IT1213231B - Dispositivo elettronico integrato a tensione costante stabilizzata, eprocedimento per la sua fabbricazione. - Google Patents

Dispositivo elettronico integrato a tensione costante stabilizzata, eprocedimento per la sua fabbricazione.

Info

Publication number
IT1213231B
IT1213231B IT8423299A IT2329984A IT1213231B IT 1213231 B IT1213231 B IT 1213231B IT 8423299 A IT8423299 A IT 8423299A IT 2329984 A IT2329984 A IT 2329984A IT 1213231 B IT1213231 B IT 1213231B
Authority
IT
Italy
Prior art keywords
procedure
manufacture
electronic device
constant voltage
integrated electronic
Prior art date
Application number
IT8423299A
Other languages
English (en)
Other versions
IT8423299A0 (it
Inventor
Franco Bertotti
Sandro Storti
Flavio Villa
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT8423299A priority Critical patent/IT1213231B/it
Publication of IT8423299A0 publication Critical patent/IT8423299A0/it
Priority to GB08525752A priority patent/GB2166291B/en
Priority to FR8515682A priority patent/FR2572586B1/fr
Priority to DE19853537688 priority patent/DE3537688A1/de
Application granted granted Critical
Publication of IT1213231B publication Critical patent/IT1213231B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
IT8423299A 1984-10-25 1984-10-25 Dispositivo elettronico integrato a tensione costante stabilizzata, eprocedimento per la sua fabbricazione. IT1213231B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT8423299A IT1213231B (it) 1984-10-25 1984-10-25 Dispositivo elettronico integrato a tensione costante stabilizzata, eprocedimento per la sua fabbricazione.
GB08525752A GB2166291B (en) 1984-10-25 1985-10-18 Stabilized constant voltage integrated electronic device, and method for the manufacture thereof
FR8515682A FR2572586B1 (fr) 1984-10-25 1985-10-22 Dispositif electronique integre a tension constante stabilisee, et procede pour sa fabrication
DE19853537688 DE3537688A1 (de) 1984-10-25 1985-10-23 Integrierte konstantspannungsquelle sowie verfahren zu deren herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8423299A IT1213231B (it) 1984-10-25 1984-10-25 Dispositivo elettronico integrato a tensione costante stabilizzata, eprocedimento per la sua fabbricazione.

Publications (2)

Publication Number Publication Date
IT8423299A0 IT8423299A0 (it) 1984-10-25
IT1213231B true IT1213231B (it) 1989-12-14

Family

ID=11205832

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8423299A IT1213231B (it) 1984-10-25 1984-10-25 Dispositivo elettronico integrato a tensione costante stabilizzata, eprocedimento per la sua fabbricazione.

Country Status (4)

Country Link
DE (1) DE3537688A1 (it)
FR (1) FR2572586B1 (it)
GB (1) GB2166291B (it)
IT (1) IT1213231B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
JPH06163907A (ja) * 1992-11-20 1994-06-10 Hitachi Ltd 電圧駆動型半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631313A (en) * 1969-11-06 1971-12-28 Intel Corp Resistor for integrated circuit

Also Published As

Publication number Publication date
GB2166291A (en) 1986-04-30
FR2572586B1 (fr) 1987-06-26
FR2572586A1 (fr) 1986-05-02
IT8423299A0 (it) 1984-10-25
GB2166291B (en) 1988-02-03
DE3537688A1 (de) 1986-04-30
GB8525752D0 (en) 1985-11-20

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