SE436084B - Frankopplingsbar grinddiod - Google Patents

Frankopplingsbar grinddiod

Info

Publication number: SE436084B
Authority: SE; Sweden
Prior art keywords: zone; gate; anode; cathode; diode
Prior art date: 1977-12-20

Application number

SE7812941A

Other languages

English (en)

Swedish (sv)

Other versions

SE7812941L (sv

Inventor

J A G Slatter

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-12-20

Filing date

1978-12-18

Publication date

1984-11-05

1978-12-18 Application filed by Philips Nv filed Critical Philips Nv

1979-06-21 Publication of SE7812941L publication Critical patent/SE7812941L/xx

1984-11-05 Publication of SE436084B publication Critical patent/SE436084B/sv

Links

239000002019 doping agent Substances 0.000 claims 1
238000005530 etching Methods 0.000 description 17
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
230000007704 transition Effects 0.000 description 9
239000000463 material Substances 0.000 description 7
238000000034 method Methods 0.000 description 7
238000009792 diffusion process Methods 0.000 description 5
230000008901 benefit Effects 0.000 description 4
238000010276 construction Methods 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
239000000377 silicon dioxide Substances 0.000 description 4
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
230000008569 process Effects 0.000 description 3
OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
239000000370 acceptor Substances 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
239000013078 crystal Substances 0.000 description 2
230000001939 inductive effect Effects 0.000 description 2
238000001459 lithography Methods 0.000 description 2
230000000873 masking effect Effects 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000012986 modification Methods 0.000 description 2
229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
229910052581 Si3N4 Inorganic materials 0.000 description 1
239000012670 alkaline solution Substances 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
230000005684 electric field Effects 0.000 description 1
230000005284 excitation Effects 0.000 description 1
239000011521 glass Substances 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
239000007787 solid Substances 0.000 description 1
239000000243 solution Substances 0.000 description 1
239000007858 starting material Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes

Landscapes

Thyristors (AREA)
Bipolar Transistors (AREA)

SE7812941A 1977-12-20 1978-12-18 Frankopplingsbar grinddiod SE436084B (sv)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB52935/77A GB1587540A (en)	1977-12-20	1977-12-20	Gate turn-off diodes and arrangements including such diodes

Publications (2)

Publication Number	Publication Date
SE7812941L SE7812941L (sv)	1979-06-21
SE436084B true SE436084B (sv)	1984-11-05

Family

ID=10465891

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE7812941A SE436084B (sv)	1977-12-20	1978-12-18	Frankopplingsbar grinddiod

Country Status (10)

Country	Link
US (1)	US4309714A (it)
JP (1)	JPS54100271A (it)
AU (1)	AU522056B2 (it)
CA (1)	CA1112373A (it)
DE (1)	DE2854174C2 (it)
FR (1)	FR2412946B1 (it)
GB (1)	GB1587540A (it)
IT (1)	IT1100624B (it)
NL (1)	NL7812245A (it)
SE (1)	SE436084B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA1131800A (en) *	1978-12-20	1982-09-14	Bernard T. Murphy	High voltage junction solid-state switch
CA1145057A (en) *	1979-12-28	1983-04-19	Adrian R. Hartman	High voltage solid-state switch
JPS5788771A (en) *	1980-11-21	1982-06-02	Semiconductor Res Found	Electrostatic induction thyristor
US4466173A (en) *	1981-11-23	1984-08-21	General Electric Company	Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
JPS5994453A (ja) *	1982-10-25	1984-05-31	ゼネラル・エレクトリック・カンパニイ	オン抵抗を低減した高圧半導体デバイス
US4982262A (en) *	1985-01-15	1991-01-01	At&T Bell Laboratories	Inverted groove isolation technique for merging dielectrically isolated semiconductor devices
US4738933A (en) *	1985-08-27	1988-04-19	Fei Microwave, Inc.	Monolithic PIN diode and method for its manufacture
DE3686027D1 (de) *	1985-11-29	1992-08-20	Bbc Brown Boveri & Cie	Rueckwaertsleitender thyristor.
FR2664744B1 (fr) *	1990-07-16	1993-08-06	Sgs Thomson Microelectronics	Diode pin a faible surtension initiale.
JP2005109163A (ja) *	2003-09-30	2005-04-21	Nec Electronics Corp	半導体素子
US7026669B2 (en) *	2004-06-03	2006-04-11	Ranbir Singh	Lateral channel transistor
JP4753898B2 (ja) *	2007-02-28	2011-08-24	東南精機株式会社	機械油中の金属ダスト分離除去装置
JP5155600B2 (ja) *	2007-05-24	2013-03-06	新電元工業株式会社	静電誘導サイリスタ
JP5300120B2 (ja) *	2007-09-03	2013-09-25	新電元工業株式会社	サイリスタ
US8164154B1 (en)	2010-12-17	2012-04-24	Aram Tanielian	Low profile Schottky barrier diode for solar cells and solar panels and method of fabrication thereof
CN109411548A (zh) *	2018-10-30	2019-03-01	深圳市金鑫城纸品有限公司	功率二极管及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2102103A1 (de) *	1970-01-22	1971-07-29	Rca Corp	Durch Feldeffekt gesteuerte Diode
US4092660A (en) *	1974-09-16	1978-05-30	Texas Instruments Incorporated	High power field effect transistor

1977
- 1977-12-20 GB GB52935/77A patent/GB1587540A/en not_active Expired
1978
- 1978-12-13 US US05/969,029 patent/US4309714A/en not_active Expired - Lifetime
- 1978-12-14 CA CA318,004A patent/CA1112373A/en not_active Expired
- 1978-12-15 DE DE2854174A patent/DE2854174C2/de not_active Expired
- 1978-12-15 IT IT30899/78A patent/IT1100624B/it active
- 1978-12-18 FR FR7835604A patent/FR2412946B1/fr not_active Expired
- 1978-12-18 NL NL7812245A patent/NL7812245A/xx not_active Application Discontinuation
- 1978-12-18 SE SE7812941A patent/SE436084B/sv unknown
- 1978-12-19 AU AU42670/78A patent/AU522056B2/en not_active Expired
- 1978-12-20 JP JP15814078A patent/JPS54100271A/ja active Granted

Also Published As

Publication number	Publication date
AU4267078A (en)	1979-06-28
IT7830899A0 (it)	1978-12-15
FR2412946B1 (fr)	1986-11-14
JPS54100271A (en)	1979-08-07
JPS5650427B2 (it)	1981-11-28
NL7812245A (nl)	1979-06-22
FR2412946A1 (fr)	1979-07-20
DE2854174A1 (de)	1979-06-21
DE2854174C2 (de)	1983-08-18
GB1587540A (en)	1981-04-08
US4309714A (en)	1982-01-05
AU522056B2 (en)	1982-05-13
SE7812941L (sv)	1979-06-21
CA1112373A (en)	1981-11-10
IT1100624B (it)	1985-09-28

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