JPH01123000A - 結晶の強化方法および装置 - Google Patents

結晶の強化方法および装置

Info

Publication number
JPH01123000A
JPH01123000A JP62280265A JP28026587A JPH01123000A JP H01123000 A JPH01123000 A JP H01123000A JP 62280265 A JP62280265 A JP 62280265A JP 28026587 A JP28026587 A JP 28026587A JP H01123000 A JPH01123000 A JP H01123000A
Authority
JP
Japan
Prior art keywords
crystal
epitaxial layer
substrate
epitaxial
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62280265A
Other languages
English (en)
Japanese (ja)
Inventor
Robert T Morris
ロバート　ティ．モリス
Ii John E Marion
ジョン　イー．マリオン，ザ　セカンド
Devlin M Gaultieri
デブリン　エム．ガルティエリ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Government of the United States of America
Original Assignee
Government of the United States of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Government of the United States of America filed Critical Government of the United States of America
Publication of JPH01123000A publication Critical patent/JPH01123000A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP62280265A 1986-11-07 1987-11-05 結晶の強化方法および装置 Pending JPH01123000A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/927,993 USH557H (en) 1986-11-07 1986-11-07 Epitaxial strengthening of crystals
US927993 2001-08-10

Publications (1)

Publication Number Publication Date
JPH01123000A true JPH01123000A (ja) 1989-05-16

Family

ID=25455558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62280265A Pending JPH01123000A (ja) 1986-11-07 1987-11-05 結晶の強化方法および装置

Country Status (6)

Country Link
US (1) USH557H (it)
JP (1) JPH01123000A (it)
DE (1) DE3736731A1 (it)
FR (1) FR2607833A1 (it)
GB (1) GB2198056B (it)
IT (1) IT1223082B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5573862A (en) * 1992-04-13 1996-11-12 Alliedsignal Inc. Single crystal oxide turbine blades
DE4401626A1 (de) * 1994-01-20 1995-07-27 Max Planck Gesellschaft Verfahren und Vorrichtung zur Herstellung kristalliner Schichten
US6122993A (en) * 1998-01-26 2000-09-26 Alliedsignal Inc. Isotropic energy storage flywheel rotor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614574A1 (de) * 1967-08-04 1970-10-29 Siemens Ag Halbleiterbauelement,insbesondere Halbleiterbauelement mit pn-UEbergang
US3650737A (en) * 1968-03-25 1972-03-21 Ibm Imaging method using photoconductive element having a protective coating
US3821039A (en) * 1973-03-22 1974-06-28 Rca Corp Method of epitaxially depositing a semiconductor material on a substrate
US3964035A (en) 1974-09-23 1976-06-15 Bell Telephone Laboratories, Incorporated Magnetic devices utilizing garnet epitaxial materials
US4188244A (en) * 1975-04-10 1980-02-12 Matsushita Electric Industrial Co., Ltd. Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition
US4180825A (en) * 1977-09-16 1979-12-25 Harris Corporation Heteroepitaxial deposition of GaP on silicon substrates
US4263374A (en) 1978-06-22 1981-04-21 Rockwell International Corporation Temperature-stabilized low-loss ferrite films
NL7902293A (nl) * 1979-03-23 1980-09-25 Philips Nv Magnetische beldomein structuur en magnetische beldomeininrichting.
DE3174704D1 (en) 1980-07-11 1986-07-03 Philips Nv Device for propagating magnetic domains
US4354254A (en) 1980-11-07 1982-10-12 Bell Telephone Laboratories, Incorporated Devices depending on garnet materials
US4544239A (en) 1983-03-16 1985-10-01 Litton Systems, Inc. Compressed bismuth-containing garnet films of replicable low anisotropy field value and devices utilizing same
US4625390A (en) 1983-03-16 1986-12-02 Litton Systems, Inc. Two-step method of manufacturing compressed bismuth-containing garnet films of replicable low anisotropy field value
US4544438A (en) 1984-05-31 1985-10-01 At&T Bell Laboratories Liquid phase epitaxial growth of bismuth-containing garnet films

Also Published As

Publication number Publication date
IT1223082B (it) 1990-09-12
GB2198056B (en) 1990-09-26
USH557H (en) 1988-12-06
GB2198056A (en) 1988-06-08
DE3736731A1 (de) 1988-05-11
FR2607833A1 (fr) 1988-06-10
IT8722555A0 (it) 1987-11-06
GB8725597D0 (en) 1987-12-09

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