IT1106983B - Memoria a transistori e condensatori - Google Patents

Memoria a transistori e condensatori

Info

Publication number
IT1106983B
IT1106983B IT67112/78A IT6711278A IT1106983B IT 1106983 B IT1106983 B IT 1106983B IT 67112/78 A IT67112/78 A IT 67112/78A IT 6711278 A IT6711278 A IT 6711278A IT 1106983 B IT1106983 B IT 1106983B
Authority
IT
Italy
Prior art keywords
transistor
capacitor memory
capacitor
memory
Prior art date
Application number
IT67112/78A
Other languages
English (en)
Other versions
IT7867112A0 (it
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT7867112A0 publication Critical patent/IT7867112A0/it
Application granted granted Critical
Publication of IT1106983B publication Critical patent/IT1106983B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
IT67112/78A 1977-01-24 1978-01-20 Memoria a transistori e condensatori IT1106983B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76180677A 1977-01-24 1977-01-24

Publications (2)

Publication Number Publication Date
IT7867112A0 IT7867112A0 (it) 1978-01-20
IT1106983B true IT1106983B (it) 1985-11-18

Family

ID=25063317

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67112/78A IT1106983B (it) 1977-01-24 1978-01-20 Memoria a transistori e condensatori

Country Status (6)

Country Link
JP (1) JPS5393737A (it)
BE (1) BE863126A (it)
DE (1) DE2802761A1 (it)
FR (1) FR2378331A1 (it)
IT (1) IT1106983B (it)
NL (1) NL7800798A (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607388B2 (ja) * 1978-09-08 1985-02-23 富士通株式会社 半導体記憶装置
KR930006620B1 (ko) * 1990-11-06 1993-07-21 재단법인 한국전자통신연구소 저잡음 특성을 갖는 다이내믹 램

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876992A (en) * 1972-11-01 1975-04-08 Ibm Bipolar transistor memory with capacitive storage
US3979734A (en) * 1975-06-16 1976-09-07 International Business Machines Corporation Multiple element charge storage memory cell

Also Published As

Publication number Publication date
DE2802761A1 (de) 1978-07-27
JPS5393737A (en) 1978-08-17
FR2378331A1 (fr) 1978-08-18
NL7800798A (nl) 1978-07-26
BE863126A (fr) 1978-05-16
IT7867112A0 (it) 1978-01-20

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