IT1100624B - Diodi gio e complessi includenti tali diodi - Google Patents

Diodi gio e complessi includenti tali diodi

Info

Publication number
IT1100624B
IT1100624B IT30899/78A IT3089978A IT1100624B IT 1100624 B IT1100624 B IT 1100624B IT 30899/78 A IT30899/78 A IT 30899/78A IT 3089978 A IT3089978 A IT 3089978A IT 1100624 B IT1100624 B IT 1100624B
Authority
IT
Italy
Prior art keywords
diodes
gio
complexes including
complexes
gio diodes
Prior art date
Application number
IT30899/78A
Other languages
English (en)
Other versions
IT7830899A0 (it
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT7830899A0 publication Critical patent/IT7830899A0/it
Application granted granted Critical
Publication of IT1100624B publication Critical patent/IT1100624B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
IT30899/78A 1977-12-20 1978-12-15 Diodi gio e complessi includenti tali diodi IT1100624B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52935/77A GB1587540A (en) 1977-12-20 1977-12-20 Gate turn-off diodes and arrangements including such diodes

Publications (2)

Publication Number Publication Date
IT7830899A0 IT7830899A0 (it) 1978-12-15
IT1100624B true IT1100624B (it) 1985-09-28

Family

ID=10465891

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30899/78A IT1100624B (it) 1977-12-20 1978-12-15 Diodi gio e complessi includenti tali diodi

Country Status (10)

Country Link
US (1) US4309714A (it)
JP (1) JPS54100271A (it)
AU (1) AU522056B2 (it)
CA (1) CA1112373A (it)
DE (1) DE2854174C2 (it)
FR (1) FR2412946B1 (it)
GB (1) GB1587540A (it)
IT (1) IT1100624B (it)
NL (1) NL7812245A (it)
SE (1) SE436084B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1131800A (en) * 1978-12-20 1982-09-14 Bernard T. Murphy High voltage junction solid-state switch
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
US4466173A (en) * 1981-11-23 1984-08-21 General Electric Company Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
JPS5994453A (ja) * 1982-10-25 1984-05-31 ゼネラル・エレクトリック・カンパニイ オン抵抗を低減した高圧半導体デバイス
US4982262A (en) * 1985-01-15 1991-01-01 At&T Bell Laboratories Inverted groove isolation technique for merging dielectrically isolated semiconductor devices
US4738933A (en) * 1985-08-27 1988-04-19 Fei Microwave, Inc. Monolithic PIN diode and method for its manufacture
DE3686027D1 (de) * 1985-11-29 1992-08-20 Bbc Brown Boveri & Cie Rueckwaertsleitender thyristor.
FR2664744B1 (fr) * 1990-07-16 1993-08-06 Sgs Thomson Microelectronics Diode pin a faible surtension initiale.
JP2005109163A (ja) * 2003-09-30 2005-04-21 Nec Electronics Corp 半導体素子
US7026669B2 (en) * 2004-06-03 2006-04-11 Ranbir Singh Lateral channel transistor
JP4753898B2 (ja) * 2007-02-28 2011-08-24 東南精機株式会社 機械油中の金属ダスト分離除去装置
JP5155600B2 (ja) * 2007-05-24 2013-03-06 新電元工業株式会社 静電誘導サイリスタ
JP5300120B2 (ja) * 2007-09-03 2013-09-25 新電元工業株式会社 サイリスタ
US8164154B1 (en) 2010-12-17 2012-04-24 Aram Tanielian Low profile Schottky barrier diode for solar cells and solar panels and method of fabrication thereof
CN109411548A (zh) * 2018-10-30 2019-03-01 深圳市金鑫城纸品有限公司 功率二极管及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US4092660A (en) * 1974-09-16 1978-05-30 Texas Instruments Incorporated High power field effect transistor

Also Published As

Publication number Publication date
AU522056B2 (en) 1982-05-13
CA1112373A (en) 1981-11-10
DE2854174C2 (de) 1983-08-18
GB1587540A (en) 1981-04-08
JPS5650427B2 (it) 1981-11-28
SE7812941L (sv) 1979-06-21
US4309714A (en) 1982-01-05
DE2854174A1 (de) 1979-06-21
IT7830899A0 (it) 1978-12-15
NL7812245A (nl) 1979-06-22
AU4267078A (en) 1979-06-28
JPS54100271A (en) 1979-08-07
FR2412946A1 (fr) 1979-07-20
FR2412946B1 (fr) 1986-11-14
SE436084B (sv) 1984-11-05

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