IT1223082B - Procedimento ed apparecchiatura per il consolidamento epitassiale di cristalli - Google Patents

Procedimento ed apparecchiatura per il consolidamento epitassiale di cristalli

Info

Publication number
IT1223082B
IT1223082B IT22555/87A IT2255587A IT1223082B IT 1223082 B IT1223082 B IT 1223082B IT 22555/87 A IT22555/87 A IT 22555/87A IT 2255587 A IT2255587 A IT 2255587A IT 1223082 B IT1223082 B IT 1223082B
Authority
IT
Italy
Prior art keywords
consolidation
procedure
equipment
epitaxial crystals
epitaxial
Prior art date
Application number
IT22555/87A
Other languages
English (en)
Other versions
IT8722555A0 (it
Inventor
Robert T Morris
Devlin M Gualtieri
Ii John E Marion
Original Assignee
Us Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Us Energy filed Critical Us Energy
Publication of IT8722555A0 publication Critical patent/IT8722555A0/it
Application granted granted Critical
Publication of IT1223082B publication Critical patent/IT1223082B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT22555/87A 1986-11-07 1987-11-06 Procedimento ed apparecchiatura per il consolidamento epitassiale di cristalli IT1223082B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/927,993 USH557H (en) 1986-11-07 1986-11-07 Epitaxial strengthening of crystals

Publications (2)

Publication Number Publication Date
IT8722555A0 IT8722555A0 (it) 1987-11-06
IT1223082B true IT1223082B (it) 1990-09-12

Family

ID=25455558

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22555/87A IT1223082B (it) 1986-11-07 1987-11-06 Procedimento ed apparecchiatura per il consolidamento epitassiale di cristalli

Country Status (6)

Country Link
US (1) USH557H (it)
JP (1) JPH01123000A (it)
DE (1) DE3736731A1 (it)
FR (1) FR2607833A1 (it)
GB (1) GB2198056B (it)
IT (1) IT1223082B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5573862A (en) * 1992-04-13 1996-11-12 Alliedsignal Inc. Single crystal oxide turbine blades
DE4401626A1 (de) * 1994-01-20 1995-07-27 Max Planck Gesellschaft Verfahren und Vorrichtung zur Herstellung kristalliner Schichten
US6122993A (en) * 1998-01-26 2000-09-26 Alliedsignal Inc. Isotropic energy storage flywheel rotor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614574A1 (de) * 1967-08-04 1970-10-29 Siemens Ag Halbleiterbauelement,insbesondere Halbleiterbauelement mit pn-UEbergang
US3650737A (en) * 1968-03-25 1972-03-21 Ibm Imaging method using photoconductive element having a protective coating
US3821039A (en) * 1973-03-22 1974-06-28 Rca Corp Method of epitaxially depositing a semiconductor material on a substrate
US3964035A (en) 1974-09-23 1976-06-15 Bell Telephone Laboratories, Incorporated Magnetic devices utilizing garnet epitaxial materials
US4188244A (en) * 1975-04-10 1980-02-12 Matsushita Electric Industrial Co., Ltd. Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition
US4180825A (en) * 1977-09-16 1979-12-25 Harris Corporation Heteroepitaxial deposition of GaP on silicon substrates
US4263374A (en) 1978-06-22 1981-04-21 Rockwell International Corporation Temperature-stabilized low-loss ferrite films
NL7902293A (nl) * 1979-03-23 1980-09-25 Philips Nv Magnetische beldomein structuur en magnetische beldomeininrichting.
DE3174704D1 (en) 1980-07-11 1986-07-03 Philips Nv Device for propagating magnetic domains
US4354254A (en) 1980-11-07 1982-10-12 Bell Telephone Laboratories, Incorporated Devices depending on garnet materials
US4544239A (en) 1983-03-16 1985-10-01 Litton Systems, Inc. Compressed bismuth-containing garnet films of replicable low anisotropy field value and devices utilizing same
US4625390A (en) 1983-03-16 1986-12-02 Litton Systems, Inc. Two-step method of manufacturing compressed bismuth-containing garnet films of replicable low anisotropy field value
US4544438A (en) 1984-05-31 1985-10-01 At&T Bell Laboratories Liquid phase epitaxial growth of bismuth-containing garnet films

Also Published As

Publication number Publication date
JPH01123000A (ja) 1989-05-16
GB2198056B (en) 1990-09-26
USH557H (en) 1988-12-06
GB2198056A (en) 1988-06-08
DE3736731A1 (de) 1988-05-11
FR2607833A1 (fr) 1988-06-10
IT8722555A0 (it) 1987-11-06
GB8725597D0 (en) 1987-12-09

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