IT1230027B - Dispositivo darlington pnp di struttura perfezionata per quanto concerne il diodo integrato di estrazione, e suo procedimento di fabbricazione - Google Patents
Dispositivo darlington pnp di struttura perfezionata per quanto concerne il diodo integrato di estrazione, e suo procedimento di fabbricazioneInfo
- Publication number
- IT1230027B IT1230027B IT8806625A IT662588A IT1230027B IT 1230027 B IT1230027 B IT 1230027B IT 8806625 A IT8806625 A IT 8806625A IT 662588 A IT662588 A IT 662588A IT 1230027 B IT1230027 B IT 1230027B
- Authority
- IT
- Italy
- Prior art keywords
- regard
- manufacturing procedure
- pnp device
- perfect structure
- integrated extraction
- Prior art date
Links
- 238000000605 extraction Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8806625A IT1230027B (it) | 1988-11-30 | 1988-11-30 | Dispositivo darlington pnp di struttura perfezionata per quanto concerne il diodo integrato di estrazione, e suo procedimento di fabbricazione |
| EP19890202986 EP0371557A3 (en) | 1988-11-30 | 1989-11-24 | Pnp darlington device structurally improved with regard to the integrated speed-up diode, and its manufacturing method |
| JP1309400A JPH02189932A (ja) | 1988-11-30 | 1989-11-30 | 集積化ｐｎｐダーリントン装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8806625A IT1230027B (it) | 1988-11-30 | 1988-11-30 | Dispositivo darlington pnp di struttura perfezionata per quanto concerne il diodo integrato di estrazione, e suo procedimento di fabbricazione |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8806625A0 IT8806625A0 (it) | 1988-11-30 |
| IT1230027B true IT1230027B (it) | 1991-09-24 |
Family
ID=11121574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT8806625A IT1230027B (it) | 1988-11-30 | 1988-11-30 | Dispositivo darlington pnp di struttura perfezionata per quanto concerne il diodo integrato di estrazione, e suo procedimento di fabbricazione |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0371557A3 (it) |
| JP (1) | JPH02189932A (it) |
| IT (1) | IT1230027B (it) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111415985B (zh) * | 2020-03-06 | 2020-11-10 | 江阴新顺微电子有限公司 | Pnp型低bvebo达林顿三极管器件结构及制造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5752164A (en) * | 1980-09-16 | 1982-03-27 | Shindengen Electric Mfg Co Ltd | Composite transistor |
| JPS5779659A (en) * | 1980-11-05 | 1982-05-18 | Matsushita Electronics Corp | Monolithic darlington transistor |
| US4669180A (en) * | 1984-12-18 | 1987-06-02 | Advanced Micro Devices, Inc. | Method of forming emitter coupled logic bipolar memory cell using polysilicon Schottky diodes for coupling |
| JPS62143453A (ja) * | 1985-12-18 | 1987-06-26 | Matsushita Electronics Corp | モノリシツク・ダ−リントン接続トランジスタの製造方法 |
-
1988
- 1988-11-30 IT IT8806625A patent/IT1230027B/it active
-
1989
- 1989-11-24 EP EP19890202986 patent/EP0371557A3/en not_active Withdrawn
- 1989-11-30 JP JP1309400A patent/JPH02189932A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0371557A2 (en) | 1990-06-06 |
| EP0371557A3 (en) | 1991-06-12 |
| JPH02189932A (ja) | 1990-07-25 |
| IT8806625A0 (it) | 1988-11-30 |
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