IN2014DN08650A - - Google Patents

Info

Publication number
IN2014DN08650A
IN2014DN08650A IN8650DEN2014A IN2014DN08650A IN 2014DN08650 A IN2014DN08650 A IN 2014DN08650A IN 8650DEN2014 A IN8650DEN2014 A IN 8650DEN2014A IN 2014DN08650 A IN2014DN08650 A IN 2014DN08650A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Hironobu Murata
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of IN2014DN08650A publication Critical patent/IN2014DN08650A/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80—Camera processing pipelines; Components thereof
    • H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
    • H04N23/843—Demosaicing, e.g. interpolating colour pixel values
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Automatic Focus Adjustment (AREA)
  • Color Television Image Signal Generators (AREA)
  • Studio Devices (AREA)
  • Focusing (AREA)
  • Optical Filters (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IN8650DEN2014 2012-03-30 2014-10-15 IN2014DN08650A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012081167 2012-03-30
PCT/JP2013/059622 WO2013147199A1 (ja) 2012-03-30 2013-03-29 撮像素子、撮影方法、および撮像装置

Publications (1)

Publication Number Publication Date
IN2014DN08650A true IN2014DN08650A (de) 2015-05-22

Family

ID=49260440

Family Applications (1)

Application Number Title Priority Date Filing Date
IN8650DEN2014 IN2014DN08650A (de) 2012-03-30 2014-10-15

Country Status (6)

Country Link
US (6) US20150062391A1 (de)
EP (1) EP2833623B1 (de)
JP (4) JP6384323B2 (de)
CN (3) CN109246400B (de)
IN (1) IN2014DN08650A (de)
WO (1) WO2013147199A1 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2833623B1 (de) 2012-03-30 2019-09-18 Nikon Corporation Bildsensor, bildgebungsverfahren und bildgebungsvorrichtung
JP2014049727A (ja) * 2012-09-04 2014-03-17 Canon Inc 固体撮像装置
US9276031B2 (en) 2013-03-04 2016-03-01 Apple Inc. Photodiode with different electric potential regions for image sensors
US9741754B2 (en) 2013-03-06 2017-08-22 Apple Inc. Charge transfer circuit with storage nodes in image sensors
US10285626B1 (en) 2014-02-14 2019-05-14 Apple Inc. Activity identification using an optical heart rate monitor
JP6435612B2 (ja) * 2014-02-26 2018-12-12 株式会社ニコン 撮像素子および撮像装置
TWI500008B (zh) * 2014-04-07 2015-09-11 E Ink Holdings Inc 畫素陣列
JP6368125B2 (ja) * 2014-04-09 2018-08-01 キヤノン株式会社 撮像装置
JP2015207815A (ja) * 2014-04-17 2015-11-19 キヤノン株式会社 撮像素子および撮像素子を備えた撮像装置
US9686485B2 (en) 2014-05-30 2017-06-20 Apple Inc. Pixel binning in an image sensor
JP2015230355A (ja) * 2014-06-04 2015-12-21 リコーイメージング株式会社 撮像装置および撮像素子
JP6507527B2 (ja) * 2014-08-29 2019-05-08 株式会社ニコン 撮像素子および撮像装置
JP6369233B2 (ja) * 2014-09-01 2018-08-08 ソニー株式会社 固体撮像素子及びその信号処理方法、並びに電子機器
JP2016082133A (ja) * 2014-10-20 2016-05-16 ソニー株式会社 固体撮像素子及び電子機器
CN104536193B (zh) * 2014-12-31 2019-01-01 深圳市华星光电技术有限公司 像素结构及显示装置
JP6536126B2 (ja) * 2015-03-31 2019-07-03 株式会社ニコン 撮像素子および撮像装置
TWI551846B (zh) * 2015-04-22 2016-10-01 原相科技股份有限公司 感測元件及光學測距系統
US10044959B2 (en) * 2015-09-24 2018-08-07 Qualcomm Incorporated Mask-less phase detection autofocus
JP6746301B2 (ja) 2015-11-30 2020-08-26 キヤノン株式会社 撮像装置の駆動方法、撮像装置、撮像システム
JP6891470B2 (ja) * 2015-12-04 2021-06-18 株式会社ニコン 撮像装置
JP6791243B2 (ja) * 2016-03-31 2020-11-25 株式会社ニコン 撮像素子、及び、撮像装置
JP7005125B2 (ja) * 2016-04-22 2022-01-21 キヤノン株式会社 撮像素子、撮像システム、および撮像素子の製造方法
US9883128B2 (en) 2016-05-20 2018-01-30 Semiconductor Components Industries, Llc Imaging systems with high dynamic range and phase detection pixels
CN111682039B (zh) 2016-09-23 2021-08-03 苹果公司 堆叠式背面照明spad阵列
US10656251B1 (en) 2017-01-25 2020-05-19 Apple Inc. Signal acquisition in a SPAD detector
JP6799690B2 (ja) 2017-01-25 2020-12-16 アップル インコーポレイテッドＡｐｐｌｅ Ｉｎｃ． 変調感度を有するｓｐａｄ検出器
US10962628B1 (en) 2017-01-26 2021-03-30 Apple Inc. Spatial temporal weighting in a SPAD detector
WO2018168551A1 (ja) 2017-03-16 2018-09-20 富士フイルム株式会社 撮像素子及び撮像装置
US20180288306A1 (en) * 2017-03-30 2018-10-04 Qualcomm Incorporated Mask-less phase detection autofocus
KR102375887B1 (ko) * 2017-06-13 2022-03-18 삼성전자주식회사 반도체 장치 및 이미지 센서
US10622538B2 (en) 2017-07-18 2020-04-14 Apple Inc. Techniques for providing a haptic output and sensing a haptic input using a piezoelectric body
JP6592483B2 (ja) * 2017-08-04 2019-10-16 シャープ株式会社 電磁波透過フィルタ及び電磁波検出装置
US10440301B2 (en) * 2017-09-08 2019-10-08 Apple Inc. Image capture device, pixel, and method providing improved phase detection auto-focus performance
CN107980219B (zh) * 2017-10-20 2021-08-20 深圳市汇顶科技股份有限公司 像素传感模块及图像撷取装置
US11019294B2 (en) 2018-07-18 2021-05-25 Apple Inc. Seamless readout mode transitions in image sensors
US10848693B2 (en) 2018-07-18 2020-11-24 Apple Inc. Image flare detection using asymmetric pixels
KR102624107B1 (ko) 2018-12-06 2024-01-12 삼성전자주식회사 복수의 서브 픽셀들을 덮는 마이크로 렌즈를 통해 발생된 광의 경로 차에 의해 깊이 데이터를 생성하는 이미지 센서 및 그 이미지 센서를 포함하는 전자 장치
KR102632474B1 (ko) * 2019-02-11 2024-02-01 삼성전자주식회사 이미지 센서의 픽셀 어레이 및 이를 포함하는 이미지 센서
US11343435B2 (en) 2019-12-26 2022-05-24 Waymo Llc Microlensing for real-time sensing of stray light
KR102905974B1 (ko) 2020-01-23 2025-12-29 삼성전자 주식회사 복수의 공유 픽셀들을 포함하는 이미지 장치 및 이의 동작 방법
EP4117282A4 (de) * 2020-03-06 2023-04-05 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Bildsensor, bildgebungsvorrichtung, elektronische vorrichtung, bildverarbeitungssystem und signalverarbeitungsverfahren
JP7504646B2 (ja) * 2020-04-07 2024-06-24 キヤノン株式会社 撮像素子およびその制御方法、撮像装置
US11284045B2 (en) * 2020-04-22 2022-03-22 OmniVision Technologies. Inc. Image sensor with shifted color filter array pattern and bit line pairs
WO2021246311A1 (ja) * 2020-06-05 2021-12-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
US11563910B2 (en) 2020-08-04 2023-01-24 Apple Inc. Image capture devices having phase detection auto-focus pixels
KR20220033357A (ko) * 2020-09-09 2022-03-16 삼성전자주식회사 이미지 센서 및 이미지 센서의 동작 방법
US11546532B1 (en) 2021-03-16 2023-01-03 Apple Inc. Dynamic correlated double sampling for noise rejection in image sensors
US12192644B2 (en) 2021-07-29 2025-01-07 Apple Inc. Pulse-width modulation pixel sensor
US12069384B2 (en) 2021-09-23 2024-08-20 Apple Inc. Image capture devices having phase detection auto-focus pixels
JP2023176918A (ja) * 2022-06-01 2023-12-13 キヤノン株式会社 撮像装置および機器
JP2024044744A (ja) * 2022-09-21 2024-04-02 キヤノン株式会社 撮像装置、撮像システム、移動体および機器
US20240298097A1 (en) * 2023-03-02 2024-09-05 Meta Platforms Technologies, Llc Pixel sensor using a dual pixel array
US12294796B2 (en) * 2023-04-03 2025-05-06 Omnivision Technologies, Inc. Phase detection auto focus with horizontal/vertical quad phase detection

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3977062B2 (ja) 2001-11-21 2007-09-19 キヤノン株式会社 撮像装置及び焦点調節方法
JP4349232B2 (ja) * 2004-07-30 2009-10-21 ソニー株式会社 半導体モジュール及びｍｏｓ型固体撮像装置
US7545422B2 (en) * 2004-10-27 2009-06-09 Aptina Imaging Corporation Imaging system
KR100665177B1 (ko) 2005-05-25 2007-01-09 삼성전기주식회사 반도체 감광 디바이스용 이미지 센서 및 이를 이용한이미지 처리 장치
CN101228631A (zh) * 2005-06-02 2008-07-23 索尼株式会社 半导体图像传感器模块及其制造方法
TW201101476A (en) * 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
US7522341B2 (en) * 2005-07-12 2009-04-21 Micron Technology, Inc. Sharing of microlenses among pixels in image sensors
JP4915126B2 (ja) * 2006-04-10 2012-04-11 株式会社ニコン 固体撮像装置、および電子カメラ
JP4935162B2 (ja) 2006-04-11 2012-05-23 株式会社ニコン 撮像装置、カメラおよび画像処理方法
US7711261B2 (en) 2006-04-11 2010-05-04 Nikon Corporation Imaging device, camera and image processing method
JP4952060B2 (ja) * 2006-05-26 2012-06-13 株式会社ニコン 撮像装置
JP2008153370A (ja) * 2006-12-15 2008-07-03 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
WO2009020031A1 (en) * 2007-08-06 2009-02-12 Canon Kabushiki Kaisha Image sensing apparatus
EP2179581B1 (de) * 2007-08-10 2015-11-11 Canon Kabushiki Kaisha Bildaufnahmevorrichtung und steuerverfahren dafür
JP5002412B2 (ja) * 2007-10-24 2012-08-15 キヤノン株式会社 撮像装置
JP5451111B2 (ja) * 2008-03-11 2014-03-26 キヤノン株式会社 焦点検出装置およびそれを有する撮像装置
KR101458052B1 (ko) * 2008-06-12 2014-11-06 삼성전자주식회사 혼색 방지 구조를 갖는 시모스 이미지 센서 및 그 제조방법
TWI445166B (zh) * 2008-11-07 2014-07-11 Sony Corp 固態成像裝置，製造固態成像裝置之方法、及電子設備
JP5075795B2 (ja) * 2008-11-14 2012-11-21 株式会社東芝 固体撮像装置
KR101342968B1 (ko) * 2008-11-27 2013-12-19 캐논 가부시끼가이샤 고체촬상소자 및 촬상장치
JP5257176B2 (ja) * 2009-03-18 2013-08-07 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
TWI425629B (zh) * 2009-03-30 2014-02-01 Sony Corp 固態影像拾取裝置及其製造方法，影像拾取裝置及電子裝置
JP5359465B2 (ja) 2009-03-31 2013-12-04 ソニー株式会社 固体撮像装置、固体撮像装置の信号処理方法および撮像装置
US8350940B2 (en) * 2009-06-08 2013-01-08 Aptina Imaging Corporation Image sensors and color filter arrays for charge summing and interlaced readout modes
JP5471117B2 (ja) * 2009-07-24 2014-04-16 ソニー株式会社 固体撮像装置とその製造方法並びにカメラ
JP5232118B2 (ja) * 2009-09-30 2013-07-10 富士フイルム株式会社 撮像デバイスおよび電子カメラ
JP4759082B2 (ja) * 2009-11-18 2011-08-31 富士フイルム株式会社 複眼式撮像装置
TWI515885B (zh) 2009-12-25 2016-01-01 新力股份有限公司 半導體元件及其製造方法，及電子裝置
JP5434761B2 (ja) * 2010-04-08 2014-03-05 株式会社ニコン 撮像デバイスおよび撮像装置
JP5644177B2 (ja) * 2010-05-07 2014-12-24 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP2012003080A (ja) * 2010-06-17 2012-01-05 Olympus Corp 撮像装置
JP2013201466A (ja) * 2010-06-30 2013-10-03 Fujifilm Corp 立体画像撮像装置
JP2012043939A (ja) * 2010-08-18 2012-03-01 Sony Corp 撮像素子および撮像装置
JP5500007B2 (ja) * 2010-09-03 2014-05-21 ソニー株式会社 固体撮像素子およびカメラシステム
JP5513326B2 (ja) * 2010-09-07 2014-06-04 キヤノン株式会社 撮像素子及び撮像装置
CN103155542A (zh) 2010-09-24 2013-06-12 富士胶片株式会社 图像拾取装置和图像拾取设备
JP6092784B2 (ja) * 2010-12-07 2017-03-15 ダウ グローバル テクノロジーズ エルエルシー アニオン性界面活性剤溶液からの無機物の低減方法
JP5856376B2 (ja) * 2011-01-27 2016-02-09 キヤノン株式会社 撮像装置及びその制御方法
JP2012204403A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 固体撮像装置及びその製造方法
EP2833623B1 (de) 2012-03-30 2019-09-18 Nikon Corporation Bildsensor, bildgebungsverfahren und bildgebungsvorrichtung
CN111711746A (zh) * 2012-03-30 2020-09-25 株式会社尼康 摄像装置以及摄像元件
JP2018149753A (ja) * 2017-03-14 2018-09-27 東レ株式会社 遠赤外線反射基板
JP7387140B2 (ja) * 2019-08-22 2023-11-28 コスモテック株式会社 電磁波シールドルーム及び電磁波シールドルームの組み立て方法

Also Published As

Publication number Publication date
CN104221365A (zh) 2014-12-17
JP2021093767A (ja) 2021-06-17
EP2833623B1 (de) 2019-09-18
WO2013147199A1 (ja) 2013-10-03
US20180109768A1 (en) 2018-04-19
US10560669B2 (en) 2020-02-11
JP7835705B2 (ja) 2026-03-25
US20200137361A1 (en) 2020-04-30
EP2833623A4 (de) 2015-10-14
US20230362507A1 (en) 2023-11-09
JP2018196143A (ja) 2018-12-06
CN109509761A (zh) 2019-03-22
US20190174103A1 (en) 2019-06-06
JPWO2013147199A1 (ja) 2015-12-14
JP2023120273A (ja) 2023-08-29
JP6384323B2 (ja) 2018-09-05
JP7298635B2 (ja) 2023-06-27
CN109246400B (zh) 2021-02-19
US12294795B2 (en) 2025-05-06
US20250234107A1 (en) 2025-07-17
US10341620B2 (en) 2019-07-02
US20150062391A1 (en) 2015-03-05
EP2833623A1 (de) 2015-02-04
CN104221365B (zh) 2018-11-06
JP6848941B2 (ja) 2021-03-24
CN109246400A (zh) 2019-01-18

Similar Documents

Publication Publication Date Title
IN2014DN08650A (de)
BR112015005432A2 (de)
BR112014023379A2 (de)
BR112014017635A2 (de)
BR112014018854A2 (de)
BR112014017625A2 (de)
BR112014017659A2 (de)
BR112014017592A2 (de)
BR112014017607A2 (de)
BR112014017646A2 (de)
BR112014017638A2 (de)
BR112013027865A2 (de)
BR112014017644A2 (de)
BR112014018747A2 (de)
BR112014017634A2 (de)
BR112014017588A2 (de)
BR112014017647A2 (de)
BR112014013184A8 (de)
BR112014017627A2 (de)
BR112014017623A2 (de)
BR112014017652A2 (de)
BR112014017630A2 (de)
BR112014023107A2 (de)
BR112014017621A2 (de)
BR112014018788A2 (de)