IT1200785B - Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico - Google Patents

Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico

Info

Publication number: IT1200785B
Authority: IT; Italy
Prior art keywords: rie; ohmic metal; make ohmic; improved plasma; semiconductor contacts
Prior art date: 1985-10-14

Application number

IT22468/85A

Other languages

English (en)

Other versions

IT8522468A0 (it

Inventor

Fabio Gualandris

Original Assignee

Sgs Microelettronica Spa

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-10-14

Filing date

1985-10-14

Publication date

1989-01-27

1985-10-14 Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa

1985-10-14 Priority to IT22468/85A priority Critical patent/IT1200785B/it

1985-10-14 Publication of IT8522468A0 publication Critical patent/IT8522468A0/it

1986-09-15 Priority to EP86830254A priority patent/EP0219465B1/en

1986-09-15 Priority to DE8686830254T priority patent/DE3681112D1/de

1986-09-15 Priority to US06/907,342 priority patent/US4806199A/en

1986-10-14 Priority to JP61245142A priority patent/JPH0821575B2/ja

1989-01-27 Application granted granted Critical

1989-01-27 Publication of IT1200785B publication Critical patent/IT1200785B/it

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
- H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes

IT22468/85A 1985-10-14 1985-10-14 Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico IT1200785B (it)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
IT22468/85A IT1200785B (it)	1985-10-14	1985-10-14	Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico
EP86830254A EP0219465B1 (en)	1985-10-14	1986-09-15	Improved (rie) plasma etch process for making metal-semiconductor ohmic type contacts
DE8686830254T DE3681112D1 (de)	1985-10-14	1986-09-15	Plasmaaetzverfahren zur herstellung von metall-halbleiter-kontakte des ohmischen typs.
US06/907,342 US4806199A (en)	1985-10-14	1986-09-15	(RIE) Plasma process for making metal-semiconductor ohmic type contacts
JP61245142A JPH0821575B2 (ja)	1985-10-14	1986-10-14	金属と半導体間にオ−ム型接触を形成するための改良されたｒｉｅプラズマエツチング法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
IT22468/85A IT1200785B (it)	1985-10-14	1985-10-14	Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico

Publications (2)

Publication Number	Publication Date
IT8522468A0 IT8522468A0 (it)	1985-10-14
IT1200785B true IT1200785B (it)	1989-01-27

Family

ID=11196692

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT22468/85A IT1200785B (it)	1985-10-14	1985-10-14	Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico

Country Status (5)

Country	Link
US (1)	US4806199A (it)
EP (1)	EP0219465B1 (it)
JP (1)	JPH0821575B2 (it)
DE (1)	DE3681112D1 (it)
IT (1)	IT1200785B (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
IT1201840B (it) *	1986-08-28	1989-02-02	Sgs Microelettronica Spa	Procedimento per realizzare contatti ohmici metallo-semiconduttore
JPH0770523B2 (ja) *	1987-05-19	1995-07-31	日本電気株式会社	半導体装置の製造方法
KR910008983B1 (ko) *	1988-12-20	1991-10-26	현대전자산업 주식회사	비등방성 식각을 이용한 잔유물 제거방법
US5034091A (en) *	1990-04-27	1991-07-23	Hughes Aircraft Company	Method of forming an electrical via structure
JP3185150B2 (ja) *	1991-03-15	2001-07-09	日本テキサス・インスツルメンツ株式会社	半導体装置の製造方法
JP2997142B2 (ja)	1992-01-24	2000-01-11	アプライドマテリアルズインコーポレイテッド	集積回路構造の選択性の高い酸化物エッチングプロセス
US5312717A (en) *	1992-09-24	1994-05-17	International Business Machines Corporation	Residue free vertical pattern transfer with top surface imaging resists
DE4339465C2 (de) *	1993-11-19	1997-05-28	Gold Star Electronics	Verfahren zur Behandlung der Oberfläche eines einer Trockenätzung ausgesetzten Siliciumsubstrats
US5750441A (en)	1996-05-20	1998-05-12	Micron Technology, Inc.	Mask having a tapered profile used during the formation of a semiconductor device
US5893757A (en) *	1997-01-13	1999-04-13	Applied Komatsu Technology, Inc.	Tapered profile etching method
US6875371B1 (en)	1998-06-22	2005-04-05	Micron Technology, Inc.	Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby
US6117791A (en) *	1998-06-22	2000-09-12	Micron Technology, Inc.	Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby
US7173339B1 (en)	1998-06-22	2007-02-06	Micron Technology, Inc.	Semiconductor device having a substrate an undoped silicon oxide structure and an overlaying doped silicon oxide structure with a sidewall terminating at the undoped silicon oxide structure
US6281142B1 (en) *	1999-06-04	2001-08-28	Micron Technology, Inc.	Dielectric cure for reducing oxygen vacancies
JP4896367B2 (ja) *	2003-10-23	2012-03-14	パナソニック株式会社	電子部品の処理方法及び装置
WO2013092759A2 (en) *	2011-12-21	2013-06-27	Solvay Sa	Method for etching of sio2 layers on thin wafers
CN103779271B (zh) *	2012-10-26	2017-04-05	中微半导体设备(上海)有限公司	一种倒锥形轮廓刻蚀方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4268374A (en) *	1979-08-09	1981-05-19	Bell Telephone Laboratories, Incorporated	High capacity sputter-etching apparatus
US4349409A (en) *	1980-05-12	1982-09-14	Fujitsu Limited	Method and apparatus for plasma etching
JPS56158873A (en) *	1980-05-14	1981-12-07	Hitachi Ltd	Dry etching method
DE3103177A1 (de) *	1981-01-30	1982-08-26	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum herstellen von polysiliziumstrukturen bis in den 1 (my)m-bereich auf integrierte halbleiterschaltungen enthaltenden substraten durch plasmaaetzen
US4599243A (en) *	1982-12-23	1986-07-08	International Business Machines Corporation	Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4534826A (en) *	1983-12-29	1985-08-13	Ibm Corporation	Trench etch process for dielectric isolation
US4484979A (en) *	1984-04-16	1984-11-27	At&T Bell Laboratories	Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer
US4528066A (en) *	1984-07-06	1985-07-09	Ibm Corporation	Selective anisotropic reactive ion etching process for polysilicide composite structures
US4582581A (en) *	1985-05-09	1986-04-15	Allied Corporation	Boron trifluoride system for plasma etching of silicon dioxide
US4631248A (en) *	1985-06-21	1986-12-23	Lsi Logic Corporation	Method for forming an electrical contact in an integrated circuit
US4687543A (en) *	1986-02-21	1987-08-18	Tegal Corporation	Selective plasma etching during formation of integrated circuitry

1985
- 1985-10-14 IT IT22468/85A patent/IT1200785B/it active
1986
- 1986-09-15 US US06/907,342 patent/US4806199A/en not_active Expired - Lifetime
- 1986-09-15 DE DE8686830254T patent/DE3681112D1/de not_active Expired - Lifetime
- 1986-09-15 EP EP86830254A patent/EP0219465B1/en not_active Expired
- 1986-10-14 JP JP61245142A patent/JPH0821575B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE3681112D1 (de)	1991-10-02
IT8522468A0 (it)	1985-10-14
EP0219465A2 (en)	1987-04-22
EP0219465A3 (en)	1988-03-30
EP0219465B1 (en)	1991-08-28
JPS6289333A (ja)	1987-04-23
US4806199A (en)	1989-02-21
JPH0821575B2 (ja)	1996-03-04

Legal Events

Date	Code	Title	Description
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19971030

Publication	Publication Date	Title
IT1200785B (it)	1989-01-27	Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico
IT1189498B (it)	1988-02-04	Interruttore bipolare con protezione di terra
IT1218191B (it)	1990-04-12	Dispositivo di rilevamento di corrente elettrica
DE3788791D1 (de)	1994-02-24	Elektrisch leitendes Einwegerdungsband.
DK452187D0 (da)	1987-08-28	Elektrisk kontakteringsapparat med kontaktbeskyttelsesorgan
NO863663D0 (no)	1986-09-12	Elektrisk ledende undervannskopling.
IT1188458B (it)	1988-01-14	Interruttore elettrico di sicurezza
DK280886D0 (da)	1986-06-16	Dobbeltvirkende elektrisk kontaktor for store stroemstyrker
DK446887A (da)	1988-03-20	Elektrisk kontakteringsapparat med kontaktbeskyttelsesorgan
DE68918626D1 (de)	1994-11-10	Zusammenbau zur Stabilisierung von elektrischen Kontakten.
DK32387D0 (da)	1987-01-21	Staerkstroemsterminal
IT1185964B (it)	1987-11-18	Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico
ATA186986A (de)	1995-09-15	Lasttrennschalter
GB2176947B (en)	1989-01-05	Improvements in or relating to electrically conductive members
IT8667753A0 (it)	1986-10-03	Connettore elettrico di sicurezza
IT1235253B (it)	1992-06-26	Dispositivo per spelare conduttori elettrici.
IT1201840B (it)	1989-02-02	Procedimento per realizzare contatti ohmici metallo-semiconduttore
DK291987A (da)	1987-12-10	Elektrode til elektrokemisk element
IT1204939B (it)	1989-03-10	Interruttore limitatore di corrente
FI864269L (fi)	1987-04-24	Elektrisk avbrytarkontakt.
IT8521053V0 (it)	1985-03-08	Struttura di interruttore elettrico per impianti elettrici in genere.
MX159509A (es)	1989-06-26	Mejoras en interruptor electrico
KR870008156U (ko)	1987-06-10	전기식 소형 자동리퍼(ripper)
BR6501898U (pt)	1986-06-17	Disposicao construtiva em isolador aplicado em pinca bipolar
BR6500030U (pt)	1986-08-19	Chave seccionadora