IT1213229B - Cella di memoria non volatile di tipo merged con gate flottante sovrapposta alla gate di controllo e selezione. - Google Patents

Cella di memoria non volatile di tipo merged con gate flottante sovrapposta alla gate di controllo e selezione.

Info

Publication number
IT1213229B
IT1213229B IT8423282A IT2328284A IT1213229B IT 1213229 B IT1213229 B IT 1213229B IT 8423282 A IT8423282 A IT 8423282A IT 2328284 A IT2328284 A IT 2328284A IT 1213229 B IT1213229 B IT 1213229B
Authority
IT
Italy
Prior art keywords
memory cell
volatile memory
control
overlapping
floating gate
Prior art date
Application number
IT8423282A
Other languages
English (en)
Other versions
IT8423282A0 (it
Inventor
Andrea Ravaglia
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT8423282A priority Critical patent/IT1213229B/it
Publication of IT8423282A0 publication Critical patent/IT8423282A0/it
Priority to GB08524040A priority patent/GB2165991A/en
Priority to NL8502732A priority patent/NL8502732A/nl
Priority to DE19853537037 priority patent/DE3537037A1/de
Priority to JP60234660A priority patent/JPS61101079A/ja
Priority to FR858515759A priority patent/FR2572211B1/fr
Application granted granted Critical
Publication of IT1213229B publication Critical patent/IT1213229B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
IT8423282A 1984-10-23 1984-10-23 Cella di memoria non volatile di tipo merged con gate flottante sovrapposta alla gate di controllo e selezione. IT1213229B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT8423282A IT1213229B (it) 1984-10-23 1984-10-23 Cella di memoria non volatile di tipo merged con gate flottante sovrapposta alla gate di controllo e selezione.
GB08524040A GB2165991A (en) 1984-10-23 1985-09-30 Merged nonvolatile memory cell with floating gate superimposed on the control and selection gate
NL8502732A NL8502732A (nl) 1984-10-23 1985-10-07 Niet-vluchtige versmolten geheugencel met zwevende poort, gesuperponeerd op de besturings- en kiespoort.
DE19853537037 DE3537037A1 (de) 1984-10-23 1985-10-17 Fusionierte nichtfluechtige speicherzelle
JP60234660A JPS61101079A (ja) 1984-10-23 1985-10-22 制御および選択ゲートの上に浮動ゲートを重合した併合型不揮発性メモリセル
FR858515759A FR2572211B1 (fr) 1984-10-23 1985-10-23 Cellule de memoire permanente du type " merged " (fusionne) a grille flottante superposee a la grille de commande et de selection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8423282A IT1213229B (it) 1984-10-23 1984-10-23 Cella di memoria non volatile di tipo merged con gate flottante sovrapposta alla gate di controllo e selezione.

Publications (2)

Publication Number Publication Date
IT8423282A0 IT8423282A0 (it) 1984-10-23
IT1213229B true IT1213229B (it) 1989-12-14

Family

ID=11205624

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8423282A IT1213229B (it) 1984-10-23 1984-10-23 Cella di memoria non volatile di tipo merged con gate flottante sovrapposta alla gate di controllo e selezione.

Country Status (6)

Country Link
JP (1) JPS61101079A (it)
DE (1) DE3537037A1 (it)
FR (1) FR2572211B1 (it)
GB (1) GB2165991A (it)
IT (1) IT1213229B (it)
NL (1) NL8502732A (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057886A (en) * 1988-12-21 1991-10-15 Texas Instruments Incorporated Non-volatile memory with improved coupling between gates
DE4020007C2 (de) * 1989-06-22 1994-09-29 Nippon Telegraph & Telephone Nichtflüchtiger Speicher
TW480715B (en) * 2001-03-06 2002-03-21 Macronix Int Co Ltd Nonvolatile memory structure capable of increasing gate coupling-coefficient

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263684A (en) * 1975-11-20 1977-05-26 Toshiba Corp Non-volatile semiconductor memory device
CA1119299A (en) * 1979-02-05 1982-03-02 Abd-El-Fattah A. Ibrahim Inverse floating gate semiconductor devices
US4336603A (en) * 1980-06-18 1982-06-22 International Business Machines Corp. Three terminal electrically erasable programmable read only memory
JPS5776878A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Semiconductor memory device
GB2117177B (en) * 1982-03-09 1985-11-27 Rca Corp An electrically alterable, nonvolatile floating gate memory device
GB2116367B (en) * 1982-03-09 1985-10-02 Rca Corp An electrically alterable, nonvolatile floating gate memory device
DE3334296T1 (de) * 1982-03-09 1984-05-03 Rca Corp., New York, N.Y. Schwebe-Gate-Speicher
JPS59105371A (ja) * 1982-12-08 1984-06-18 Hitachi Ltd 不揮撥性半導体装置

Also Published As

Publication number Publication date
DE3537037A1 (de) 1986-04-24
NL8502732A (nl) 1986-05-16
FR2572211B1 (fr) 1991-09-13
FR2572211A1 (fr) 1986-04-25
JPS61101079A (ja) 1986-05-19
GB8524040D0 (en) 1985-11-06
GB2165991A (en) 1986-04-23
IT8423282A0 (it) 1984-10-23

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