IT1168715B - Amplificatore differenziale costituito da transistor ad effetto di campo del tipo metallo-isolante-semiconduttore - Google Patents

Amplificatore differenziale costituito da transistor ad effetto di campo del tipo metallo-isolante-semiconduttore

Info

Publication number
IT1168715B
IT1168715B IT22738/83A IT2273883A IT1168715B IT 1168715 B IT1168715 B IT 1168715B IT 22738/83 A IT22738/83 A IT 22738/83A IT 2273883 A IT2273883 A IT 2273883A IT 1168715 B IT1168715 B IT 1168715B
Authority
IT
Italy
Prior art keywords
insulating
metal
field
effect transistor
differential amplifier
Prior art date
Application number
IT22738/83A
Other languages
English (en)
Other versions
IT8322738A0 (it
Inventor
Kunimi Nobuo
Shimizu Koichi
Suzuki Toshiro
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8322738A0 publication Critical patent/IT8322738A0/it
Application granted granted Critical
Publication of IT1168715B publication Critical patent/IT1168715B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3028—CMOS common source output SEPP amplifiers with symmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45192—Folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H03F3/45641—Measuring at the loading circuit of the differential amplifier
    • H03F3/45659—Controlling the loading circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45508—Indexing scheme relating to differential amplifiers the CSC comprising a voltage generating circuit as bias circuit for the CSC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45631—Indexing scheme relating to differential amplifiers the LC comprising one or more capacitors, e.g. coupling capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
IT22738/83A 1982-09-03 1983-09-01 Amplificatore differenziale costituito da transistor ad effetto di campo del tipo metallo-isolante-semiconduttore IT1168715B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57152731A JPS5943614A (ja) 1982-09-03 1982-09-03 差動増幅回路

Publications (2)

Publication Number Publication Date
IT8322738A0 IT8322738A0 (it) 1983-09-01
IT1168715B true IT1168715B (it) 1987-05-20

Family

ID=15546923

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22738/83A IT1168715B (it) 1982-09-03 1983-09-01 Amplificatore differenziale costituito da transistor ad effetto di campo del tipo metallo-isolante-semiconduttore

Country Status (7)

Country Link
US (1) US4538114A (it)
JP (1) JPS5943614A (it)
KR (1) KR900008753B1 (it)
DE (1) DE3331626A1 (it)
FR (1) FR2532797B1 (it)
GB (1) GB2126817A (it)
IT (1) IT1168715B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4658157A (en) * 1985-05-31 1987-04-14 Rca Corporation IGFET comparator circuit having greater control of intended offset voltage
US4644295A (en) * 1986-02-04 1987-02-17 Motorola, Inc. Balanced differential load and method
EP0261482B1 (de) * 1986-09-26 1994-07-20 Siemens Aktiengesellschaft Operationsverstärker
JPS63240109A (ja) * 1987-03-27 1988-10-05 Toshiba Corp 差動増幅器
IT1214249B (it) * 1987-06-10 1990-01-10 Sgs Microelettronica Spa Amplificatore operazionale di potenza cmos ad alte prestazioni.
US4924191A (en) * 1989-04-18 1990-05-08 Erbtec Engineering, Inc. Amplifier having digital bias control apparatus
IT1239386B (it) * 1990-03-13 1993-10-20 Sgs Thomson Microelectronics Amplificatore operazionale cmos a transconduttanza
US5132560A (en) * 1990-09-28 1992-07-21 Siemens Corporate Research, Inc. Voltage comparator with automatic output-level adjustment
US5451898A (en) * 1993-11-12 1995-09-19 Rambus, Inc. Bias circuit and differential amplifier having stabilized output swing
US5523718A (en) * 1994-08-03 1996-06-04 Analog Devices, Inc. Balanced double-folded cascode operational amplifier
FR2770947B1 (fr) * 1997-11-07 1999-12-24 Sgs Thomson Microelectronics Amplificateur differentiel a transistor mos
US6362687B2 (en) * 1999-05-24 2002-03-26 Science & Technology Corporation Apparatus for and method of controlling amplifier output offset using body biasing in MOS transistors
JP3666377B2 (ja) 2000-09-27 2005-06-29 株式会社デンソー 演算増幅器
US11258414B2 (en) * 2020-02-27 2022-02-22 Texas Instruments Incorporated Compact offset drift trim implementation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5429073B2 (it) * 1973-04-07 1979-09-20
US4010425A (en) * 1975-10-02 1977-03-01 Rca Corporation Current mirror amplifier
US4267517A (en) * 1977-12-07 1981-05-12 Tokyo Shibaura Denki Kabushiki Kaisha Operational amplifier
GB1592800A (en) * 1977-12-30 1981-07-08 Philips Electronic Associated Linear amplifier
US4188588A (en) * 1978-12-15 1980-02-12 Rca Corporation Circuitry with unbalanced long-tailed-pair connections of FET's
US4315223A (en) * 1979-09-27 1982-02-09 American Microsystems, Inc. CMOS Operational amplifier with improved frequency compensation
US4284959A (en) * 1979-11-13 1981-08-18 Rca Corporation Folded-cascode amplifier arrangement with cascode load means
NL8001120A (nl) * 1980-02-25 1981-09-16 Philips Nv Differentiele belastingsschakeling uitgevoerd met veldeffecttransistoren.
NL8001410A (nl) * 1980-03-10 1981-10-01 Philips Nv Versterkerschakeling.
US4383223A (en) * 1980-04-10 1983-05-10 Motorola, Inc. CMOS Operational amplifier employing push-pull output stage
US4459555A (en) * 1982-01-24 1984-07-10 National Semiconductor Corporation MOS Differential amplifier gain control circuit

Also Published As

Publication number Publication date
IT8322738A0 (it) 1983-09-01
US4538114A (en) 1985-08-27
GB8322913D0 (en) 1983-09-28
JPS5943614A (ja) 1984-03-10
FR2532797B1 (fr) 1990-11-30
GB2126817A (en) 1984-03-28
KR900008753B1 (ko) 1990-11-29
DE3331626A1 (de) 1984-03-08
KR840005946A (ko) 1984-11-19
FR2532797A1 (fr) 1984-03-09

Similar Documents

Publication Publication Date Title
IT1110124B (it) Trasnistore a effetto di campo "mis" con canale di breve lunghezza
IT8324198A0 (it) Amplificatore a coppia di transistor ad effetto di campo accoppiati di porta.
AR200785A1 (es) Amplificador a transistores de efecto de campo complementarios
IT1171670B (it) Amplificatore a transistor a effetto di campo con ampia dinamica
IT1168715B (it) Amplificatore differenziale costituito da transistor ad effetto di campo del tipo metallo-isolante-semiconduttore
IT1058321B (it) Transistore complementare ad effetto di campo
IT8421113A0 (it) Procedimento per fabbricare transistor ad effetto di campo.
FI780552A7 (fi) En knoppartad oevre del till en skidstavs handtag
IT1070009B (it) Transistore ad effetto di campo perfezionato
IT8122671A0 (it) Capacita' ad effetto di campo.
AR203561A1 (es) Amplificadores con transistores de efecto de campo complementarios
IT1088593B (it) Memoria ad accesso casuale,del tipo a transistori ed effeto di campo,a giunzione
IT962927B (it) Transistore ad effetto di campo
IT1021823B (it) Amplificatore a transistor a effetto di campo
DE2424813B2 (de) Transistorbrueckenverstaerker
IT8122547A0 (it) Complesso circuitale comprendente due amplificatori differenziali ad accoppiamento incrociato.
IT1102177B (it) Procedimento di realizzazione di transistori ad effetto di campo di tipo mos e transistori realizzati secondo un tale procedimento
IT1155910B (it) Nastro di cerniera lampo del tipo ermetico
IT7969328A0 (it) Procedimento per la produzione di un transistore ad effetto di campo a semiconduttore metallico
IT7926448A0 (it) Transistore ad effetto di campo aporta isolata.
IT7921188A0 (it) Interruttore a transistor ad effetto di campo ad accoppiamento ottico.
FI792014A7 (fi) Transistorivahvistin orkesterilaitteille.
IT1130764B (it) Transistore ad effetto di campo,del tipo a giunzione
FR2369294A1 (fr) Facteurs fortimicine d et ke et leurs procedes de fabrication
IT7922957A0 (it) Antibiotici del tipo neplanocine.