SE454631B - Sett for tillverkning av en integrerad halvledaranordning med den epitaxiella tillvexten uppdelad i tre separata steg stabiliserade vid tre olika temperaturer - Google Patents

Sett for tillverkning av en integrerad halvledaranordning med den epitaxiella tillvexten uppdelad i tre separata steg stabiliserade vid tre olika temperaturer

Info

Publication number
SE454631B
SE454631B SE7909953A SE7909953A SE454631B SE 454631 B SE454631 B SE 454631B SE 7909953 A SE7909953 A SE 7909953A SE 7909953 A SE7909953 A SE 7909953A SE 454631 B SE454631 B SE 454631B
Authority
SE
Sweden
Prior art keywords
stage
epitaxial
type
thickness
areas
Prior art date
Application number
SE7909953A
Other languages
English (en)
Swedish (sv)
Other versions
SE7909953L (sv
Inventor
A Casadei
M Camagni
F Bertotti
P Carmina
A Cuccia
V Prestileo
B Sanasi
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of SE7909953L publication Critical patent/SE7909953L/
Publication of SE454631B publication Critical patent/SE454631B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates

Landscapes

  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
SE7909953A 1978-12-04 1979-12-03 Sett for tillverkning av en integrerad halvledaranordning med den epitaxiella tillvexten uppdelad i tre separata steg stabiliserade vid tre olika temperaturer SE454631B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT30507/78A IT1101183B (it) 1978-12-04 1978-12-04 Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante

Publications (2)

Publication Number Publication Date
SE7909953L SE7909953L (sv) 1980-06-05
SE454631B true SE454631B (sv) 1988-05-16

Family

ID=11229874

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7909953A SE454631B (sv) 1978-12-04 1979-12-03 Sett for tillverkning av en integrerad halvledaranordning med den epitaxiella tillvexten uppdelad i tre separata steg stabiliserade vid tre olika temperaturer

Country Status (5)

Country Link
DE (1) DE2948800A1 (it)
FR (1) FR2443742A1 (it)
GB (1) GB2037487A (it)
IT (1) IT1101183B (it)
SE (1) SE454631B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201600130185A1 (it) * 2016-12-22 2018-06-22 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo a semiconduttore integrante un transistore a conduzione verticale, e dispositivo a semiconduttore

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1300768A (en) * 1969-07-29 1972-12-20 Fairchild Camera Instr Co Improvements in or relating to semiconductor structures

Also Published As

Publication number Publication date
DE2948800A1 (de) 1980-06-19
FR2443742A1 (fr) 1980-07-04
IT7830507A0 (it) 1978-12-04
FR2443742B1 (it) 1985-03-08
GB2037487A (en) 1980-07-09
SE7909953L (sv) 1980-06-05
IT1101183B (it) 1985-09-28

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