JPS5779659A - Monolithic darlington transistor - Google Patents

Monolithic darlington transistor

Info

Publication number
JPS5779659A
JPS5779659A JP55156382A JP15638280A JPS5779659A JP S5779659 A JPS5779659 A JP S5779659A JP 55156382 A JP55156382 A JP 55156382A JP 15638280 A JP15638280 A JP 15638280A JP S5779659 A JPS5779659 A JP S5779659A
Authority
JP
Japan
Prior art keywords
region
transistor
base
type
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55156382A
Other languages
Japanese (ja)
Inventor
Hideo Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP55156382A priority Critical patent/JPS5779659A/en
Publication of JPS5779659A publication Critical patent/JPS5779659A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a transistor having high-speed switching characteristics and being excellent in mass-productivity and reliability, by forming a diode for carrier outflow within a base region of a monolithic darlington transistor. CONSTITUTION:A P type base region 2 and N type emitter regions 3, 4 are formed on an N type silicon substrate 1. Regions 5, 6 form registors R1, R2, and a P-N junction below a shortcircuiting part of an emitter electrode 10 constitutes a diode D1. An N type region 13 for a cathode region of a diode D2 and a P type region 14 for an anode region are formed within a base region 2 of a transistor. A cathode region 13 and the base of a transistor Tr1 to become the foregoing stage of a monolithic darlington transistor are combined with a base electrode 15. The base of a transistor Tr2 becoming the following state and an anode region 14 are combined with an internal wiring 16.
JP55156382A 1980-11-05 1980-11-05 Monolithic darlington transistor Pending JPS5779659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156382A JPS5779659A (en) 1980-11-05 1980-11-05 Monolithic darlington transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156382A JPS5779659A (en) 1980-11-05 1980-11-05 Monolithic darlington transistor

Publications (1)

Publication Number Publication Date
JPS5779659A true JPS5779659A (en) 1982-05-18

Family

ID=15626525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156382A Pending JPS5779659A (en) 1980-11-05 1980-11-05 Monolithic darlington transistor

Country Status (1)

Country Link
JP (1) JPS5779659A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371557A3 (en) * 1988-11-30 1991-06-12 STMicroelectronics S.r.l. Pnp darlington device structurally improved with regard to the integrated speed-up diode, and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371557A3 (en) * 1988-11-30 1991-06-12 STMicroelectronics S.r.l. Pnp darlington device structurally improved with regard to the integrated speed-up diode, and its manufacturing method

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