IT1089901B - Metodo per modificare le caratteristiche elettriche di dispositivi mos usando l inseri ento for zato per ioni - Google Patents

Metodo per modificare le caratteristiche elettriche di dispositivi mos usando l inseri ento for zato per ioni

Info

Publication number
IT1089901B
IT1089901B IT09653/77A IT965377A IT1089901B IT 1089901 B IT1089901 B IT 1089901B IT 09653/77 A IT09653/77 A IT 09653/77A IT 965377 A IT965377 A IT 965377A IT 1089901 B IT1089901 B IT 1089901B
Authority
IT
Italy
Prior art keywords
modify
ions
electrical characteristics
mos devices
forced
Prior art date
Application number
IT09653/77A
Other languages
English (en)
Original Assignee
Standard Microsyst Smc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Microsyst Smc filed Critical Standard Microsyst Smc
Application granted granted Critical
Publication of IT1089901B publication Critical patent/IT1089901B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM
    • H10B20/383—Channel doping programmed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0163—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer
IT09653/77A 1976-12-14 1977-12-13 Metodo per modificare le caratteristiche elettriche di dispositivi mos usando l inseri ento for zato per ioni IT1089901B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/750,368 US4080718A (en) 1976-12-14 1976-12-14 Method of modifying electrical characteristics of MOS devices using ion implantation

Publications (1)

Publication Number Publication Date
IT1089901B true IT1089901B (it) 1985-06-18

Family

ID=25017581

Family Applications (1)

Application Number Title Priority Date Filing Date
IT09653/77A IT1089901B (it) 1976-12-14 1977-12-13 Metodo per modificare le caratteristiche elettriche di dispositivi mos usando l inseri ento for zato per ioni

Country Status (8)

Country Link
US (1) US4080718A (it)
JP (1) JPS5375781A (it)
CA (1) CA1111147A (it)
DE (1) DE2750209C2 (it)
FR (1) FR2374739A1 (it)
GB (2) GB1594957A (it)
IT (1) IT1089901B (it)
NL (1) NL7713855A (it)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4294001A (en) * 1979-01-08 1981-10-13 Texas Instruments Incorporated Method of making implant programmable metal gate MOS read only memory
DE2832388C2 (de) * 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat
US4208780A (en) * 1978-08-03 1980-06-24 Rca Corporation Last-stage programming of semiconductor integrated circuits including selective removal of passivation layer
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
US4210465A (en) * 1978-11-20 1980-07-01 Ncr Corporation CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel
JPS5570072A (en) * 1978-11-21 1980-05-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor read only memory
US4305760A (en) * 1978-12-22 1981-12-15 Ncr Corporation Polysilicon-to-substrate contact processing
US4342100A (en) * 1979-01-08 1982-07-27 Texas Instruments Incorporated Implant programmable metal gate MOS read only memory
JPS5599722A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Preparation of semiconductor device
JPS5643756A (en) * 1979-09-18 1981-04-22 Seiko Epson Corp Manufacture of semiconductor device
US4336647A (en) * 1979-12-21 1982-06-29 Texas Instruments Incorporated Method of making implant programmable N-channel read only memory
US4441941A (en) * 1980-03-06 1984-04-10 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device employing element isolation using insulating materials
US4315781A (en) * 1980-04-23 1982-02-16 Hughes Aircraft Company Method of controlling MOSFET threshold voltage with self-aligned channel stop
JPS56150860A (en) * 1980-04-24 1981-11-21 Fujitsu Ltd Manufacture of semiconductor memory device
US4519849A (en) * 1980-10-14 1985-05-28 Intel Corporation Method of making EPROM cell with reduced programming voltage
US4364165A (en) * 1981-05-28 1982-12-21 General Motors Corporation Late programming using a silicon nitride interlayer
US4358889A (en) * 1981-05-28 1982-11-16 General Motors Corporation Process for making a late programming enhanced contact ROM
US4359817A (en) * 1981-05-28 1982-11-23 General Motors Corporation Method for making late programmable read-only memory devices
US4365405A (en) * 1981-05-28 1982-12-28 General Motors Corporation Method of late programming read only memory devices
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
JPS583265A (ja) * 1981-06-30 1983-01-10 Toshiba Corp 半導体装置の製造方法
JPS5821369A (ja) * 1981-07-30 1983-02-08 Toshiba Corp 固定記憶装置
JPS59132651A (ja) * 1983-01-20 1984-07-30 Sanyo Electric Co Ltd 半導体読出し専用メモリのデ−タ固定方法
US4547959A (en) * 1983-02-22 1985-10-22 General Motors Corporation Uses for buried contacts in integrated circuits
US4514893A (en) * 1983-04-29 1985-05-07 At&T Bell Laboratories Fabrication of FETs
DE3318213A1 (de) * 1983-05-19 1984-11-22 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum herstellen eines integrierten isolierschicht-feldeffekttransistors mit zur gateelektrode selbstausgerichteten kontakten
JPS5910261A (ja) * 1983-06-24 1984-01-19 Toshiba Corp 半導体論理回路装置
US5210042A (en) * 1983-09-26 1993-05-11 Fujitsu Limited Method of producing semiconductor device
JPS60130844A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体装置の製造方法
IT1213230B (it) * 1984-10-23 1989-12-14 Ates Componenti Elettron Processo planox a becco ridotto per la formazione di componenti elettronici integrati.
JPS61222175A (ja) * 1985-03-01 1986-10-02 Fujitsu Ltd 半導体記憶装置の製造方法
JPS61183548U (it) * 1986-05-01 1986-11-15
US4679302A (en) * 1986-05-12 1987-07-14 Northern Telecom Limited Double polysilicon integrated circuit process
US5275959A (en) * 1986-06-25 1994-01-04 Hitachi, Ltd. Process for producing ROM
US5149669A (en) * 1987-03-06 1992-09-22 Seiko Instruments Inc. Method of forming an isolation region in a semiconductor device
JP2797538B2 (ja) * 1989-10-27 1998-09-17 ソニー株式会社 読み出し専用メモリ装置の製造方法
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US5215937A (en) * 1992-05-07 1993-06-01 Advanced Micro Devices, Inc. Optimizing doping control in short channel MOS
US5212106A (en) * 1992-05-07 1993-05-18 Advanced Micro Devices, Inc. Optimizing doping control in short channel MOS
JP3181695B2 (ja) * 1992-07-08 2001-07-03 ローム株式会社 Ｓｏｉ基板を用いた半導体装置の製造方法
JP2701763B2 (ja) * 1994-11-04 1998-01-21 日本電気株式会社 半導体装置およびその製造方法
AU6940800A (en) * 1999-08-27 2001-03-26 Macronix America, Inc. New approach for multilevel mrom
US6455903B1 (en) * 2000-01-26 2002-09-24 Advanced Micro Devices, Inc. Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation
JP2001313389A (ja) * 2000-05-01 2001-11-09 Seiko Epson Corp 半導体装置およびその製造方法
CN102800593B (zh) * 2011-05-25 2016-03-16 中芯国际集成电路制造(上海)有限公司 晶体管形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2112024B1 (it) * 1970-07-02 1973-11-16 Commissariat Energie Atomique
US3775191A (en) * 1971-06-28 1973-11-27 Bell Canada Northern Electric Modification of channel regions in insulated gate field effect transistors
GB1345818A (en) * 1971-07-27 1974-02-06 Mullard Ltd Semiconductor devices
GB1392599A (en) * 1971-07-28 1975-04-30 Mullard Ltd Semiconductor memory elements
US3837071A (en) * 1973-01-16 1974-09-24 Rca Corp Method of simultaneously making a sigfet and a mosfet
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices
US3914855A (en) * 1974-05-09 1975-10-28 Bell Telephone Labor Inc Methods for making MOS read-only memories
JPS5947464B2 (ja) * 1974-09-11 1984-11-19 株式会社日立製作所 半導体装置
JPS51111020A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor fixing memory equipment

Also Published As

Publication number Publication date
DE2750209C2 (de) 1986-03-27
CA1111147A (en) 1981-10-20
GB1594957A (en) 1981-08-05
JPS6219077B2 (it) 1987-04-25
NL7713855A (nl) 1978-06-16
JPS5375781A (en) 1978-07-05
FR2374739A1 (fr) 1978-07-13
FR2374739B1 (it) 1983-01-07
GB1594958A (en) 1981-08-05
DE2750209A1 (de) 1978-06-15
US4080718A (en) 1978-03-28

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