IT1245365B - Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione - Google Patents

Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione

Info

Publication number
IT1245365B
IT1245365B ITMI910836A ITMI910836A IT1245365B IT 1245365 B IT1245365 B IT 1245365B IT MI910836 A ITMI910836 A IT MI910836A IT MI910836 A ITMI910836 A IT MI910836A IT 1245365 B IT1245365 B IT 1245365B
Authority
IT
Italy
Prior art keywords
current density
power device
high current
manufacturing process
bipolar power
Prior art date
Application number
ITMI910836A
Other languages
English (en)
Inventor
Ferruccio Frisina
Giuseppe Ferla
Original Assignee
Cons Ric Microelettronica
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cons Ric Microelettronica, Sgs Thomson Microelectronics filed Critical Cons Ric Microelettronica
Priority to ITMI910836A priority Critical patent/IT1245365B/it
Publication of ITMI910836A0 publication Critical patent/ITMI910836A0/it
Priority to DE69229927T priority patent/DE69229927T2/de
Priority to EP92200748A priority patent/EP0506170B1/en
Priority to US07/852,310 priority patent/US5343068A/en
Priority to JP04068640A priority patent/JP3125112B2/ja
Publication of ITMI910836A1 publication Critical patent/ITMI910836A1/it
Priority to US08/251,514 priority patent/US5468660A/en
Application granted granted Critical
Publication of IT1245365B publication Critical patent/IT1245365B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/18—Diffusion lifetime killers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)

Abstract

La struttura è composta da un'unica piastrina (1) di materiale semiconduttore, che comprende una zona (32) ad elevato tempo di vita dei portatori minoritari, che costituisce un dispositivo bipolare di potenza ad alta densità di corrente, ed almeno una zona (20, 21; 20', 21') a ridotto tempo di vita dei portatori minoritari, che costituisce un diodo veloce.(Fig. 4).
ITMI910836A 1991-03-28 1991-03-28 Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione IT1245365B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
ITMI910836A IT1245365B (it) 1991-03-28 1991-03-28 Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione
DE69229927T DE69229927T2 (de) 1991-03-28 1992-03-17 Integrierte Struktur einer bipolaren Leistungsanordnung mit hoher Stromdichte und einer schnellen Diode und Verfahren zu ihrer Herstellung
EP92200748A EP0506170B1 (en) 1991-03-28 1992-03-17 Integrated structure of bipolar power device with high current density and fast diode and related manufacturing process
US07/852,310 US5343068A (en) 1991-03-28 1992-03-18 Integrated bipolar power device and a fast diode
JP04068640A JP3125112B2 (ja) 1991-03-28 1992-03-26 高電流密度を有するバイポーラパワー素子とファストダイオードの集積構造ならびに関連する製造プロセス
US08/251,514 US5468660A (en) 1991-03-28 1994-05-31 Process for manufacturing an integrated bipolar power device and a fast diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI910836A IT1245365B (it) 1991-03-28 1991-03-28 Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione

Publications (3)

Publication Number Publication Date
ITMI910836A0 ITMI910836A0 (it) 1991-03-28
ITMI910836A1 ITMI910836A1 (it) 1992-09-28
IT1245365B true IT1245365B (it) 1994-09-20

Family

ID=11359289

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI910836A IT1245365B (it) 1991-03-28 1991-03-28 Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione

Country Status (5)

Country Link
US (2) US5343068A (it)
EP (1) EP0506170B1 (it)
JP (1) JP3125112B2 (it)
DE (1) DE69229927T2 (it)
IT (1) IT1245365B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642085A (ja) * 1992-07-21 1994-02-15 Daiwa House Ind Co Ltd 外壁の開口フレーム固定構造
DE69421606T2 (de) * 1994-03-30 2000-05-31 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Verfahren zur Herstellung von bipolaren Transistoren mit kontrollierter Speicherzeit
US5838057A (en) * 1994-08-03 1998-11-17 Texas Instruments Incorporated Transistor switches
GB2292252A (en) * 1994-08-05 1996-02-14 Texas Instruments Ltd Rapid turn off semiconductor devices
GB9509301D0 (en) * 1995-05-06 1995-06-28 Atomic Energy Authority Uk An improved process for the production of semi-conductor devices
GB2325343A (en) * 1997-05-14 1998-11-18 Mitel Semiconductor Ltd Semiconductor devices with p-n junctions
GB9709642D0 (en) * 1997-05-14 1997-07-02 Plessey Semiconductors Ltd Improvements in or relating to semiconductor devices
US6358825B1 (en) * 2000-11-21 2002-03-19 Fairchild Semiconductor Corporation Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control
DE102007020039B4 (de) * 2007-04-27 2011-07-14 Infineon Technologies Austria Ag Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement
CN115274436B (zh) * 2022-09-28 2023-01-10 瑞森半导体科技(湖南)有限公司 一种快恢复二极管及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3486950A (en) * 1967-04-26 1969-12-30 Motorola Inc Localized control of carrier lifetimes in p-n junction devices and integrated circuits
DE1619972A1 (de) * 1967-05-02 1971-03-18 Licentia Gmbh Verfahren zum Gettern von metallischen Verunreinigungen aus Siliziumkristallen
US3645808A (en) * 1967-07-31 1972-02-29 Hitachi Ltd Method for fabricating a semiconductor-integrated circuit
GB1250377A (it) * 1968-08-24 1971-10-20
US3625781A (en) * 1969-05-09 1971-12-07 Ibm Method of reducing carrier lifetime in semiconductor structures
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum
JPS52149666U (it) * 1976-05-11 1977-11-12
JPS56114367A (en) * 1980-02-14 1981-09-08 Toshiba Corp Semiconductor device
DE3331631A1 (de) * 1982-09-01 1984-03-01 Mitsubishi Denki K.K., Tokyo Halbleiter-bauelement
US5128742A (en) * 1988-04-14 1992-07-07 Powerex, Inc. Variable gain switch
FR2638892B1 (fr) * 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede

Also Published As

Publication number Publication date
DE69229927D1 (de) 1999-10-14
US5468660A (en) 1995-11-21
JPH0822995A (ja) 1996-01-23
DE69229927T2 (de) 2000-01-20
EP0506170B1 (en) 1999-09-08
ITMI910836A1 (it) 1992-09-28
US5343068A (en) 1994-08-30
ITMI910836A0 (it) 1991-03-28
EP0506170A1 (en) 1992-09-30
JP3125112B2 (ja) 2001-01-15

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Legal Events

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0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329