1)	BR7905850A (pt)
CA (1)	CA1121516A (pt)
DE (1)	DE2937261A1 (pt)
FR (1)	FR2436504A1 (pt)
GB (1)	GB2031226A (pt)
IN (2)	IN151120B (pt)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5553462A (en) *	1978-10-13	1980-04-18	Int Rectifier Corp	Mosfet element
US5130767C1 (en) *	1979-05-14	2001-08-14	Int Rectifier Corp	Plural polygon source pattern for mosfet
EP0077337A1 (en) *	1981-02-23	1983-04-27	Motorola, Inc.	Mos power transistor
US4503598A (en) *	1982-05-20	1985-03-12	Fairchild Camera & Instrument Corporation	Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques
US4783694A (en) *	1984-03-16	1988-11-08	Motorola Inc.	Integrated bipolar-MOS semiconductor device with common collector and drain
US4866492A (en) *	1986-02-28	1989-09-12	Polyfet Rf Devices, Inc.	Low loss fet
JPH0758782B2 (ja) *	1986-03-19	1995-06-21	株式会社東芝	半導体装置
JPH0354868A (ja) *	1989-07-21	1991-03-08	Fuji Electric Co Ltd	Ｍｏｓ型半導体装置
JP2799252B2 (ja) *	1991-04-23	1998-09-17	三菱電機株式会社	Ｍｏｓ型半導体装置およびその製造方法
US5637922A (en) *	1994-02-07	1997-06-10	General Electric Company	Wireless radio frequency power semiconductor devices using high density interconnect
EP0772242B1 (en)	1995-10-30	2006-04-05	STMicroelectronics S.r.l.	Single feature size MOS technology power device
EP0772241B1 (en)	1995-10-30	2004-06-09	STMicroelectronics S.r.l.	High density MOS technology power device
EP0961325B1 (en) *	1998-05-26	2008-05-07	STMicroelectronics S.r.l.	High integration density MOS technology power device
JP2001015526A (ja) *	1999-06-28	2001-01-19	Nec Kansai Ltd	電界効果トランジスタ
JP4845293B2 (ja) *	2000-08-30	2011-12-28	新電元工業株式会社	電界効果トランジスタ
US9166009B2 (en) *	2011-04-25	2015-10-20	Renesas Electronics Corporation	Semiconductor apparatus and method for making semiconductor apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL152708B (nl) *	1967-02-28	1977-03-15	Philips Nv	Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode.
US3515405A (en) *	1968-02-02	1970-06-02	Westinghouse Electric Corp	Axle suspension system for transit vehicles
US3851379A (en) *	1973-05-16	1974-12-03	Westinghouse Electric Corp	Solid state components
US4055884A (en) *	1976-12-13	1977-11-01	International Business Machines Corporation	Fabrication of power field effect transistors and the resulting structures
US4129879A (en) *	1977-04-21	1978-12-12	General Electric Company	Vertical field effect transistor
JPS545674A (en) *	1977-06-15	1979-01-17	Sony Corp	Semiconductor device

1978
- 1978-09-15 US US05/942,580 patent/US4206469A/en not_active Expired - Lifetime
1979
- 1979-08-22 IN IN872/CAL/79A patent/IN151120B/en unknown
- 1979-09-07 IN IN939/CAL/79A patent/IN152227B/en unknown
- 1979-09-10 GB GB7931335A patent/GB2031226A/en not_active Withdrawn
- 1979-09-11 CA CA000335410A patent/CA1121516A/en not_active Expired
- 1979-09-12 BE BE0/197122A patent/BE878753A/fr unknown
- 1979-09-13 BR BR7905850A patent/BR7905850A/pt unknown
- 1979-09-14 DE DE19792937261 patent/DE2937261A1/de not_active Withdrawn
- 1979-09-14 FR FR7922988A patent/FR2436504A1/fr active Granted
- 1979-09-14 JP JP11747679A patent/JPS5555570A/ja active Pending

Also Published As

Publication number	Publication date
GB2031226A (en)	1980-04-16
DE2937261A1 (de)	1980-03-27
BE878753A (fr)	1980-03-12
IN152227B (pt)	1983-11-26
FR2436504B1 (pt)	1982-11-12
CA1121516A (en)	1982-04-06
FR2436504A1 (fr)	1980-04-11
IN151120B (pt)	1983-02-26
US4206469A (en)	1980-06-03
JPS5555570A (en)	1980-04-23

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