IT1232412B - Dispositivo semiconduttore e proce dimento per la sua fabbricazione - Google Patents

Dispositivo semiconduttore e proce dimento per la sua fabbricazione

Info

Publication number
IT1232412B
IT1232412B IT8967032A IT6703289A IT1232412B IT 1232412 B IT1232412 B IT 1232412B IT 8967032 A IT8967032 A IT 8967032A IT 6703289 A IT6703289 A IT 6703289A IT 1232412 B IT1232412 B IT 1232412B
Authority
IT
Italy
Prior art keywords
dimento
proce
manufacture
semiconductive device
semiconductive
Prior art date
Application number
IT8967032A
Other languages
English (en)
Other versions
IT8967032A0 (it
Inventor
Susumu Yoshida
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of IT8967032A0 publication Critical patent/IT8967032A0/it
Application granted granted Critical
Publication of IT1232412B publication Critical patent/IT1232412B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
IT8967032A 1988-01-22 1989-01-20 Dispositivo semiconduttore e proce dimento per la sua fabbricazione IT1232412B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63012864A JPH01187984A (ja) 1988-01-22 1988-01-22 半導体装置

Publications (2)

Publication Number Publication Date
IT8967032A0 IT8967032A0 (it) 1989-01-20
IT1232412B true IT1232412B (it) 1992-02-17

Family

ID=11817279

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8967032A IT1232412B (it) 1988-01-22 1989-01-20 Dispositivo semiconduttore e proce dimento per la sua fabbricazione

Country Status (4)

Country Link
US (1) US5142331A (it)
JP (1) JPH01187984A (it)
DE (1) DE3900254A1 (it)
IT (1) IT1232412B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4132903C2 (de) * 1991-10-04 1996-03-14 Daimler Benz Aerospace Ag Dünne Solarzelle und Verfahren zu ihrer Herstellung
US5444637A (en) * 1993-09-28 1995-08-22 Advanced Micro Devices, Inc. Programmable semiconductor wafer for sensing, recording and retrieving fabrication process conditions to which the wafer is exposed
US7083051B2 (en) * 2002-11-15 2006-08-01 Adc Telecommunications, Inc. Cable management assembly, system and method
EP2629590A1 (en) * 2008-06-17 2013-08-21 Hitachi Ltd. An organic light-emitting device
WO2010077622A1 (en) * 2008-12-08 2010-07-08 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
CN101814538B (zh) * 2009-02-25 2011-09-28 中国科学院半导体研究所 单片集成的微型太阳电池阵列及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3339075A (en) * 1963-08-12 1967-08-29 Westinghouse Electric Corp Solid state display device for amplifying or converting input radiation including a field emissive layer
US4286278A (en) * 1977-09-01 1981-08-25 Honeywell Inc. Hybrid mosaic IR/CCD focal plane
US4278473A (en) * 1979-08-24 1981-07-14 Varian Associates, Inc. Monolithic series-connected solar cell
FR2536908B1 (fr) * 1982-11-30 1986-03-14 Telecommunications Sa Procede de fabrication d'un detecteur infrarouge matriciel a eclairage par la face avant
US4564720A (en) * 1983-05-13 1986-01-14 The United States Of America As Represented By The United States Department Of Energy Pure silver ohmic contacts to N- and P- type gallium arsenide materials
JPS609177A (ja) * 1983-06-29 1985-01-18 Citizen Watch Co Ltd 薄膜非線形抵抗素子
US4525732A (en) * 1983-08-31 1985-06-25 Texas Instruments Incorporated Distributed IMPATT structure
JPS60253286A (ja) * 1984-05-29 1985-12-13 Rohm Co Ltd メサエツチング分離型モノリシツク表示発光ダイオ−ド
JPS61131573A (ja) * 1984-11-30 1986-06-19 Agency Of Ind Science & Technol メサ型ホトダイオ−ド
JPS6249676A (ja) * 1985-08-29 1987-03-04 Sharp Corp 太陽電池
JPS62104178A (ja) * 1985-10-31 1987-05-14 Fujitsu Ltd Ｐｉｎホトダイオ−ド
JPS62189763A (ja) * 1986-02-14 1987-08-19 Sharp Corp 太陽電池セル
US4872925A (en) * 1987-10-29 1989-10-10 Glasstech, Inc. Photovoltaic cell fabrication method and panel made thereby

Also Published As

Publication number Publication date
JPH01187984A (ja) 1989-07-27
DE3900254A1 (de) 1989-08-10
IT8967032A0 (it) 1989-01-20
US5142331A (en) 1992-08-25

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Effective date: 19960129