IT1254948B - Circuito generatore di una tensione di riferimento - Google Patents

Circuito generatore di una tensione di riferimento

Info

Publication number
IT1254948B
IT1254948B ITMI921017A ITMI921017A IT1254948B IT 1254948 B IT1254948 B IT 1254948B IT MI921017 A ITMI921017 A IT MI921017A IT MI921017 A ITMI921017 A IT MI921017A IT 1254948 B IT1254948 B IT 1254948B
Authority
IT
Italy
Prior art keywords
reference voltage
resistor
generating circuit
generator
circuit
Prior art date
Application number
ITMI921017A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of ITMI921017A0 publication Critical patent/ITMI921017A0/it
Publication of ITMI921017A1 publication Critical patent/ITMI921017A1/it
Application granted granted Critical
Publication of IT1254948B publication Critical patent/IT1254948B/it

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)

Abstract

Circuito generatore di tensione di riferimento che riceve una corrente costante e genera una tensione di riferimento, generatore comprendente un generatore di tensione di riferimento 30 che eroga una tensione di riferimento determinata dal prodotto della corrente di riferimento per la resistenza del resistore collegando il resistore tra l'uscita del generatore di tensione di riferimento 30 e la massa. Il resistore è formato collegando in serie tra loro un diodo MOS e un transistor MOS controllato da una tensione di riferimento. In tal modo Il circuito è insensibile alla temperatura e alle variazioni dei processi di fabbricazione.
ITMI921017A 1992-03-18 1992-04-29 Circuito generatore di una tensione di riferimento IT1254948B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920004474A KR950010284B1 (ko) 1992-03-18 1992-03-18 기준전압 발생회로

Publications (3)

Publication Number Publication Date
ITMI921017A0 ITMI921017A0 (it) 1992-04-29
ITMI921017A1 ITMI921017A1 (it) 1993-10-29
IT1254948B true IT1254948B (it) 1995-10-11

Family

ID=19330566

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921017A IT1254948B (it) 1992-03-18 1992-04-29 Circuito generatore di una tensione di riferimento

Country Status (7)

Country Link
JP (1) JPH0643953A (it)
KR (1) KR950010284B1 (it)
DE (1) DE4214106A1 (it)
FR (1) FR2688904B1 (it)
GB (1) GB2265478B (it)
IT (1) IT1254948B (it)
TW (1) TW250603B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9423034D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A reference circuit
DE69521287T2 (de) * 1995-03-24 2002-05-02 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Schaltungsanordnung zur Erzeugung einer Referenzspannung und Detektion eines Versorgungsspannungsabfalls und zugehöriges Verfahren
KR100496792B1 (ko) * 1997-09-04 2005-09-08 삼성전자주식회사 기준전압발생회로
US6242972B1 (en) * 1999-10-27 2001-06-05 Silicon Storage Technology, Inc. Clamp circuit using PMOS-transistors with a weak temperature dependency
KR101133758B1 (ko) * 2005-01-19 2012-04-09 삼성전자주식회사 센서 및 이를 구비한 박막 트랜지스터 표시판
JP5482126B2 (ja) * 2009-11-13 2014-04-23 ミツミ電機株式会社 参照電圧発生回路および受信回路
CN107015594A (zh) * 2017-05-30 2017-08-04 长沙方星腾电子科技有限公司 一种偏置电流产生电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56121114A (en) * 1980-02-28 1981-09-22 Seiko Instr & Electronics Ltd Constant-current circuit
US4464588A (en) * 1982-04-01 1984-08-07 National Semiconductor Corporation Temperature stable CMOS voltage reference
US4446383A (en) * 1982-10-29 1984-05-01 International Business Machines Reference voltage generating circuit
US4847518A (en) * 1987-11-13 1989-07-11 Harris Semiconductor Patents, Inc. CMOS voltage divider circuits
GB2214333B (en) * 1988-01-13 1992-01-29 Motorola Inc Voltage sources
JP2674669B2 (ja) * 1989-08-23 1997-11-12 株式会社東芝 半導体集積回路
KR920004587B1 (ko) * 1989-10-24 1992-06-11 삼성전자 주식회사 메모리장치의 기준전압 안정화회로

Also Published As

Publication number Publication date
GB2265478B (en) 1996-01-03
JPH0643953A (ja) 1994-02-18
FR2688904A1 (fr) 1993-09-24
GB9209196D0 (en) 1992-06-17
KR950010284B1 (ko) 1995-09-12
ITMI921017A0 (it) 1992-04-29
KR930020658A (ko) 1993-10-20
GB2265478A (en) 1993-09-29
FR2688904B1 (fr) 1994-06-03
ITMI921017A1 (it) 1993-10-29
DE4214106A1 (de) 1993-09-23
TW250603B (it) 1995-07-01

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970429