IT1253682B - Struttura di protezione dalle scariche elettrostatiche - Google Patents

Struttura di protezione dalle scariche elettrostatiche

Info

Publication number
IT1253682B
IT1253682B ITVA910029A ITVA910029A IT1253682B IT 1253682 B IT1253682 B IT 1253682B IT VA910029 A ITVA910029 A IT VA910029A IT VA910029 A ITVA910029 A IT VA910029A IT 1253682 B IT1253682 B IT 1253682B
Authority
IT
Italy
Prior art keywords
region
emitter region
trigger
bipolar transistor
vertical
Prior art date
Application number
ITVA910029A
Other languages
English (en)
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to ITVA910029A priority Critical patent/IT1253682B/it
Publication of ITVA910029A0 publication Critical patent/ITVA910029A0/it
Priority to US07/941,520 priority patent/US5341005A/en
Priority to EP92830477A priority patent/EP0532481B1/en
Priority to DE69220159T priority patent/DE69220159T2/de
Priority to JP4270983A priority patent/JPH05308124A/ja
Publication of ITVA910029A1 publication Critical patent/ITVA910029A1/it
Application granted granted Critical
Publication of IT1253682B publication Critical patent/IT1253682B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Una struttura integrata di protezione da scariche elettrostatiche delle strutture di componenti di un circuito integrato operativamente collegate ad un piedino di collegamento esterno del circuito integrato è formata in un'unica sacca epitassiale ed è essenzialmente costituita da un diodo zener di innesco e da un transistore bipolare verticale. La regione di collettore del transistore bipolare verticale è collegata al piedino da proteggere e costituisce anche uno dei due terminali della giunzione zener di innesco. Attorno ad una regione di emettitore e separata da questa è presente una regione anulare a drogaggio superiore della regione di base del transistore avente lo scopo di intercettare la corrente di valanga della giunzione zener di innesco e di distribuire in modo uniforme la corrente in base al transistore verticale e di fungere da sbarramento per eventuali flussi di elettroni che dalla regione di emettitore possono diffondere verso la giunzione in breakdown. L'eventuale aggiunta di un ulteriore regione di emettitore formata in posizione prospicente la regione di collettore/catodo ed il collegamento di questa ulteriore regione di emettitore alla regione anulare consente di innescare durante una scarica un transistore bipolare laterale che determina una riduzione della caduta ohmica attraverso la struttura di protezione.
ITVA910029A 1991-09-12 1991-09-12 Struttura di protezione dalle scariche elettrostatiche IT1253682B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
ITVA910029A IT1253682B (it) 1991-09-12 1991-09-12 Struttura di protezione dalle scariche elettrostatiche
US07/941,520 US5341005A (en) 1991-09-12 1992-09-08 Structure for protecting an integrated circuit from electrostatic discharges
EP92830477A EP0532481B1 (en) 1991-09-12 1992-09-11 Electrostatic discharge protective structure
DE69220159T DE69220159T2 (de) 1991-09-12 1992-09-11 Schutzstruktur gegen elektrostatische Entladungen
JP4270983A JPH05308124A (ja) 1991-09-12 1992-09-14 静電的放電に対する保護構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITVA910029A IT1253682B (it) 1991-09-12 1991-09-12 Struttura di protezione dalle scariche elettrostatiche

Publications (3)

Publication Number Publication Date
ITVA910029A0 ITVA910029A0 (it) 1991-09-12
ITVA910029A1 ITVA910029A1 (it) 1993-03-12
IT1253682B true IT1253682B (it) 1995-08-22

Family

ID=11423149

Family Applications (1)

Application Number Title Priority Date Filing Date
ITVA910029A IT1253682B (it) 1991-09-12 1991-09-12 Struttura di protezione dalle scariche elettrostatiche

Country Status (5)

Country Link
US (1) US5341005A (it)
EP (1) EP0532481B1 (it)
JP (1) JPH05308124A (it)
DE (1) DE69220159T2 (it)
IT (1) IT1253682B (it)

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EP0658938B1 (en) * 1993-12-15 2001-08-08 STMicroelectronics S.r.l. An integrated circuit comprising an EEPROM cell and a MOS transistor
EP0689248B1 (en) * 1994-06-20 1998-05-13 STMicroelectronics S.r.l. Integrated device with a surface electrical field delimiting structure and relative fabrication process
US5607867A (en) * 1994-07-15 1997-03-04 Texas Instruments Incorporated Method of forming a controlled low collector breakdown voltage transistor for ESD protection circuits
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US5841169A (en) * 1996-06-27 1998-11-24 Harris Corporation Integrated circuit containing devices dielectrically isolated and junction isolated from a substrate
US5850095A (en) * 1996-09-24 1998-12-15 Texas Instruments Incorporated ESD protection circuit using zener diode and interdigitated NPN transistor
US5808342A (en) * 1996-09-26 1998-09-15 Texas Instruments Incorporated Bipolar SCR triggering for ESD protection of high speed bipolar/BiCMOS circuits
JP3436462B2 (ja) * 1996-11-01 2003-08-11 三菱電機株式会社 半導体装置
DE19743240C1 (de) 1997-09-30 1999-04-01 Siemens Ag Integrierte Halbleiterschaltung mit Schutzstruktur zum Schutz vor elektrostatischer Entladung
DE19746410C2 (de) * 1997-10-21 1999-11-25 Bosch Gmbh Robert ESD-Schutzvorrichtung für integrierte Schaltungen
DE69739267D1 (de) * 1997-12-31 2009-04-02 St Microelectronics Srl Methode und Schaltung zur Verbesserung der Eigenschaften eines ESD-Schutzes für integrierte Halbleiterschaltungen
US6236087B1 (en) * 1998-11-02 2001-05-22 Analog Devices, Inc. SCR cell for electrical overstress protection of electronic circuits
WO2000042658A1 (de) * 1999-01-15 2000-07-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Esd-schutztransistor
DE19950811C2 (de) * 1999-01-15 2001-09-20 Fraunhofer Ges Forschung ESD-Schutztransistor mit einstellbarer Haltespannung
US6424013B1 (en) * 1999-07-09 2002-07-23 Texas Instruments Incorporated Body-triggered ESD protection circuit
TW469622B (en) 1999-09-13 2001-12-21 Koninkl Philips Electronics Nv Semiconductor device with ESD protection
DE10028008A1 (de) * 2000-06-06 2001-12-13 Bosch Gmbh Robert Schutzvorrichtung gegen elektrostatische Entladungen
US6472286B1 (en) * 2000-08-09 2002-10-29 Taiwan Semiconductor Manufacturing Company Bipolar ESD protection structure
EP1255301B1 (en) * 2001-04-27 2013-03-27 Imec Layout configurable electrostatic discharge device for integrated circuits
WO2004025702A2 (en) * 2002-09-11 2004-03-25 Pan Jit Americas, Inc Electrostatic discharge protection device for high speed transmission lines
US7026705B2 (en) * 2003-02-28 2006-04-11 Renesas Technology Corp. Semiconductor device with surge protection circuit capable of preventing current leakage
JP4549071B2 (ja) * 2003-02-28 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置
TW200417106A (en) * 2003-02-28 2004-09-01 Renesas Tech Corp Semiconductor device with surge protection circuit
US7074687B2 (en) 2003-04-04 2006-07-11 Freescale Semiconductor, Inc. Method for forming an ESD protection device
DE102005028919B4 (de) * 2005-06-22 2010-07-01 Infineon Technologies Ag Verfahren zum Herstellen eines elektronischen Bauelementes und elektronisches Bauelement
JP2007103420A (ja) * 2005-09-30 2007-04-19 Mitsumi Electric Co Ltd 半導体装置
DE202007009699U1 (de) * 2007-07-11 2007-09-06 Infineon Technologies Ag Überspannungs-Schutzvorrichtung sowie zugehörige Schutzschaltung
US7638857B2 (en) * 2008-05-07 2009-12-29 United Microelectronics Corp. Structure of silicon controlled rectifier
JP5529414B2 (ja) * 2008-12-29 2014-06-25 新日本無線株式会社 静電破壊保護回路
JP5529436B2 (ja) * 2009-04-28 2014-06-25 新日本無線株式会社 静電破壊保護回路
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US8665571B2 (en) 2011-05-18 2014-03-04 Analog Devices, Inc. Apparatus and method for integrated circuit protection
US8432651B2 (en) * 2010-06-09 2013-04-30 Analog Devices, Inc. Apparatus and method for electronic systems reliability
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8466489B2 (en) 2011-02-04 2013-06-18 Analog Devices, Inc. Apparatus and method for transient electrical overstress protection
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US8680620B2 (en) 2011-08-04 2014-03-25 Analog Devices, Inc. Bi-directional blocking voltage protection devices and methods of forming the same
US8947841B2 (en) 2012-02-13 2015-02-03 Analog Devices, Inc. Protection systems for integrated circuits and methods of forming the same
US8829570B2 (en) 2012-03-09 2014-09-09 Analog Devices, Inc. Switching device for heterojunction integrated circuits and methods of forming the same
US8946822B2 (en) 2012-03-19 2015-02-03 Analog Devices, Inc. Apparatus and method for protection of precision mixed-signal electronic circuits
US8610251B1 (en) 2012-06-01 2013-12-17 Analog Devices, Inc. Low voltage protection devices for precision transceivers and methods of forming the same
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JP6007606B2 (ja) * 2012-06-18 2016-10-12 富士電機株式会社 半導体装置
US8796729B2 (en) 2012-11-20 2014-08-05 Analog Devices, Inc. Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same
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US9006781B2 (en) 2012-12-19 2015-04-14 Analog Devices, Inc. Devices for monolithic data conversion interface protection and methods of forming the same
US9123540B2 (en) 2013-01-30 2015-09-01 Analog Devices, Inc. Apparatus for high speed signal processing interface
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US9147677B2 (en) 2013-05-16 2015-09-29 Analog Devices Global Dual-tub junction-isolated voltage clamp devices for protecting low voltage circuitry connected between high voltage interface pins and methods of forming the same
US9171832B2 (en) 2013-05-24 2015-10-27 Analog Devices, Inc. Analog switch with high bipolar blocking voltage in low voltage CMOS process
US9059324B2 (en) * 2013-06-30 2015-06-16 Texas Instruments Incorporated Bi-directional ESD diode structure with ultra-low capacitance that consumes a small amount of silicon real estate
US9484739B2 (en) 2014-09-25 2016-11-01 Analog Devices Global Overvoltage protection device and method
US9373615B2 (en) * 2014-11-03 2016-06-21 Texas Instruments Incorporated Bipolar transistor including lateral suppression diode
US9478608B2 (en) 2014-11-18 2016-10-25 Analog Devices, Inc. Apparatus and methods for transceiver interface overvoltage clamping
US10068894B2 (en) 2015-01-12 2018-09-04 Analog Devices, Inc. Low leakage bidirectional clamps and methods of forming the same
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
US9673187B2 (en) 2015-04-07 2017-06-06 Analog Devices, Inc. High speed interface protection apparatus
US9831233B2 (en) 2016-04-29 2017-11-28 Analog Devices Global Apparatuses for communication systems transceiver interfaces
US10734806B2 (en) 2016-07-21 2020-08-04 Analog Devices, Inc. High voltage clamps with transient activation and activation release control
US10249609B2 (en) 2017-08-10 2019-04-02 Analog Devices, Inc. Apparatuses for communication systems transceiver interfaces
US10276558B1 (en) 2017-10-30 2019-04-30 International Business Machines Corporation Electrostatic discharge protection using vertical fin CMOS technology
US10700056B2 (en) 2018-09-07 2020-06-30 Analog Devices, Inc. Apparatus for automotive and communication systems transceiver interfaces
US11387648B2 (en) 2019-01-10 2022-07-12 Analog Devices International Unlimited Company Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces

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JPS61264754A (ja) * 1985-05-17 1986-11-22 Mitsubishi Electric Corp 半導体集積回路装置
JPH0770709B2 (ja) * 1986-03-27 1995-07-31 株式会社東芝 半導体素子の入力保護装置

Also Published As

Publication number Publication date
ITVA910029A1 (it) 1993-03-12
EP0532481B1 (en) 1997-06-04
JPH05308124A (ja) 1993-11-19
DE69220159D1 (de) 1997-07-10
DE69220159T2 (de) 1997-10-30
ITVA910029A0 (it) 1991-09-12
EP0532481A1 (en) 1993-03-17
US5341005A (en) 1994-08-23

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929