IT1122305B - Organizzazione di una memoria - Google Patents
Organizzazione di una memoriaInfo
- Publication number
- IT1122305B IT1122305B IT24609/79A IT2460979A IT1122305B IT 1122305 B IT1122305 B IT 1122305B IT 24609/79 A IT24609/79 A IT 24609/79A IT 2460979 A IT2460979 A IT 2460979A IT 1122305 B IT1122305 B IT 1122305B
- Authority
- IT
- Italy
- Prior art keywords
- organization
- memory
- Prior art date
Links
- 230000008520 organization Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/931,530 US4189782A (en) | 1978-08-07 | 1978-08-07 | Memory organization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7924609A0 IT7924609A0 (it) | 1979-07-24 |
| IT1122305B true IT1122305B (it) | 1986-04-23 |
Family
ID=25460924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT24609/79A IT1122305B (it) | 1978-08-07 | 1979-07-24 | Organizzazione di una memoria |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4189782A (it) |
| JP (1) | JPS5821359B2 (it) |
| DE (1) | DE2932020C2 (it) |
| FR (1) | FR2433223B1 (it) |
| GB (1) | GB2028046B (it) |
| IT (1) | IT1122305B (it) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4724530A (en) * | 1978-10-03 | 1988-02-09 | Rca Corporation | Five transistor CMOS memory cell including diodes |
| JPS5597734A (en) * | 1979-01-19 | 1980-07-25 | Toshiba Corp | Logic circuit |
| US4281400A (en) * | 1979-12-28 | 1981-07-28 | Rca Corporation | Circuit for reducing the loading effect of an insulated-gate field-effect transistor (IGFET) on a signal source |
| US4463318A (en) * | 1982-08-30 | 1984-07-31 | Rca Corporation | Power amplifier circuit employing field-effect power transistors |
| US4506349A (en) * | 1982-12-20 | 1985-03-19 | General Electric Company | Cross-coupled transistor memory cell for MOS random access memory of reduced power dissipation |
| US4499558A (en) * | 1983-02-04 | 1985-02-12 | General Electric Company | Five-transistor static memory cell implemental in CMOS/bulk |
| JPS59191648A (ja) * | 1983-04-14 | 1984-10-30 | Sanyo Electric Co Ltd | コ−ド検出回路 |
| JPS60158459U (ja) * | 1984-03-30 | 1985-10-22 | フランスベッド株式会社 | マツトレス装置 |
| US5051959A (en) * | 1985-08-14 | 1991-09-24 | Fujitsu Limited | Complementary semiconductor memory device including cell access transistor and word line driving transistor having channels of different conductivity type |
| JPS6238592A (ja) * | 1985-08-14 | 1987-02-19 | Fujitsu Ltd | 相補型メモリの行選択線駆動回路 |
| US4821233A (en) * | 1985-09-19 | 1989-04-11 | Xilinx, Incorporated | 5-transistor memory cell with known state on power-up |
| US4750155A (en) * | 1985-09-19 | 1988-06-07 | Xilinx, Incorporated | 5-Transistor memory cell which can be reliably read and written |
| JPS62136919A (ja) * | 1985-12-10 | 1987-06-19 | Mitsubishi Electric Corp | ドライバ−回路 |
| JPS63104290A (ja) * | 1986-10-21 | 1988-05-09 | Nec Corp | 半導体記憶装置 |
| JPS63146559U (it) * | 1987-03-18 | 1988-09-27 | ||
| JP3228759B2 (ja) * | 1990-01-24 | 2001-11-12 | セイコーエプソン株式会社 | 半導体記憶装置及びデータ処理装置 |
| GB9007791D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
| GB2243233A (en) * | 1990-04-06 | 1991-10-23 | Mosaid Inc | DRAM word line driver |
| GB9007790D0 (en) * | 1990-04-06 | 1990-06-06 | Lines Valerie L | Dynamic memory wordline driver scheme |
| US5751643A (en) * | 1990-04-06 | 1998-05-12 | Mosaid Technologies Incorporated | Dynamic memory word line driver |
| JPH0878433A (ja) * | 1994-08-31 | 1996-03-22 | Nec Corp | 半導体装置 |
| US5784313A (en) * | 1995-08-18 | 1998-07-21 | Xilinx, Inc. | Programmable logic device including configuration data or user data memory slices |
| US10985162B2 (en) * | 2018-12-14 | 2021-04-20 | John Bennett | System for accurate multiple level gain cells |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3521242A (en) * | 1967-05-02 | 1970-07-21 | Rca Corp | Complementary transistor write and ndro for memory cell |
| GB1504867A (en) * | 1974-06-05 | 1978-03-22 | Rca Corp | Voltage amplitude multiplying circuits |
| US4063225A (en) * | 1976-03-08 | 1977-12-13 | Rca Corporation | Memory cell and array |
| US4095282A (en) * | 1976-11-23 | 1978-06-13 | Westinghouse Electric Corp. | Memory including varactor circuit to boost address signals |
| US4156940A (en) * | 1978-03-27 | 1979-05-29 | Rca Corporation | Memory array with bias voltage generator |
-
1978
- 1978-08-07 US US05/931,530 patent/US4189782A/en not_active Expired - Lifetime
-
1979
- 1979-07-24 IT IT24609/79A patent/IT1122305B/it active
- 1979-08-03 JP JP54099800A patent/JPS5821359B2/ja not_active Expired
- 1979-08-06 GB GB7927386A patent/GB2028046B/en not_active Expired
- 1979-08-07 FR FR7920223A patent/FR2433223B1/fr not_active Expired
- 1979-08-07 DE DE2932020A patent/DE2932020C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5821359B2 (ja) | 1983-04-28 |
| GB2028046A (en) | 1980-02-27 |
| DE2932020C2 (de) | 1982-04-29 |
| FR2433223B1 (fr) | 1985-11-22 |
| US4189782A (en) | 1980-02-19 |
| JPS5525895A (en) | 1980-02-23 |
| GB2028046B (en) | 1982-08-25 |
| IT7924609A0 (it) | 1979-07-24 |
| FR2433223A1 (fr) | 1980-03-07 |
| DE2932020A1 (de) | 1980-02-14 |
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