IT1228842B - Circuito per la regolazione della corrente di base di un dispositivo di potenza a semiconduttore. - Google Patents

Circuito per la regolazione della corrente di base di un dispositivo di potenza a semiconduttore.

Info

Publication number
IT1228842B
IT1228842B IT8919502A IT1950289A IT1228842B IT 1228842 B IT1228842 B IT 1228842B IT 8919502 A IT8919502 A IT 8919502A IT 1950289 A IT1950289 A IT 1950289A IT 1228842 B IT1228842 B IT 1228842B
Authority
IT
Italy
Prior art keywords
circuit
power device
semiconductor power
current adjustment
basic current
Prior art date
Application number
IT8919502A
Other languages
English (en)
Other versions
IT8919502A0 (it
Inventor
Sergio Palara
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8919502A priority Critical patent/IT1228842B/it
Publication of IT8919502A0 publication Critical patent/IT8919502A0/it
Priority to EP90200307A priority patent/EP0384513B1/en
Priority to DE69008578T priority patent/DE69008578T2/de
Priority to US07/480,047 priority patent/US5027004A/en
Priority to CA002010460A priority patent/CA2010460C/en
Priority to JP2038539A priority patent/JP2821931B2/ja
Application granted granted Critical
Publication of IT1228842B publication Critical patent/IT1228842B/it

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04213—Modifications for accelerating switching by feedback from the output circuit to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/615—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in a Darlington configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Electronic Switches (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Control Of Electrical Variables (AREA)
IT8919502A 1989-02-21 1989-02-21 Circuito per la regolazione della corrente di base di un dispositivo di potenza a semiconduttore. IT1228842B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT8919502A IT1228842B (it) 1989-02-21 1989-02-21 Circuito per la regolazione della corrente di base di un dispositivo di potenza a semiconduttore.
EP90200307A EP0384513B1 (en) 1989-02-21 1990-02-12 Circuit for regulating the base current of a semiconductor power device
DE69008578T DE69008578T2 (de) 1989-02-21 1990-02-12 Schaltung zum Regeln des Basisstroms eines Halbleiterleistungsgerätes.
US07/480,047 US5027004A (en) 1989-02-21 1990-02-14 Circuit for regulating the base current of a semiconductor power device
CA002010460A CA2010460C (en) 1989-02-21 1990-02-20 Circuit for regulationg the base current of a semiconductor power device
JP2038539A JP2821931B2 (ja) 1989-02-21 1990-02-21 半導体電力装置のベース電流を調整するための回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8919502A IT1228842B (it) 1989-02-21 1989-02-21 Circuito per la regolazione della corrente di base di un dispositivo di potenza a semiconduttore.

Publications (2)

Publication Number Publication Date
IT8919502A0 IT8919502A0 (it) 1989-02-21
IT1228842B true IT1228842B (it) 1991-07-05

Family

ID=11158569

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8919502A IT1228842B (it) 1989-02-21 1989-02-21 Circuito per la regolazione della corrente di base di un dispositivo di potenza a semiconduttore.

Country Status (6)

Country Link
US (1) US5027004A (it)
EP (1) EP0384513B1 (it)
JP (1) JP2821931B2 (it)
CA (1) CA2010460C (it)
DE (1) DE69008578T2 (it)
IT (1) IT1228842B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666600B2 (ja) * 1989-10-02 1994-08-24 株式会社東芝 電流検出回路
JP3031419B2 (ja) * 1990-06-13 2000-04-10 三菱電機株式会社 半導体集積回路
IT1248607B (it) * 1991-05-21 1995-01-19 Cons Ric Microelettronica Circuito di pilotaggio di un transistore di potenza con una corrente di base funzione predeterminata di quella di collettore
DE69320464T2 (de) * 1992-03-10 1998-12-24 Analog Devices Inc., Norwood, Mass. Schaltungsanordnung zur kontrolle der sättigung eines transistors.
JP2900207B2 (ja) * 1992-04-02 1999-06-02 シャープ株式会社 定電流回路
US5362991A (en) * 1992-12-10 1994-11-08 Samela Francis M Active deassertion circuit
US5528167A (en) * 1992-05-14 1996-06-18 Methode Electronics, Inc. Combination of terminator apparatus enhancements
EP0584435B1 (en) * 1992-08-26 1997-01-15 STMicroelectronics S.r.l. High impedance,high ratio current mirror
JP3363980B2 (ja) * 1993-01-27 2003-01-08 三星電子株式会社 出力トランジスタのベース電流制御回路および電子装置の出力駆動段回路
US5504448A (en) * 1994-08-01 1996-04-02 Motorola, Inc. Current limit sense circuit and method for controlling a transistor
US5798668A (en) * 1995-11-28 1998-08-25 Thomson Consumer Electronics, Inc. Low-power transconductance driver amplifier
US6677807B1 (en) * 1999-11-05 2004-01-13 Analog Devices, Inc. Current mirror replica biasing system
US7050914B2 (en) * 2004-10-22 2006-05-23 Aimtron Technology Corp. Current sensing circuit
JP5789427B2 (ja) * 2011-06-17 2015-10-07 新電元工業株式会社 ドライブ回路

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1219780B (it) * 1983-12-20 1990-05-24 Ates Componenti Elettron Circuito di comando in commutazione di carichi induttivi,integrabile monoliticamente,comprendente uno stadio finale di tipo darlington
US4555742A (en) * 1984-05-09 1985-11-26 Motorola, Inc. Short detection circuit and method for an electrical load
JPH0690656B2 (ja) * 1985-01-24 1994-11-14 ソニー株式会社 基準電圧の形成回路
FR2583933B1 (fr) * 1985-06-25 1995-09-01 Thomson Csf Alimentation electrique
IT1184820B (it) * 1985-08-13 1987-10-28 Sgs Microelettronica Spa Generatore di corrente stabilizzata ad alimentazione singola,particolarmente per circuiti integrati di tipo mos
JPH0767074B2 (ja) * 1986-04-25 1995-07-19 株式会社東芝 出力電流駆動回路
US4814724A (en) * 1986-07-15 1989-03-21 Toko Kabushiki Kaisha Gain control circuit of current mirror circuit type
US4733163A (en) * 1987-01-02 1988-03-22 Motorola, Inc. Digitally controlled current source
JPS6444610A (en) * 1987-08-12 1989-02-17 Toshiba Corp Output circuit
US4789842A (en) * 1987-11-23 1988-12-06 Jiri Naxera Composite transistor device with over-current protection
US4879524A (en) * 1988-08-22 1989-11-07 Texas Instruments Incorporated Constant current drive circuit with reduced transient recovery time
US4950976A (en) * 1989-09-29 1990-08-21 Westinghouse Electric Corp. Current variation reduction for mosfet current sources

Also Published As

Publication number Publication date
JP2821931B2 (ja) 1998-11-05
DE69008578D1 (de) 1994-06-09
EP0384513A1 (en) 1990-08-29
CA2010460A1 (en) 1990-08-21
DE69008578T2 (de) 1994-11-24
JPH02262360A (ja) 1990-10-25
US5027004A (en) 1991-06-25
IT8919502A0 (it) 1989-02-21
CA2010460C (en) 2000-02-15
EP0384513B1 (en) 1994-05-04

Similar Documents

Publication Publication Date Title
EP0272985A3 (en) Constant current semiconductor device
DE69026164D1 (de) Halbleitende integrierte Schaltung
IT1228779B (it) Dispositivo per la regolazione della potenza riscaldante dell'elemento riscaldante di una piastra di un fornello elettrico oppure di una piastra di una cucina elettrica.
IT1228842B (it) Circuito per la regolazione della corrente di base di un dispositivo di potenza a semiconduttore.
KR890004421A (ko) 반도체집적회로장치
DE69020760D1 (de) Elektrische Halbleiter-Leistungskonvertierungseinrichtung.
ITMI911390A1 (it) Circuito di pilotaggio di un transistore di potenza con una corrente di base funzione predeterminata di quella di collettore
KR890012388A (ko) Mis형 반도체 집적회로장치
DE69010546D1 (de) Hochfrequenz-Halbleiteranordnung.
IT1178000B (it) Circuito di comando per base di un transistor di potenza
GB2239560B (en) Compound semiconductor integrated circuit device
KR900011002A (ko) 전류 조절 회로를 갖고 있는 모노리딕 반도체 집적회로 디바이스
KR910007151A (ko) 대전력 반도체장치
DE69031671D1 (de) Integrierte Halbleiterschaltung
IT1229326B (it) Dispositivo di commutazione per la selezione di un circuito di espansione stereo.
DE69131235D1 (de) Halbleitende Hochleistungsverstärkervorrichtung
EP0430133A3 (en) Power semiconductor device having emitter shorts
DE3867587D1 (de) Halbleiterschaltungsvorrichtung.
DE69031609D1 (de) Halbleiteranordnung
IT1234517B (it) Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione
DE69026226D1 (de) Integrierte Halbleiterschaltung
EP0431586A3 (en) High-power semiconductor device
DE69029226D1 (de) Halbleiteranordnung
KR860007757A (ko) 반도체 집적회로장치
DE69031944D1 (de) Integrierte halbleiterschaltung

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970227