IT1192785B - Procedimento per la produzione di un transistore ad effetto di campo a semiconduttore metallico - Google Patents
Procedimento per la produzione di un transistore ad effetto di campo a semiconduttore metallicoInfo
- Publication number
- IT1192785B IT1192785B IT69328/79A IT6932879A IT1192785B IT 1192785 B IT1192785 B IT 1192785B IT 69328/79 A IT69328/79 A IT 69328/79A IT 6932879 A IT6932879 A IT 6932879A IT 1192785 B IT1192785 B IT 1192785B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- production
- semiconductor field
- metal semiconductor
- field transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/966,182 US4277882A (en) | 1978-12-04 | 1978-12-04 | Method of producing a metal-semiconductor field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7969328A0 IT7969328A0 (it) | 1979-12-03 |
| IT1192785B true IT1192785B (it) | 1988-05-04 |
Family
ID=25511023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT69328/79A IT1192785B (it) | 1978-12-04 | 1979-12-03 | Procedimento per la produzione di un transistore ad effetto di campo a semiconduttore metallico |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4277882A (it) |
| JP (1) | JPS5578577A (it) |
| CA (1) | CA1124408A (it) |
| DE (1) | DE2947695A1 (it) |
| FR (1) | FR2443744A1 (it) |
| GB (1) | GB2037073B (it) |
| IT (1) | IT1192785B (it) |
| NL (1) | NL7908091A (it) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4357178A (en) * | 1978-12-20 | 1982-11-02 | Ibm Corporation | Schottky barrier diode with controlled characteristics and fabrication method |
| JPS5824018B2 (ja) * | 1979-12-21 | 1983-05-18 | 富士通株式会社 | バイポ−ラｉｃの製造方法 |
| US4388121A (en) * | 1980-03-21 | 1983-06-14 | Texas Instruments Incorporated | Reduced field implant for dynamic memory cell array |
| GB2084794B (en) * | 1980-10-03 | 1984-07-25 | Philips Electronic Associated | Methods of manufacturing insulated gate field effect transistors |
| US4466174A (en) * | 1981-12-28 | 1984-08-21 | Texas Instruments Incorporated | Method for fabricating MESFET device using a double LOCOS process |
| JPS6086866A (ja) * | 1983-10-19 | 1985-05-16 | Matsushita Electronics Corp | 電界効果トランジスタおよびその製造方法 |
| US4697198A (en) * | 1984-08-22 | 1987-09-29 | Hitachi, Ltd. | MOSFET which reduces the short-channel effect |
| US4748134A (en) * | 1987-05-26 | 1988-05-31 | Motorola, Inc. | Isolation process for semiconductor devices |
| US5348910A (en) * | 1991-12-24 | 1994-09-20 | Seiko Epson Corporation | Method of manufacturing a semiconductor device and the product thereby |
| US5358890A (en) * | 1993-04-19 | 1994-10-25 | Motorola Inc. | Process for fabricating isolation regions in a semiconductor device |
| KR0161474B1 (ko) * | 1995-12-15 | 1999-02-01 | 김광호 | 셀 플러그 이온주입을 이용한 반도체 메모리장치의 제조방법 |
| US5926707A (en) * | 1995-12-15 | 1999-07-20 | Samsung Electronics Co., Ltd. | Methods for forming integrated circuit memory devices having deep storage electrode contact regions therein for improving refresh characteristics |
| US5981324A (en) * | 1996-10-23 | 1999-11-09 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuits having memory cell arrays and peripheral circuits therein |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL164424C (nl) * | 1970-06-04 | 1980-12-15 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag. |
| US3921283A (en) * | 1971-06-08 | 1975-11-25 | Philips Corp | Semiconductor device and method of manufacturing the device |
| NL160988C (nl) * | 1971-06-08 | 1979-12-17 | Philips Nv | Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting. |
| FR2280203A1 (fr) * | 1974-07-26 | 1976-02-20 | Thomson Csf | Procede d'ajustement de tension de seuil de transistors a effet de champ |
| US3912546A (en) * | 1974-12-06 | 1975-10-14 | Hughes Aircraft Co | Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor |
| DE2554450A1 (de) * | 1975-12-03 | 1977-06-16 | Siemens Ag | Verfahren zur herstellung einer integrierten schaltung |
| FR2351502A1 (fr) * | 1976-05-14 | 1977-12-09 | Ibm | Procede de fabrication de transistors a effet de champ a porte en silicium polycristallin auto-alignee avec les regions source et drain ainsi qu'avec les regions d'isolation de champ encastrees |
| JPS52156580A (en) * | 1976-06-23 | 1977-12-27 | Hitachi Ltd | Semiconductor integrated circuit device and its production |
| US4149177A (en) * | 1976-09-03 | 1979-04-10 | Fairchild Camera And Instrument Corporation | Method of fabricating conductive buried regions in integrated circuits and the resulting structures |
-
1978
- 1978-12-04 US US05/966,182 patent/US4277882A/en not_active Expired - Lifetime
-
1979
- 1979-10-30 GB GB7937512A patent/GB2037073B/en not_active Expired
- 1979-11-05 NL NL7908091A patent/NL7908091A/nl not_active Application Discontinuation
- 1979-11-26 JP JP15214179A patent/JPS5578577A/ja active Pending
- 1979-11-27 DE DE19792947695 patent/DE2947695A1/de not_active Withdrawn
- 1979-11-30 FR FR7929551A patent/FR2443744A1/fr active Granted
- 1979-12-03 IT IT69328/79A patent/IT1192785B/it active
- 1979-12-03 CA CA341,114A patent/CA1124408A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2037073B (en) | 1983-04-13 |
| DE2947695A1 (de) | 1980-06-19 |
| IT7969328A0 (it) | 1979-12-03 |
| FR2443744A1 (fr) | 1980-07-04 |
| FR2443744B1 (it) | 1983-09-30 |
| CA1124408A (en) | 1982-05-25 |
| GB2037073A (en) | 1980-07-02 |
| US4277882A (en) | 1981-07-14 |
| JPS5578577A (en) | 1980-06-13 |
| NL7908091A (nl) | 1980-06-06 |
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