IT1201840B - Procedimento per realizzare contatti ohmici metallo-semiconduttore - Google Patents

Procedimento per realizzare contatti ohmici metallo-semiconduttore

Info

Publication number
IT1201840B
IT1201840B IT83638/86A IT8363886A IT1201840B IT 1201840 B IT1201840 B IT 1201840B IT 83638/86 A IT83638/86 A IT 83638/86A IT 8363886 A IT8363886 A IT 8363886A IT 1201840 B IT1201840 B IT 1201840B
Authority
IT
Italy
Prior art keywords
procedure
ohmic contacts
semiconductor ohmic
semiconductor
contacts
Prior art date
Application number
IT83638/86A
Other languages
English (en)
Other versions
IT8683638A0 (it
Inventor
Fabio Gualandris
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT83638/86A priority Critical patent/IT1201840B/it
Publication of IT8683638A0 publication Critical patent/IT8683638A0/it
Priority to DE8787830297T priority patent/DE3762938D1/de
Priority to EP87830297A priority patent/EP0260232B1/en
Application granted granted Critical
Publication of IT1201840B publication Critical patent/IT1201840B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
IT83638/86A 1986-08-28 1986-08-28 Procedimento per realizzare contatti ohmici metallo-semiconduttore IT1201840B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT83638/86A IT1201840B (it) 1986-08-28 1986-08-28 Procedimento per realizzare contatti ohmici metallo-semiconduttore
DE8787830297T DE3762938D1 (de) 1986-08-28 1987-07-30 Verfahren zur herstellung ohmischen metallhalbleiterkontakten.
EP87830297A EP0260232B1 (en) 1986-08-28 1987-07-30 Process for making metal-semiconductor ohmic contacts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT83638/86A IT1201840B (it) 1986-08-28 1986-08-28 Procedimento per realizzare contatti ohmici metallo-semiconduttore

Publications (2)

Publication Number Publication Date
IT8683638A0 IT8683638A0 (it) 1986-08-28
IT1201840B true IT1201840B (it) 1989-02-02

Family

ID=11323514

Family Applications (1)

Application Number Title Priority Date Filing Date
IT83638/86A IT1201840B (it) 1986-08-28 1986-08-28 Procedimento per realizzare contatti ohmici metallo-semiconduttore

Country Status (3)

Country Link
EP (1) EP0260232B1 (it)
DE (1) DE3762938D1 (it)
IT (1) IT1201840B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229311A (en) * 1989-03-22 1993-07-20 Intel Corporation Method of reducing hot-electron degradation in semiconductor devices
GB2229575B (en) * 1989-03-22 1993-05-12 Intel Corp Method of reducing hot-electron degradation in semiconductor devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516145A (en) * 1983-08-31 1985-05-07 Storage Technology Partners Reduction of contact resistance in CMOS integrated circuit chips and the product thereof
GB2168841B (en) * 1984-12-22 1988-07-20 Stc Plc Semiconductor processing
IT1200785B (it) * 1985-10-14 1989-01-27 Sgs Microelettronica Spa Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico

Also Published As

Publication number Publication date
EP0260232B1 (en) 1990-05-23
IT8683638A0 (it) 1986-08-28
EP0260232A3 (en) 1988-11-30
DE3762938D1 (de) 1990-06-28
EP0260232A2 (en) 1988-03-16

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970829