IN2014CN04171A - - Google Patents

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Publication number
IN2014CN04171A
IN2014CN04171A IN4171CHN2014A IN2014CN04171A IN 2014CN04171 A IN2014CN04171 A IN 2014CN04171A IN 4171CHN2014 A IN4171CHN2014 A IN 4171CHN2014A IN 2014CN04171 A IN2014CN04171 A IN 2014CN04171A
Authority
IN
India
Prior art keywords
access
group
memory blocks
ports
port
Prior art date
Application number
Other languages
English (en)
Inventor
Ephrem C Wu
Gyanesh Saharia
Original Assignee
Xilinx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xilinx Inc filed Critical Xilinx Inc
Publication of IN2014CN04171A publication Critical patent/IN2014CN04171A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Static Random-Access Memory (AREA)
  • Data Exchanges In Wide-Area Networks (AREA)
  • Information Transfer Systems (AREA)
  • Dram (AREA)
IN4171CHN2014 2011-12-07 2012-09-28 IN2014CN04171A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/314,079 US8611175B2 (en) 2011-12-07 2011-12-07 Contention-free memory arrangement
PCT/US2012/058039 WO2013085606A2 (fr) 2011-12-07 2012-09-28 Dispositif de mémoire sans contention

Publications (1)

Publication Number Publication Date
IN2014CN04171A true IN2014CN04171A (fr) 2015-07-17

Family

ID=47172872

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4171CHN2014 IN2014CN04171A (fr) 2011-12-07 2012-09-28

Country Status (7)

Country Link
US (1) US8611175B2 (fr)
EP (1) EP2788983B1 (fr)
JP (1) JP5947397B2 (fr)
KR (1) KR101816970B1 (fr)
CN (1) CN104106115B (fr)
IN (1) IN2014CN04171A (fr)
WO (1) WO2013085606A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8947931B1 (en) * 2014-06-13 2015-02-03 Sandisk Technologies Inc. Memory module
US9864710B2 (en) * 2015-03-30 2018-01-09 EMC IP Holding Company LLC Writing data to storage via a PCI express fabric having a fully-connected mesh topology
JP2018032141A (ja) * 2016-08-23 2018-03-01 東芝メモリ株式会社 半導体装置
US10141938B2 (en) * 2016-09-21 2018-11-27 Xilinx, Inc. Stacked columnar integrated circuits
US10635331B2 (en) 2017-07-05 2020-04-28 Western Digital Technologies, Inc. Distribution of logical-to-physical address entries across bank groups
US10346093B1 (en) * 2018-03-16 2019-07-09 Xilinx, Inc. Memory arrangement for tensor data
KR20210065195A (ko) * 2018-10-23 2021-06-03 에트론 테크놀로지 아메리카 아이엔씨. 버스 및 시스템 내부에서 사용하기 위한 슈퍼스칼라 메모리 ic
JP7563082B2 (ja) * 2020-09-29 2024-10-08 富士フイルムビジネスイノベーション株式会社 プログラマブル論理回路、情報処理装置、情報処理システム、及びプログラム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145172A (ja) * 1985-12-20 1987-06-29 Fujitsu Ltd 試験回路付入出力パツフア
JP2546901B2 (ja) * 1989-12-05 1996-10-23 株式会社日立製作所 通信制御装置
JPH0668022A (ja) * 1992-08-18 1994-03-11 Oki Electric Ind Co Ltd ダイレクトメモリアクセス装置
GB9618137D0 (en) * 1996-08-30 1996-10-09 Sgs Thomson Microelectronics Improvements in or relating to an ATM switch
JP2000209172A (ja) * 1999-01-14 2000-07-28 Matsushita Electric Ind Co Ltd 多重化装置及び多重化システム
KR100546331B1 (ko) * 2003-06-03 2006-01-26 삼성전자주식회사 스택 뱅크들 마다 독립적으로 동작하는 멀티 포트 메모리장치
DE102004038211A1 (de) * 2004-08-05 2006-03-16 Robert Bosch Gmbh Botschaftsverwalter und Verfahren zur Steuerung des Zugriffs auf Daten eines Botschaftsspeichers eines Kommunikationsbausteins
KR100655081B1 (ko) 2005-12-22 2006-12-08 삼성전자주식회사 가변적 액세스 경로를 가지는 멀티 포트 반도체 메모리장치 및 그에 따른 방법
US8861300B2 (en) 2009-06-30 2014-10-14 Infinera Corporation Non-blocking multi-port memory formed from smaller multi-port memories
US8547774B2 (en) * 2010-01-29 2013-10-01 Mosys, Inc. Hierarchical multi-bank multi-port memory organization

Also Published As

Publication number Publication date
JP2015506025A (ja) 2015-02-26
KR20140102718A (ko) 2014-08-22
CN104106115B (zh) 2017-03-22
US8611175B2 (en) 2013-12-17
JP5947397B2 (ja) 2016-07-06
CN104106115A (zh) 2014-10-15
WO2013085606A3 (fr) 2014-08-14
EP2788983B1 (fr) 2016-04-06
KR101816970B1 (ko) 2018-01-09
US20130148450A1 (en) 2013-06-13
EP2788983A2 (fr) 2014-10-15
WO2013085606A2 (fr) 2013-06-13

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