IT1218471B - Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato - Google Patents

Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato

Info

Publication number
IT1218471B
IT1218471B IT20640/85A IT2064085A IT1218471B IT 1218471 B IT1218471 B IT 1218471B IT 20640/85 A IT20640/85 A IT 20640/85A IT 2064085 A IT2064085 A IT 2064085A IT 1218471 B IT1218471 B IT 1218471B
Authority
IT
Italy
Prior art keywords
collector
substrate
integrated circuit
circuit including
including vertical
Prior art date
Application number
IT20640/85A
Other languages
English (en)
Other versions
IT8520640A0 (it
Inventor
Mastromatteo Ubaldo
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT20640/85A priority Critical patent/IT1218471B/it
Publication of IT8520640A0 publication Critical patent/IT8520640A0/it
Priority to NL8601107A priority patent/NL8601107A/nl
Priority to FR868606607A priority patent/FR2581796B1/fr
Priority to SE8602088A priority patent/SE8602088L/
Priority to GB8611203A priority patent/GB2175138B/en
Priority to JP61105016A priority patent/JPS61260666A/ja
Application granted granted Critical
Publication of IT1218471B publication Critical patent/IT1218471B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
IT20640/85A 1985-05-09 1985-05-09 Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato IT1218471B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT20640/85A IT1218471B (it) 1985-05-09 1985-05-09 Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato
NL8601107A NL8601107A (nl) 1985-05-09 1986-04-29 Bipolair geintegreerde schakeling bevattende verticale p-n-p transistors met hun collectors op het substraat.
FR868606607A FR2581796B1 (fr) 1985-05-09 1986-05-07 Circuit integre bipolaire comprenant des transistors pnp verticaux avec collecteur sur le substrat, et procede pour la realisation d'un tel circuit
SE8602088A SE8602088L (sv) 1985-05-09 1986-05-07 Bipoler integrerad krets, innefattande vertikala pnp-transistorer, som har sina kollektorer pa substratet
GB8611203A GB2175138B (en) 1985-05-09 1986-05-08 Bipolar integrated circuits
JP61105016A JPS61260666A (ja) 1985-05-09 1986-05-09 バイポ−ラ集積回路およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20640/85A IT1218471B (it) 1985-05-09 1985-05-09 Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato

Publications (2)

Publication Number Publication Date
IT8520640A0 IT8520640A0 (it) 1985-05-09
IT1218471B true IT1218471B (it) 1990-04-19

Family

ID=11169918

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20640/85A IT1218471B (it) 1985-05-09 1985-05-09 Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato

Country Status (6)

Country Link
JP (1) JPS61260666A (it)
FR (1) FR2581796B1 (it)
GB (1) GB2175138B (it)
IT (1) IT1218471B (it)
NL (1) NL8601107A (it)
SE (1) SE8602088L (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用ｉｃおよびその製造方法
EP0915508A1 (en) * 1997-10-10 1999-05-12 STMicroelectronics S.r.l. Integrated circuit with highly efficient junction insulation
DE19805786A1 (de) * 1998-02-12 1999-08-26 Siemens Ag Halbleiterbauelement mit Struktur zur Vermeidung von Querströmen
GB2367187B (en) * 2000-09-21 2002-11-13 Bookham Technology Plc An isolation device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
JPS5942463B2 (ja) * 1972-09-22 1984-10-15 ソニー株式会社 半導体集積回路装置
JPS5914897B2 (ja) * 1975-02-08 1984-04-06 ソニー株式会社 半導体装置
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device
US4609413A (en) * 1983-11-18 1986-09-02 Motorola, Inc. Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique

Also Published As

Publication number Publication date
SE8602088D0 (sv) 1986-05-07
FR2581796A1 (fr) 1986-11-14
IT8520640A0 (it) 1985-05-09
SE8602088L (sv) 1986-11-10
GB8611203D0 (en) 1986-06-18
FR2581796B1 (fr) 1989-05-19
NL8601107A (nl) 1986-12-01
GB2175138A (en) 1986-11-19
GB2175138B (en) 1989-04-19
JPS61260666A (ja) 1986-11-18

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970530