IT1202311B - Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante - Google Patents

Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante

Info

Publication number
IT1202311B
IT1202311B IT06628/85A IT662885A IT1202311B IT 1202311 B IT1202311 B IT 1202311B IT 06628/85 A IT06628/85 A IT 06628/85A IT 662885 A IT662885 A IT 662885A IT 1202311 B IT1202311 B IT 1202311B
Authority
IT
Italy
Prior art keywords
passivating
termination
self
semiconductor device
flat junction
Prior art date
Application number
IT06628/85A
Other languages
English (en)
Other versions
IT8506628A0 (it
Inventor
Luciano Gandolfi
Salvatore Musumeci
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT06628/85A priority Critical patent/IT1202311B/it
Publication of IT8506628A0 publication Critical patent/IT8506628A0/it
Priority to EP86117144A priority patent/EP0232510B1/en
Priority to DE8686117144T priority patent/DE3684591D1/de
Priority to US06/941,622 priority patent/US4805004A/en
Priority to JP61293560A priority patent/JPS62189754A/ja
Application granted granted Critical
Publication of IT1202311B publication Critical patent/IT1202311B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
IT06628/85A 1985-12-11 1985-12-11 Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante IT1202311B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT06628/85A IT1202311B (it) 1985-12-11 1985-12-11 Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
EP86117144A EP0232510B1 (en) 1985-12-11 1986-12-09 Semiconductor device having a plane junction with autopassivating termination
DE8686117144T DE3684591D1 (de) 1985-12-11 1986-12-09 Halbleiteranordnung mit flachem uebergang mit autopassiviertem rand.
US06/941,622 US4805004A (en) 1985-12-11 1986-12-11 Semiconductor device with a planar junction and self-passivating termination
JP61293560A JPS62189754A (ja) 1985-12-11 1986-12-11 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT06628/85A IT1202311B (it) 1985-12-11 1985-12-11 Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante

Publications (2)

Publication Number Publication Date
IT8506628A0 IT8506628A0 (it) 1985-12-11
IT1202311B true IT1202311B (it) 1989-02-02

Family

ID=11121599

Family Applications (1)

Application Number Title Priority Date Filing Date
IT06628/85A IT1202311B (it) 1985-12-11 1985-12-11 Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante

Country Status (5)

Country Link
US (1) US4805004A (it)
EP (1) EP0232510B1 (it)
JP (1) JPS62189754A (it)
DE (1) DE3684591D1 (it)
IT (1) IT1202311B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
US5223919A (en) * 1987-02-25 1993-06-29 U. S. Philips Corp. Photosensitive device suitable for high voltage operation
EP0311816A1 (de) * 1987-10-15 1989-04-19 BBC Brown Boveri AG Halbleiterbauelement und Verfahren zu dessen Herstellung
DE58907758D1 (de) * 1988-09-20 1994-07-07 Siemens Ag Planarer pn-Übergang hoher Spannungsfestigkeit.
FR2650122B1 (fr) * 1989-07-21 1991-11-08 Motorola Semiconducteurs Dispositif semi-conducteur a haute tension et son procede de fabrication
JP2523896Y2 (ja) * 1989-11-08 1997-01-29 能美防災株式会社 防水型火災感知器及びそのパッキン
US5124271A (en) * 1990-06-20 1992-06-23 Texas Instruments Incorporated Process for fabricating a BiCMOS integrated circuit
DE4119904A1 (de) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh Halbleiteranordnung
EP0604163B1 (en) * 1992-12-21 1999-03-24 STMicroelectronics, Inc. PN junction diode structure
DE69324003T2 (de) * 1993-06-28 1999-07-15 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung
DE69940627D1 (de) * 1998-02-09 2009-05-07 Nxp Bv Halbleiteranordnung mit einem bipolartransistor und verfahren zur herstellung
GB9804177D0 (en) * 1998-02-28 1998-04-22 Philips Electronics Nv Semiconductor switch devices and their manufacture
JP4736180B2 (ja) * 2000-11-29 2011-07-27 株式会社デンソー 半導体装置およびその製造方法
FR2828767B1 (fr) * 2001-08-14 2003-12-12 Thales Sa Transistor bipolaire a tension de claquage elevee
US7560787B2 (en) * 2005-12-22 2009-07-14 Fairchild Semiconductor Corporation Trench field plate termination for power devices
DE102006055885B4 (de) 2006-11-27 2018-02-15 Infineon Technologies Austria Ag Verfahren zum Dotieren eines Halbleiterkörpers
DE102007001108B4 (de) * 2007-01-04 2012-03-22 Infineon Technologies Ag Diode und Verfahren zu ihrer Herstellung
US7800196B2 (en) * 2008-09-30 2010-09-21 Northrop Grumman Systems Corporation Semiconductor structure with an electric field stop layer for improved edge termination capability
US8872278B2 (en) 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
EP4333069A1 (en) * 2022-08-31 2024-03-06 Nexperia B.V. Vertical semiconuctor device and manufacuting method therefor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2173729B1 (it) * 1972-02-29 1977-07-15 Radiotechnique Compelec
JPS50137478A (it) * 1974-04-18 1975-10-31
US4165516A (en) * 1975-04-28 1979-08-21 U.S. Philips Corporation Semiconductor device and method of manufacturing same
JPS5230176A (en) * 1975-09-02 1977-03-07 Matsushita Electronics Corp Manufacturing system of npn-transistor
JPS5356972A (en) * 1976-11-01 1978-05-23 Mitsubishi Electric Corp Mesa type semiconductor device
US4374389A (en) * 1978-06-06 1983-02-15 General Electric Company High breakdown voltage semiconductor device
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
FR2557367B1 (fr) * 1983-12-23 1986-12-05 Thomson Csf Structure semiconductrice a tenue en tension elevee avec sillon peripherique implante et son procede de fabrication
US4605948A (en) * 1984-08-02 1986-08-12 Rca Corporation Semiconductor structure for electric field distribution

Also Published As

Publication number Publication date
EP0232510A3 (en) 1988-01-20
EP0232510B1 (en) 1992-03-25
US4805004A (en) 1989-02-14
DE3684591D1 (de) 1992-04-30
EP0232510A2 (en) 1987-08-19
IT8506628A0 (it) 1985-12-11
JPS62189754A (ja) 1987-08-19

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227