IT1171402B - Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata - Google Patents

Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata

Info

Publication number
IT1171402B
IT1171402B IT48933/81A IT4893381A IT1171402B IT 1171402 B IT1171402 B IT 1171402B IT 48933/81 A IT48933/81 A IT 48933/81A IT 4893381 A IT4893381 A IT 4893381A IT 1171402 B IT1171402 B IT 1171402B
Authority
IT
Italy
Prior art keywords
metal
field
effect transistor
modified zone
empty
Prior art date
Application number
IT48933/81A
Other languages
English (en)
Other versions
IT8148933A0 (it
IT8148933A1 (it
Inventor
Marina Buiatti
Antonio Cetronio
Original Assignee
Selenia Ind Eletroniche Associ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Selenia Ind Eletroniche Associ filed Critical Selenia Ind Eletroniche Associ
Priority to IT48933/81A priority Critical patent/IT1171402B/it
Publication of IT8148933A0 publication Critical patent/IT8148933A0/it
Priority to DE8282830172T priority patent/DE3280244D1/de
Priority to EP82830172A priority patent/EP0070810B1/en
Priority to US06/399,739 priority patent/US4559238A/en
Publication of IT8148933A1 publication Critical patent/IT8148933A1/it
Application granted granted Critical
Publication of IT1171402B publication Critical patent/IT1171402B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
IT48933/81A 1981-07-20 1981-07-20 Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata IT1171402B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT48933/81A IT1171402B (it) 1981-07-20 1981-07-20 Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata
DE8282830172T DE3280244D1 (de) 1981-07-20 1982-06-15 Verfahren zur herstellung eines feldeffekttransistors mit einer geaenderten verarmungszone verursacht durch eine metallhalbleiter schottky sperre.
EP82830172A EP0070810B1 (en) 1981-07-20 1982-06-15 Method of making a field effect transistor with a modified metal semiconductor schottky barrier depletion region
US06/399,739 US4559238A (en) 1981-07-20 1982-07-19 Method of making a field effect transistor with modified Schottky barrier depletion region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT48933/81A IT1171402B (it) 1981-07-20 1981-07-20 Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata

Publications (3)

Publication Number Publication Date
IT8148933A0 IT8148933A0 (it) 1981-07-20
IT8148933A1 IT8148933A1 (it) 1983-01-20
IT1171402B true IT1171402B (it) 1987-06-10

Family

ID=11269077

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48933/81A IT1171402B (it) 1981-07-20 1981-07-20 Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata

Country Status (4)

Country Link
US (1) US4559238A (it)
EP (1) EP0070810B1 (it)
DE (1) DE3280244D1 (it)
IT (1) IT1171402B (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4694563A (en) * 1981-01-29 1987-09-22 Sumitomo Electric Industries, Ltd. Process for making Schottky-barrier gate FET
JPS6086866A (ja) * 1983-10-19 1985-05-16 Matsushita Electronics Corp 電界効果トランジスタおよびその製造方法
JPS61220376A (ja) * 1985-03-26 1986-09-30 Sumitomo Electric Ind Ltd ショットキゲート電界効果トランジスタの製造方法
US4889817A (en) * 1985-08-08 1989-12-26 Oki Electric Industry Co., Ltd. Method of manufacturing schottky gate field transistor by ion implantation method
US4640003A (en) * 1985-09-30 1987-02-03 The United States Of America As Represented By The Secretary Of The Navy Method of making planar geometry Schottky diode using oblique evaporation and normal incidence proton bombardment
FR2592225B1 (fr) * 1985-12-20 1988-02-05 Thomson Csf Transistor hyperfrequence de puissance
US4706377A (en) * 1986-01-30 1987-11-17 United Technologies Corporation Passivation of gallium arsenide by nitrogen implantation
US4833042A (en) * 1988-01-27 1989-05-23 Rockwell International Corporation Nonalloyed ohmic contacts for n type gallium arsenide
US5138406A (en) * 1989-04-04 1992-08-11 Eaton Corporation Ion implantation masking method and devices
US5030579A (en) * 1989-04-04 1991-07-09 Eaton Corporation Method of making an FET by ion implantation through a partially opaque implant mask
US5011785A (en) * 1990-10-30 1991-04-30 The United States Of America As Represented By The Secretary Of The Navy Insulator assisted self-aligned gate junction
EP0642175B1 (en) * 1993-09-07 2004-04-28 Murata Manufacturing Co., Ltd. Semiconductor element with Schottky electrode and process for producing the same
SE9700156D0 (sv) * 1997-01-21 1997-01-21 Abb Research Ltd Junction termination for Si C Schottky diode
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US20050017244A1 (en) * 2003-07-25 2005-01-27 Randy Hoffman Semiconductor device
US7250627B2 (en) * 2004-03-12 2007-07-31 Hewlett-Packard Development Company, L.P. Semiconductor device
US20110068348A1 (en) * 2009-09-18 2011-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Thin body mosfet with conducting surface channel extensions and gate-controlled channel sidewalls

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4098921A (en) * 1976-04-28 1978-07-04 Cutler-Hammer Tantalum-gallium arsenide schottky barrier semiconductor device
US4056642A (en) * 1976-05-14 1977-11-01 Data General Corporation Method of fabricating metal-semiconductor interfaces
US4172906A (en) * 1977-05-11 1979-10-30 Rockwell International Corporation Method for passivating III-V compound semiconductors
US4170666A (en) * 1977-05-11 1979-10-09 Rockwell International Corporation Method for reducing surface recombination velocities in III-V compound semiconductors
US4244097A (en) * 1979-03-15 1981-01-13 Hughes Aircraft Company Schottky-gate field-effect transistor and fabrication process therefor
FR2460040A1 (fr) * 1979-06-22 1981-01-16 Thomson Csf Procede pour realiser une diode schottky a tenue en tension amelioree
FR2461358A1 (fr) * 1979-07-06 1981-01-30 Thomson Csf Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede
US4426765A (en) * 1981-08-24 1984-01-24 Trw Inc. Process for fabrication of ohmic contacts in compound semiconductor devices

Also Published As

Publication number Publication date
IT8148933A0 (it) 1981-07-20
EP0070810A3 (en) 1986-04-02
IT8148933A1 (it) 1983-01-20
EP0070810A2 (en) 1983-01-26
US4559238A (en) 1985-12-17
DE3280244D1 (de) 1990-10-25
EP0070810B1 (en) 1990-09-19

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