IT1174672B - Apparecchiatura per la lettura e/o la registrazione in memorie mtl - Google Patents

Apparecchiatura per la lettura e/o la registrazione in memorie mtl

Info

Publication number
IT1174672B
IT1174672B IT22604/80A IT2260480A IT1174672B IT 1174672 B IT1174672 B IT 1174672B IT 22604/80 A IT22604/80 A IT 22604/80A IT 2260480 A IT2260480 A IT 2260480A IT 1174672 B IT1174672 B IT 1174672B
Authority
IT
Italy
Prior art keywords
mtl
memories
recording
reading
equipment
Prior art date
Application number
IT22604/80A
Other languages
English (en)
Other versions
IT8022604A0 (it
Inventor
Helmut H Heimeier
Wielfried Klein
Erich Klink
Friedrich C Wernicke
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT8022604A0 publication Critical patent/IT8022604A0/it
Application granted granted Critical
Publication of IT1174672B publication Critical patent/IT1174672B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
IT22604/80A 1979-06-28 1980-06-06 Apparecchiatura per la lettura e/o la registrazione in memorie mtl IT1174672B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2926050A DE2926050C2 (de) 1979-06-28 1979-06-28 Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik

Publications (2)

Publication Number Publication Date
IT8022604A0 IT8022604A0 (it) 1980-06-06
IT1174672B true IT1174672B (it) 1987-07-01

Family

ID=6074350

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22604/80A IT1174672B (it) 1979-06-28 1980-06-06 Apparecchiatura per la lettura e/o la registrazione in memorie mtl

Country Status (5)

Country Link
US (1) US4330853A (it)
EP (1) EP0020995B1 (it)
JP (1) JPS5824875B2 (it)
DE (2) DE2926050C2 (it)
IT (1) IT1174672B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4302823A (en) * 1979-12-27 1981-11-24 International Business Machines Corp. Differential charge sensing system
US4404662A (en) * 1981-07-06 1983-09-13 International Business Machines Corporation Method and circuit for accessing an integrated semiconductor memory
DE3173744D1 (en) * 1981-10-30 1986-03-20 Ibm Deutschland Method for reading a semiconductor memory
US4601016A (en) * 1983-06-24 1986-07-15 Honeywell Inc. Semiconductor memory cell
US4596002A (en) * 1984-06-25 1986-06-17 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4598390A (en) * 1984-06-25 1986-07-01 International Business Machines Corporation Random access memory RAM employing complementary transistor switch (CTS) memory cells
US4578779A (en) * 1984-06-25 1986-03-25 International Business Machines Corporation Voltage mode operation scheme for bipolar arrays
US4752913A (en) * 1986-04-30 1988-06-21 International Business Machines Corporation Random access memory employing complementary transistor switch (CTS) memory cells
EP0246371B1 (en) * 1986-05-22 1991-01-09 International Business Machines Corporation Integrated injection logic output circuit
US4763026A (en) * 1987-04-09 1988-08-09 National Semiconductor Corporation Sense amplifier for single-ended data sensing
US5526319A (en) * 1995-01-31 1996-06-11 International Business Machines Corporation Memory with adiabatically switched bit lines

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541531A (en) * 1967-02-07 1970-11-17 Bell Telephone Labor Inc Semiconductive memory array wherein operating power is supplied via information paths
US3540010A (en) * 1968-08-27 1970-11-10 Bell Telephone Labor Inc Diode-coupled semiconductive memory
US3815106A (en) * 1972-05-11 1974-06-04 S Wiedmann Flip-flop memory cell arrangement
US3668264A (en) * 1969-07-15 1972-06-06 Union Oil Co Production of alkylbenzenes
US3643231A (en) * 1970-04-20 1972-02-15 Ibm Monolithic associative memory cell
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3638039A (en) * 1970-09-18 1972-01-25 Rca Corp Operation of field-effect transistor circuits having substantial distributed capacitance
US3816758A (en) * 1971-04-14 1974-06-11 Ibm Digital logic circuit
US3736574A (en) * 1971-12-30 1973-05-29 Ibm Pseudo-hierarchy memory system
US3786442A (en) * 1972-02-24 1974-01-15 Cogar Corp Rapid recovery circuit for capacitively loaded bit lines
US3816748A (en) * 1972-04-28 1974-06-11 Alpha Ind Inc Ion accelerator employing crossed-field selector
US3786422A (en) * 1973-01-31 1974-01-15 Rel Reeves Inc System for determination of deviations of a vehicle from a prescribed route
DE2309616C2 (de) * 1973-02-27 1982-11-11 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiterspeicherschaltung
US3866531A (en) * 1973-10-12 1975-02-18 Sperry Rand Corp Apparatus for controlling the movement of crop material in a roll forming machine
GB1494481A (en) * 1973-12-21 1977-12-07 Mullard Ltd Electrical circuits comprising master/slave bistable arrangements
FR2304991A1 (fr) * 1975-03-15 1976-10-15 Ibm Agencement de circuits pour memoire semi-conductrice et son procede de fonctionnement
US4021786A (en) * 1975-10-30 1977-05-03 Fairchild Camera And Instrument Corporation Memory cell circuit and semiconductor structure therefore
US4032902A (en) * 1975-10-30 1977-06-28 Fairchild Camera And Instrument Corporation An improved semiconductor memory cell circuit and structure
DE2556833C3 (de) * 1975-12-17 1981-11-05 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Betreiben eines Halbleiterspeichers
JPS53117341A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
US4112511A (en) * 1977-09-13 1978-09-05 Signetics Corporation Four transistor static bipolar memory cell using merged transistors
DE2816949C3 (de) * 1978-04-19 1981-07-16 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung
DE2855866C3 (de) * 1978-12-22 1981-10-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers

Also Published As

Publication number Publication date
JPS5824875B2 (ja) 1983-05-24
DE2926050B1 (de) 1981-01-08
DE2926050C2 (de) 1981-10-01
JPS567291A (en) 1981-01-24
EP0020995A1 (de) 1981-01-07
IT8022604A0 (it) 1980-06-06
DE3063756D1 (en) 1983-07-21
US4330853A (en) 1982-05-18
EP0020995B1 (de) 1983-06-15

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