IN2015DN00029A - - Google Patents

Info

Publication number
IN2015DN00029A
IN2015DN00029A IN29DEN2015A IN2015DN00029A IN 2015DN00029 A IN2015DN00029 A IN 2015DN00029A IN 29DEN2015 A IN29DEN2015 A IN 29DEN2015A IN 2015DN00029 A IN2015DN00029 A IN 2015DN00029A
Authority
IN
India
Prior art keywords
layer
emitter
regions
conductivity type
passivating
Prior art date
Application number
Other languages
English (en)
Inventor
Christophe Ballif
Jonas Geissbühler
Original Assignee
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytech filed Critical Ecole Polytech
Publication of IN2015DN00029A publication Critical patent/IN2015DN00029A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
IN29DEN2015 2012-06-29 2012-06-29 IN2015DN00029A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/062776 WO2014000826A1 (fr) 2012-06-29 2012-06-29 Cellule solaire

Publications (1)

Publication Number Publication Date
IN2015DN00029A true IN2015DN00029A (fr) 2015-05-22

Family

ID=46420202

Family Applications (1)

Application Number Title Priority Date Filing Date
IN29DEN2015 IN2015DN00029A (fr) 2012-06-29 2012-06-29

Country Status (6)

Country Link
US (1) US20150144184A1 (fr)
EP (1) EP2867926B1 (fr)
JP (1) JP2015525961A (fr)
CN (1) CN104412394B (fr)
IN (1) IN2015DN00029A (fr)
WO (1) WO2014000826A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015118740A1 (fr) * 2014-02-06 2015-08-13 パナソニックＩｐマネジメント株式会社 Cellule solaire
JP6350858B2 (ja) * 2014-05-26 2018-07-04 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法及び太陽電池
JP6422455B2 (ja) * 2016-02-08 2018-11-14 三菱電機株式会社 光電変換装置および光電変換装置の製造方法
CN108461569B (zh) * 2018-03-12 2020-07-14 南昌大学 一种具有局域发射极特性的Si基双面太阳电池结构
CN108365024A (zh) * 2018-03-12 2018-08-03 南昌大学 一种具有局域发射极特征的硅基同质结双面太阳电池结构
CN108305910A (zh) * 2018-03-12 2018-07-20 南昌大学 一种同质结晶体硅双面太阳电池结构
CN108336159A (zh) * 2018-03-12 2018-07-27 南昌大学 一种异质结晶体硅双面太阳电池结构
CN108461570A (zh) * 2018-03-12 2018-08-28 南昌大学 一种晶体硅双面太阳电池结构
CN108346707A (zh) * 2018-03-12 2018-07-31 南昌大学 一种进光区域无重掺杂层遮挡的异质结晶体硅双面太阳电池结构
CN108336155A (zh) * 2018-03-12 2018-07-27 南昌大学 一种hac-d晶体硅双面太阳电池结构
CN108336178A (zh) * 2018-03-12 2018-07-27 南昌大学 一种晶硅异质结双面太阳电池结构
CN108336157A (zh) * 2018-03-12 2018-07-27 南昌大学 一种局域非晶硅发射极晶体硅背场的双面太阳电池结构
CN108336160A (zh) * 2018-03-12 2018-07-27 南昌大学 一种钝化进光层的晶体硅双面太阳电池结构
CN108447935A (zh) * 2018-03-12 2018-08-24 南昌大学 一种钝化进光层的局域发射极晶体硅双面太阳电池结构
CN108346706A (zh) * 2018-03-12 2018-07-31 南昌大学 一种局域发射极同质结晶体硅双面太阳电池结构
CN108461553A (zh) * 2018-03-12 2018-08-28 南昌大学 一种具有局域非晶硅/晶体硅异质结特性的双面太阳电池结构
CN108336156A (zh) * 2018-03-12 2018-07-27 南昌大学 一种具有hac-d特征的晶体硅双面太阳电池结构
CN108336164A (zh) * 2018-03-12 2018-07-27 南昌大学 一种局域非晶硅/晶体硅异质结双面太阳电池结构
CN108336176A (zh) * 2018-03-12 2018-07-27 南昌大学 一种Si基局域发射极双面太阳电池结构
CN108336158A (zh) * 2018-03-12 2018-07-27 南昌大学 一种进光区域无重掺杂层遮挡的同质结晶体硅双面太阳电池结构
EP3624204B1 (fr) * 2018-09-13 2023-04-26 IMEC vzw Dépôt sélectif pour des motifs interdigités dans des cellules solaires
CN110896107A (zh) * 2018-09-13 2020-03-20 福建金石能源有限公司 一种双面发电的背接触异质结太阳能电池及其制作方法
CN112310232B (zh) * 2020-10-16 2023-03-24 泰州隆基乐叶光伏科技有限公司 太阳电池及生产方法、电池组件
CN113410328A (zh) * 2021-05-12 2021-09-17 北京工业大学 一种晶硅异质结太阳能电池
CN113823704A (zh) * 2021-11-23 2021-12-21 陕西众森电能科技有限公司 一种p基硅背接触太阳能电池及其制备方法
AU2022241631B1 (en) * 2022-08-05 2024-01-04 Jinko Solar Co., Ltd. Solar cell and photovoltaic module
CN116072739B (zh) 2022-08-05 2023-10-27 浙江晶科能源有限公司 太阳能电池及太阳能电池的制备方法、光伏组件
CN117153908B (zh) * 2023-09-12 2024-04-30 隆基绿能科技股份有限公司 一种背接触电池和光伏组件
CN118943226B (zh) * 2024-01-19 2025-08-01 长三角太阳能光伏技术创新中心 太阳电池及其制备方法、光伏组件、光伏系统
CN118213429A (zh) * 2024-03-15 2024-06-18 天合光能股份有限公司 太阳能电池结构、太阳能电池的制备方法及掩膜载具
CN118969878B (zh) * 2024-10-17 2024-12-20 福建金石能源有限公司 具有特定p型发射极的背接触电池及制作和应用

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US4090213A (en) * 1976-06-15 1978-05-16 California Institute Of Technology Induced junction solar cell and method of fabrication
US5034068A (en) * 1990-02-23 1991-07-23 Spectrolab, Inc. Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell
JP3203078B2 (ja) * 1992-12-09 2001-08-27 三洋電機株式会社 光起電力素子
JP3448098B2 (ja) * 1994-05-31 2003-09-16 シャープ株式会社 結晶シリコン太陽電池
JP2003298078A (ja) * 2002-03-29 2003-10-17 Ebara Corp 光起電力素子
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
NO20061668L (no) * 2006-04-12 2007-10-15 Renewable Energy Corp Solcelle og fremgangsmate for fremstilling av samme
EP2135292A2 (fr) * 2007-03-16 2009-12-23 BP Corporation North America Inc. Cellules solaires
US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
CN101814555B (zh) * 2010-04-12 2012-07-25 浙江大学 一种提高太阳电池效率的方法

Also Published As

Publication number Publication date
CN104412394B (zh) 2016-11-09
CN104412394A (zh) 2015-03-11
EP2867926A1 (fr) 2015-05-06
EP2867926B1 (fr) 2017-04-05
JP2015525961A (ja) 2015-09-07
WO2014000826A1 (fr) 2014-01-03
US20150144184A1 (en) 2015-05-28

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