IT1063690B - Metodo di fabbricazione di un di spoditivo a trasferimento di cariche e dispositivo a trasferimento di cariche fabbricato con l ausilio di tale metodo - Google Patents

Metodo di fabbricazione di un di spoditivo a trasferimento di cariche e dispositivo a trasferimento di cariche fabbricato con l ausilio di tale metodo

Info

Publication number
IT1063690B
IT1063690B IT26917/76A IT2691776A IT1063690B IT 1063690 B IT1063690 B IT 1063690B IT 26917/76 A IT26917/76 A IT 26917/76A IT 2691776 A IT2691776 A IT 2691776A IT 1063690 B IT1063690 B IT 1063690B
Authority
IT
Italy
Prior art keywords
charge
transfer device
aid
manufacture
device manufactured
Prior art date
Application number
IT26917/76A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1063690B publication Critical patent/IT1063690B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
IT26917/76A 1975-09-09 1976-09-06 Metodo di fabbricazione di un di spoditivo a trasferimento di cariche e dispositivo a trasferimento di cariche fabbricato con l ausilio di tale metodo IT1063690B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7510586A NL7510586A (nl) 1975-09-09 1975-09-09 Werkwijze voor het vervaardigen van een la- dingsoverdrachtinrichting en ladingsoverdracht- inrichting vervaardigd met behulp van de werk- wijze.

Publications (1)

Publication Number Publication Date
IT1063690B true IT1063690B (it) 1985-02-11

Family

ID=19824439

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26917/76A IT1063690B (it) 1975-09-09 1976-09-06 Metodo di fabbricazione di un di spoditivo a trasferimento di cariche e dispositivo a trasferimento di cariche fabbricato con l ausilio di tale metodo

Country Status (7)

Country Link
JP (1) JPS5233487A (it)
CA (1) CA1061471A (it)
DE (1) DE2639479A1 (it)
FR (1) FR2324124A1 (it)
GB (1) GB1495377A (it)
IT (1) IT1063690B (it)
NL (1) NL7510586A (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts
NL186886C (nl) * 1980-11-28 1992-03-16 Philips Nv Halfgeleiderinrichting.
JP4739703B2 (ja) * 2004-07-14 2011-08-03 富士フイルム株式会社 固体撮像素子の製造方法
TWI701768B (zh) * 2019-08-28 2020-08-11 力晶積成電子製造股份有限公司 內連線結構的製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1444047A (en) * 1973-02-28 1976-07-28 Hitachi Ltd Charge transfer semiconductor devices and methods of fabricating such devices
JPS579227B2 (it) * 1973-02-28 1982-02-20
US3911560A (en) * 1974-02-25 1975-10-14 Fairchild Camera Instr Co Method for manufacturing a semiconductor device having self-aligned implanted barriers with narrow gaps between electrodes

Also Published As

Publication number Publication date
DE2639479A1 (de) 1977-04-14
NL7510586A (nl) 1977-03-11
CA1061471A (en) 1979-08-28
FR2324124A1 (fr) 1977-04-08
JPS5233487A (en) 1977-03-14
GB1495377A (en) 1977-12-14

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