IT1188609B - Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita - Google Patents

Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita

Info

Publication number: IT1188609B
Authority: IT; Italy
Prior art keywords: transistors; procedure; manufacture; semiconductor devices; low loss
Prior art date: 1986-01-30

Application number

IT19231/86A

Other languages

English (en)

Other versions

IT8619231A0 (it

Inventor

Franco Bertotti

Carlo Cini

Claudio Contiero

Paola Galbiati

Original Assignee

Sgs Microelettronica Spa

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-01-30

Filing date

1986-01-30

Publication date

1988-01-20

1986-01-30 Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa

1986-01-30 Priority to IT19231/86A priority Critical patent/IT1188609B/it

1986-01-30 Publication of IT8619231A0 publication Critical patent/IT8619231A0/it

1987-01-27 Priority to GB8701769A priority patent/GB2186117B/en

1987-01-29 Priority to FR878701076A priority patent/FR2593640B1/fr

1987-01-29 Priority to SE8700351A priority patent/SE502803C2/sv

1987-01-30 Priority to NL8700242A priority patent/NL193918C/nl

1987-01-30 Priority to JP62020353A priority patent/JPS62247558A/ja

1987-01-30 Priority to DE3702810A priority patent/DE3702810C2/de

1988-01-20 Application granted granted Critical

1988-01-20 Publication of IT1188609B publication Critical patent/IT1188609B/it

1988-11-28 Priority to US07/276,890 priority patent/US4887142A/en

Links

230000000295 complement effect Effects 0.000 title 1
238000004519 manufacturing process Methods 0.000 title 1
238000000034 method Methods 0.000 title 1
239000004065 semiconductor Substances 0.000 title 1

IT19231/86A 1986-01-30 1986-01-30 Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita IT1188609B (it)

Priority Applications (8)

Application Number	Priority Date	Filing Date	Title
IT19231/86A IT1188609B (it)	1986-01-30	1986-01-30	Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita
GB8701769A GB2186117B (en)	1986-01-30	1987-01-27	Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
FR878701076A FR2593640B1 (fr)	1986-01-30	1987-01-29	Dispositif semi-conducteur monolithique integre comportant des transistors a jonction bipolaire, des transistors cmos et dmos, des diodes a faible fuite et procede pour sa fabrication
SE8700351A SE502803C2 (sv)	1986-01-30	1987-01-29	Integrerad halvledarkrets innefattande CMOS- och DMOS- transistorer, bipolära skikttransistorer samt diod med lågt läckage.
NL8700242A NL193918C (nl)	1986-01-30	1987-01-30	Werkwijze voor het vervaardigen van een halfgeleiderinrichting bestaande uit CMOS-transistoren, bipolaire verticale transistoren en dioden.
JP62020353A JPS62247558A (ja)	1986-01-30	1987-01-30	バイポ−ラ−接合トランジスタ−、ｃｍｏｓ及びｄｍｏｓトランジスタ−及び漏れの小さいダイオ−ドを含有するモノリチツクに集積された半導体デバイス、及びその製造方法
DE3702810A DE3702810C2 (de)	1986-01-30	1987-01-30	Verfahren zur Herstellung einer Halbleitervorrichtung, die aus CMOS-Transistoren, vertikalen Bipolartransistoren und Dioden besteht
US07/276,890 US4887142A (en)	1986-01-30	1988-11-28	Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
IT19231/86A IT1188609B (it)	1986-01-30	1986-01-30	Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita

Publications (2)

Publication Number	Publication Date
IT8619231A0 IT8619231A0 (it)	1986-01-30
IT1188609B true IT1188609B (it)	1988-01-20

Family

ID=11155973

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT19231/86A IT1188609B (it)	1986-01-30	1986-01-30	Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita

Country Status (2)

Country	Link
JP (1)	JPS62247558A (it)
IT (1)	IT1188609B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2721155B2 (ja) *	1987-02-19	1998-03-04	株式会社東芝	半導体装置
JPH02125462A (ja) *	1988-11-04	1990-05-14	Fuji Electric Co Ltd	半導体集積回路装置及びその製造方法
US5374569A (en) *	1992-09-21	1994-12-20	Siliconix Incorporated	Method for forming a BiCDMOS

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4325180A (en) *	1979-02-15	1982-04-20	Texas Instruments Incorporated	Process for monolithic integration of logic, control, and high voltage interface circuitry
JPS5944782B2 (ja) *	1980-01-31	1984-11-01	日本電信電話株式会社	半導体集積回路
JPS6072255A (ja) *	1983-09-28	1985-04-24	Toshiba Corp	半導体集積回路装置およびその製造方法
JPS60249366A (ja) *	1984-05-25	1985-12-10	Hitachi Ltd	半導体装置

1986
- 1986-01-30 IT IT19231/86A patent/IT1188609B/it active
1987
- 1987-01-30 JP JP62020353A patent/JPS62247558A/ja active Pending

Also Published As

Publication number	Publication date
JPS62247558A (ja)	1987-10-28
IT8619231A0 (it)	1986-01-30

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Legal Events

Date	Code	Title	Description
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19960129