IN2014CN04111A - - Google Patents
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- Publication number
- IN2014CN04111A IN2014CN04111A IN4111CHN2014A IN2014CN04111A IN 2014CN04111 A IN2014CN04111 A IN 2014CN04111A IN 4111CHN2014 A IN4111CHN2014 A IN 4111CHN2014A IN 2014CN04111 A IN2014CN04111 A IN 2014CN04111A
- Authority
- IN
- India
- Prior art keywords
- coupled
- power amplifier
- amplifier
- wave
- amplifier stages
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/486—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with IC amplifier blocks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
- H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/135—Indexing scheme relating to amplifiers there being a feedback over one or more internal stages in the global amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/405—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/327,479 US8729962B2 (en) | 2011-12-15 | 2011-12-15 | Millimeter wave power amplifier |
| PCT/US2012/069944 WO2013090847A1 (en) | 2011-12-15 | 2012-12-14 | Millimeter wave power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014CN04111A true IN2014CN04111A (de) | 2015-07-10 |
Family
ID=47604077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN4111CHN2014 IN2014CN04111A (de) | 2011-12-15 | 2012-12-14 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8729962B2 (de) |
| EP (1) | EP2792067B1 (de) |
| JP (1) | JP6109849B2 (de) |
| KR (1) | KR101577587B1 (de) |
| CN (1) | CN103999359B (de) |
| IN (1) | IN2014CN04111A (de) |
| WO (1) | WO2013090847A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10291183B1 (en) | 2018-02-28 | 2019-05-14 | Globalfoundries Inc. | Method and apparatus for using back gate biasing for power amplifiers for millimeter wave devices |
| CN110995290A (zh) * | 2018-09-29 | 2020-04-10 | 天津大学青岛海洋技术研究院 | 一种支持uwb和fmcw双模的宽带射频收发机架构 |
| EP3930185A1 (de) | 2020-06-26 | 2021-12-29 | NXP USA, Inc. | Verstärkerschaltung mit einem ausgangsbegrenzer |
| EP3930184A1 (de) | 2020-06-26 | 2021-12-29 | NXP USA, Inc. | Verstärkerschaltung mit temperaturkompensation |
| CN113949352A (zh) * | 2021-10-13 | 2022-01-18 | 四川益丰电子科技有限公司 | 一种24-29ghz的高性能低噪声放大器 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3715678A (en) * | 1971-07-27 | 1973-02-06 | Princeton Applied Res Corp | Active electrical filter |
| US3972002A (en) | 1974-12-30 | 1976-07-27 | Bell Telephone Laboratories, Incorporated | Dual feedback amplifier |
| US5166639A (en) * | 1991-10-29 | 1992-11-24 | Sgs-Thomson Microelectronics, Inc. | High gain mololithic microwave integrated circuit amplifier |
| JPH06150653A (ja) * | 1992-10-30 | 1994-05-31 | Fujitsu Ltd | レベルシフト増幅回路 |
| US5469114A (en) | 1994-10-03 | 1995-11-21 | Advanced Milliwave Laboratories, Inc. | Loss less RF feedback for power amplifier linearization |
| WO1997013320A1 (en) | 1995-09-29 | 1997-04-10 | Matsushita Electric Industrial Co., Ltd. | Power amplifier and communication device |
| US6150884A (en) | 1998-05-13 | 2000-11-21 | Texas Instruments Incorporated | Multistage amplifier circuit with improved nested transconductance capacitance compensation |
| GB2354125A (en) | 1999-09-09 | 2001-03-14 | Ericsson Telefon Ab L M | A TDMA transmitter with feedback power control loop offset compensation |
| US7061313B2 (en) | 2000-05-05 | 2006-06-13 | Telefonaktiebolaget Lm Ericsson (Publ) | Dual feedback linear amplifier |
| US6633751B1 (en) | 2000-09-21 | 2003-10-14 | Skyworks Solutions, Inc. | System for a dual feedback translation loop for power amplifier feedback control |
| US7276965B1 (en) * | 2001-03-13 | 2007-10-02 | Marvell International Ltd. | Nested transimpedance amplifier |
| JP3880329B2 (ja) | 2001-04-20 | 2007-02-14 | 株式会社日立国際電気 | ループゲイン制御方法及び電力増幅回路 |
| US7212070B2 (en) | 2003-12-22 | 2007-05-01 | Silicon Laboratories Inc. | Circuit and method of reducing noise in an RF power amplifier |
| JP4775686B2 (ja) * | 2004-02-24 | 2011-09-21 | 日立金属株式会社 | 積層ローパスフィルタ及びそれを用いた高周波スイッチモジュール |
| US7023271B1 (en) * | 2004-03-31 | 2006-04-04 | Marvell International Ltd. | Variable-gain constant-bandwidth transimpedance amplifier |
| US7385447B1 (en) | 2004-06-28 | 2008-06-10 | Anadigics, Inc. | Power amplifier having curve-fitting predistorter |
| ATE508531T1 (de) | 2004-12-01 | 2011-05-15 | Alcatel Lucent | Leistungsverstärker |
| US7183842B1 (en) | 2005-05-26 | 2007-02-27 | Yu Hei Sunny Wai | Optimum composite cascode amplifier |
| US7423483B1 (en) | 2005-06-20 | 2008-09-09 | Marvell International Ltd. | Increasing amplifier bandwidth by positive capacitive feedback |
| JP2007036420A (ja) * | 2005-07-25 | 2007-02-08 | D & M Holdings Inc | 増幅装置 |
| WO2007016967A1 (en) | 2005-08-05 | 2007-02-15 | Freescale Semiconductor, Inc. | Loop gain equalizer for rf power amplifier |
| TWI306690B (en) | 2006-01-27 | 2009-02-21 | Univ Nat Chiao Tung | Ultra broad-band low noise amplifier utilizing dual feedback technique |
| US7508264B1 (en) | 2006-04-14 | 2009-03-24 | Atheros Communications, Inc. | DC-couples RF multi-stage amplifier |
| JP4485487B2 (ja) * | 2006-05-11 | 2010-06-23 | シャープ株式会社 | 電力増幅器 |
| US7764124B2 (en) | 2006-09-26 | 2010-07-27 | Project Ft, Inc. | Broadband low noise amplifier |
| US7486144B2 (en) | 2007-03-07 | 2009-02-03 | Motorola, Inc. | RF power amplifier protection |
| JP2009290411A (ja) * | 2008-05-28 | 2009-12-10 | Nec Electronics Corp | 低雑音受信装置 |
| ATE506746T1 (de) | 2008-09-09 | 2011-05-15 | Alcatel Lucent | Stromverstärkerlinearisierung unter verwendung von hochfrequenz-feedback |
| DE102008050743B4 (de) * | 2008-10-08 | 2016-11-17 | Qualcomm Technologies, Inc. (N.D.Ges.D. Staates Delaware) | Impedanzanpass-Schaltung zur Anpassung von Planarantennen |
| KR101079015B1 (ko) * | 2009-11-18 | 2011-11-01 | 순천향대학교 산학협력단 | 합성 우좌향 전송선로를 이용한 이중대역 고주파 증폭기 |
| EP2522072B1 (de) | 2010-01-04 | 2020-07-29 | Marvell Asia Pte, Ltd. | Stromverstärker mit feedback-impedanz für stabile leistung |
-
2011
- 2011-12-15 US US13/327,479 patent/US8729962B2/en active Active
-
2012
- 2012-12-14 KR KR1020147019328A patent/KR101577587B1/ko active Active
- 2012-12-14 WO PCT/US2012/069944 patent/WO2013090847A1/en not_active Ceased
- 2012-12-14 IN IN4111CHN2014 patent/IN2014CN04111A/en unknown
- 2012-12-14 JP JP2014547532A patent/JP6109849B2/ja not_active Expired - Fee Related
- 2012-12-14 CN CN201280061771.0A patent/CN103999359B/zh active Active
- 2012-12-14 EP EP12818707.7A patent/EP2792067B1/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015505203A (ja) | 2015-02-16 |
| US8729962B2 (en) | 2014-05-20 |
| JP6109849B2 (ja) | 2017-04-05 |
| CN103999359A (zh) | 2014-08-20 |
| EP2792067A1 (de) | 2014-10-22 |
| WO2013090847A1 (en) | 2013-06-20 |
| KR101577587B1 (ko) | 2015-12-15 |
| EP2792067B1 (de) | 2020-04-29 |
| US20130154747A1 (en) | 2013-06-20 |
| CN103999359B (zh) | 2016-05-11 |
| KR20140102297A (ko) | 2014-08-21 |
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