IT1234517B - Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione - Google Patents
Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazioneInfo
- Publication number
- IT1234517B IT1234517B IT8806611A IT661188A IT1234517B IT 1234517 B IT1234517 B IT 1234517B IT 8806611 A IT8806611 A IT 8806611A IT 661188 A IT661188 A IT 661188A IT 1234517 B IT1234517 B IT 1234517B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- semiconductor device
- power semiconductor
- bipolar power
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
- H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/135—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/281—Base electrodes for bipolar transistors
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8806611A IT1234517B (it) | 1988-05-05 | 1988-05-05 | Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione |
| US07/344,568 US5032887A (en) | 1988-05-05 | 1989-04-28 | Bipolar power semiconductor device and process for its manufacture |
| JP1113519A JPH0216740A (ja) | 1988-05-05 | 1989-05-03 | パイポーラパワー半導体デバイス及びその製造方法 |
| DE68917197T DE68917197T2 (de) | 1988-05-05 | 1989-05-03 | Bipolarer Leistungshalbleiteranordnung und Verfahren zur ihrer Herstellung. |
| EP89830186A EP0341221B1 (en) | 1988-05-05 | 1989-05-03 | Bipolar power semiconductor device and process for its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8806611A IT1234517B (it) | 1988-05-05 | 1988-05-05 | Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8806611A0 IT8806611A0 (it) | 1988-05-05 |
| IT1234517B true IT1234517B (it) | 1992-05-19 |
Family
ID=11121393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT8806611A IT1234517B (it) | 1988-05-05 | 1988-05-05 | Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5032887A (it) |
| EP (1) | EP0341221B1 (it) |
| JP (1) | JPH0216740A (it) |
| DE (1) | DE68917197T2 (it) |
| IT (1) | IT1234517B (it) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0490514A (ja) * | 1990-08-02 | 1992-03-24 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| FR2687843A1 (fr) * | 1992-02-24 | 1993-08-27 | Motorola Semiconducteurs | Transistor bipolaire lateral pnp et procede de fabrication. |
| US5637910A (en) * | 1994-02-02 | 1997-06-10 | Rohm Co., Ltd. | Multi-emitter or a multi-base transistor |
| SE516226C2 (sv) * | 1995-04-10 | 2001-12-03 | Forskarpatent I Linkoeping Ab | Bipolära transistorer med extra bas-kollektor- och bas- emitterstrukturer |
| GB0318146D0 (en) * | 2003-08-02 | 2003-09-03 | Zetex Plc | Bipolar transistor with a low saturation voltage |
| US7598521B2 (en) * | 2004-03-29 | 2009-10-06 | Sanyo Electric Co., Ltd. | Semiconductor device in which the emitter resistance is reduced |
| US9331186B2 (en) | 2009-12-21 | 2016-05-03 | Nxp B.V. | Semiconductor device with multilayer contact and method of manufacturing the same |
| CN116057711A (zh) * | 2020-09-03 | 2023-05-02 | 日立能源瑞士股份公司 | 功率半导体器件 |
| US20230223393A1 (en) * | 2022-01-13 | 2023-07-13 | Texas Instruments Incorporated | Semiconductor devices with high current capability for electrostatic discharge or surge protection |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3381183A (en) * | 1965-06-21 | 1968-04-30 | Rca Corp | High power multi-emitter transistor |
| US4008484A (en) * | 1968-04-04 | 1977-02-15 | Fujitsu Ltd. | Semiconductor device having multilayered electrode structure |
| US3843425A (en) * | 1971-04-05 | 1974-10-22 | Rca Corp | Overlay transistor employing highly conductive semiconductor grid and method for making |
| US4291319A (en) * | 1976-05-19 | 1981-09-22 | National Semiconductor Corporation | Open base bipolar transistor protective device |
| JPS5397379A (en) * | 1977-02-07 | 1978-08-25 | Fujitsu Ltd | Transistor |
| US4581626A (en) * | 1977-10-25 | 1986-04-08 | General Electric Company | Thyristor cathode and transistor emitter structures with insulator islands |
| US4417265A (en) * | 1981-03-26 | 1983-11-22 | National Semiconductor Corporation | Lateral PNP power transistor |
| JPS57160160A (en) * | 1981-03-27 | 1982-10-02 | Nippon Denso Co Ltd | Semiconductor device |
| JPS5943830B2 (ja) * | 1981-10-23 | 1984-10-24 | 株式会社東芝 | 圧接型半導体装置 |
| FR2545654B1 (fr) * | 1983-05-03 | 1985-09-13 | Fairchild Camera Instr Co | Composant semi-conducteur de puissance, et procede pour la fabrication |
| JPS601846A (ja) * | 1983-06-18 | 1985-01-08 | Toshiba Corp | 多層配線構造の半導体装置とその製造方法 |
| JPS60132366A (ja) * | 1983-12-21 | 1985-07-15 | Toshiba Corp | 半導体装置 |
| DE3573357D1 (en) * | 1984-12-27 | 1989-11-02 | Siemens Ag | Semiconductor power switch |
| US4656496A (en) * | 1985-02-04 | 1987-04-07 | National Semiconductor Corporation | Power transistor emitter ballasting |
| JPS6236305U (it) * | 1985-08-20 | 1987-03-04 |
-
1988
- 1988-05-05 IT IT8806611A patent/IT1234517B/it active
-
1989
- 1989-04-28 US US07/344,568 patent/US5032887A/en not_active Expired - Lifetime
- 1989-05-03 DE DE68917197T patent/DE68917197T2/de not_active Expired - Fee Related
- 1989-05-03 EP EP89830186A patent/EP0341221B1/en not_active Expired - Lifetime
- 1989-05-03 JP JP1113519A patent/JPH0216740A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE68917197T2 (de) | 1995-03-16 |
| EP0341221A2 (en) | 1989-11-08 |
| IT8806611A0 (it) | 1988-05-05 |
| US5032887A (en) | 1991-07-16 |
| DE68917197D1 (de) | 1994-09-08 |
| EP0341221A3 (en) | 1990-08-22 |
| EP0341221B1 (en) | 1994-08-03 |
| JPH0216740A (ja) | 1990-01-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970530 |