IT1101183B - Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante - Google Patents

Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante

Info

Publication number
IT1101183B
IT1101183B IT30507/78A IT3050778A IT1101183B IT 1101183 B IT1101183 B IT 1101183B IT 30507/78 A IT30507/78 A IT 30507/78A IT 3050778 A IT3050778 A IT 3050778A IT 1101183 B IT1101183 B IT 1101183B
Authority
IT
Italy
Prior art keywords
intagrated
emitter
improvement
production process
breakdown voltage
Prior art date
Application number
IT30507/78A
Other languages
English (en)
Other versions
IT7830507A0 (it
Inventor
Angelo Casadei
Mario Camagni
Franco Bertotti
Paolo Carmina
Auretta Cuccia
Vincenzo Prestileo
Brunello Sanasi
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT30507/78A priority Critical patent/IT1101183B/it
Publication of IT7830507A0 publication Critical patent/IT7830507A0/it
Priority to SE7909953A priority patent/SE454631B/sv
Priority to GB7941857A priority patent/GB2037487A/en
Priority to FR7929737A priority patent/FR2443742A1/fr
Priority to DE19792948800 priority patent/DE2948800A1/de
Application granted granted Critical
Publication of IT1101183B publication Critical patent/IT1101183B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
IT30507/78A 1978-12-04 1978-12-04 Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante IT1101183B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT30507/78A IT1101183B (it) 1978-12-04 1978-12-04 Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante
SE7909953A SE454631B (sv) 1978-12-04 1979-12-03 Sett for tillverkning av en integrerad halvledaranordning med den epitaxiella tillvexten uppdelad i tre separata steg stabiliserade vid tre olika temperaturer
GB7941857A GB2037487A (en) 1978-12-04 1979-12-04 Method for producing an integrated semiconductor device
FR7929737A FR2443742A1 (fr) 1978-12-04 1979-12-04 Perfectionnement apporte au procede pour la production de transistors bipolaires integres a tension elevee de rupture collecteur-emetteur et produit ainsi obtenu
DE19792948800 DE2948800A1 (de) 1978-12-04 1979-12-04 Verfahren zur herstellung integrierter, bipolarer transistoren mit erhoehter durchbruchspannung zwischen kollektor und emitter sowie dadurch hergestellter transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT30507/78A IT1101183B (it) 1978-12-04 1978-12-04 Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante

Publications (2)

Publication Number Publication Date
IT7830507A0 IT7830507A0 (it) 1978-12-04
IT1101183B true IT1101183B (it) 1985-09-28

Family

ID=11229874

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30507/78A IT1101183B (it) 1978-12-04 1978-12-04 Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante

Country Status (5)

Country Link
DE (1) DE2948800A1 (it)
FR (1) FR2443742A1 (it)
GB (1) GB2037487A (it)
IT (1) IT1101183B (it)
SE (1) SE454631B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201600130185A1 (it) * 2016-12-22 2018-06-22 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo a semiconduttore integrante un transistore a conduzione verticale, e dispositivo a semiconduttore

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1300768A (en) * 1969-07-29 1972-12-20 Fairchild Camera Instr Co Improvements in or relating to semiconductor structures

Also Published As

Publication number Publication date
DE2948800A1 (de) 1980-06-19
FR2443742A1 (fr) 1980-07-04
IT7830507A0 (it) 1978-12-04
FR2443742B1 (it) 1985-03-08
GB2037487A (en) 1980-07-09
SE7909953L (sv) 1980-06-05
SE454631B (sv) 1988-05-16

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Effective date: 19961227