PT730679E - Reactor epitaxial, susceptor e sistema de escoamento de gas - Google Patents

Reactor epitaxial, susceptor e sistema de escoamento de gas

Info

Publication number
PT730679E
PT730679E PT95933371T PT95933371T PT730679E PT 730679 E PT730679 E PT 730679E PT 95933371 T PT95933371 T PT 95933371T PT 95933371 T PT95933371 T PT 95933371T PT 730679 E PT730679 E PT 730679E
Authority
PT
Portugal
Prior art keywords
susceptor
pct
inductor
disc
chamber
Prior art date
Application number
PT95933371T
Other languages
English (en)
Inventor
Vincenzo Ogliari
Preti Franco
Vittorio Pozzetti
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11369629&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=PT730679(E) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lpe Spa filed Critical Lpe Spa
Publication of PT730679E publication Critical patent/PT730679E/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
PT95933371T 1994-09-30 1995-09-14 Reactor epitaxial, susceptor e sistema de escoamento de gas PT730679E (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI941997A IT1271233B (it) 1994-09-30 1994-09-30 Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati

Publications (1)

Publication Number Publication Date
PT730679E true PT730679E (pt) 2002-05-31

Family

ID=11369629

Family Applications (1)

Application Number Title Priority Date Filing Date
PT95933371T PT730679E (pt) 1994-09-30 1995-09-14 Reactor epitaxial, susceptor e sistema de escoamento de gas

Country Status (12)

Country Link
US (1) US6022412A (pt)
EP (1) EP0730679B1 (pt)
JP (1) JP3967375B2 (pt)
KR (1) KR100380642B1 (pt)
CN (1) CN1081683C (pt)
AT (1) ATE210746T1 (pt)
DE (1) DE69524563T2 (pt)
DK (1) DK0730679T3 (pt)
ES (1) ES2166833T3 (pt)
IT (1) IT1271233B (pt)
PT (1) PT730679E (pt)
WO (1) WO1996010659A2 (pt)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19821007A1 (de) * 1998-05-11 1999-11-25 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Substraten
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
ITMI20020306A1 (it) * 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
JP4192148B2 (ja) * 2002-06-10 2008-12-03 東京エレクトロン株式会社 原子層堆積法処理装置
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
WO2005121417A1 (en) * 2004-06-09 2005-12-22 E.T.C. Epitaxial Technology Center S.R.L. Support system for treatment apparatuses
JP2006253696A (ja) * 2005-03-10 2006-09-21 Asm America Inc ガスインジェクタ制御システム
JP2007149774A (ja) * 2005-11-24 2007-06-14 Sharp Corp 気相成長装置
US8430965B2 (en) * 2007-02-16 2013-04-30 Pronomic Industry Ab Epitaxial growth system for fast heating and cooling
US8067061B2 (en) * 2007-10-25 2011-11-29 Asm America, Inc. Reaction apparatus having multiple adjustable exhaust ports
US8628616B2 (en) * 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US8404049B2 (en) 2007-12-27 2013-03-26 Memc Electronic Materials, Inc. Epitaxial barrel susceptor having improved thickness uniformity
EP2271587A1 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Gold-coated polysilicon reactor system and method
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
JP5410086B2 (ja) * 2008-12-19 2014-02-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
IT1393695B1 (it) 2009-04-17 2012-05-08 Lpe Spa Camera di reazione di un reattore epitassiale e reattore che la utilizza
JP5444961B2 (ja) * 2009-09-01 2014-03-19 東京エレクトロン株式会社 成膜装置及び成膜方法
EP2486174A4 (en) * 2009-10-09 2013-11-06 Cree Inc DEVICE FOR EPITAXIAL FARMING WITH MULTIPLE TURNING ANGLE AND REACTORS THEREOF
TWM392431U (en) * 2010-02-04 2010-11-11 Epistar Corp Systems for epitaxial growth
CN102330147B (zh) * 2010-07-14 2015-11-25 郭志凯 一种硅片生产外延设备及其系统
JP2012054508A (ja) * 2010-09-03 2012-03-15 Tokyo Electron Ltd 成膜装置
CN102277563A (zh) * 2011-08-03 2011-12-14 深圳大学 一种旋转感应热沉积制备涂层或薄膜的装置及方法
CN102277603A (zh) * 2011-08-03 2011-12-14 深圳大学 一种感应热/电沉积制备涂层或薄膜的装置及方法
CN102347258B (zh) * 2011-09-19 2013-01-09 东莞市中镓半导体科技有限公司 一种用于半导体外延系统的基座
KR101928356B1 (ko) 2012-02-16 2018-12-12 엘지이노텍 주식회사 반도체 제조 장치
CN102707249A (zh) * 2012-07-03 2012-10-03 汤丽萍 一种核磁共振成像仪器的射频线圈
US9581255B2 (en) 2012-07-23 2017-02-28 Henning, Inc. Multiple proportion delivery systems and methods
CN107658241A (zh) * 2013-04-26 2018-02-02 应用材料公司 吸收性灯头面
US9842753B2 (en) 2013-04-26 2017-12-12 Applied Materials, Inc. Absorbing lamphead face
CN104250849B (zh) * 2013-06-25 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及外延生长设备
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
CN105350073B (zh) * 2015-10-30 2018-09-25 中国电子科技集团公司第四十八研究所 一种硅外延设备的石墨盘旋转密封装置及自动上下料系统
IT201600099783A1 (it) * 2016-10-05 2018-04-05 Lpe Spa Reattore per deposizione epitassiale con riflettore esterno alla camera di reazione e metodo di raffreddamento di un suscettore e di substrati
IT201600111143A1 (it) * 2016-11-04 2018-05-04 Lpe Spa Metodo di riscaldamento per un reattore per deposizione epitassiale e reattore per deposizione epitassiale
CN109136885B (zh) * 2017-06-19 2020-11-10 北京北方华创微电子装备有限公司 线圈调节机构、感应加热装置和气相沉积设备
TWI709203B (zh) * 2018-09-11 2020-11-01 大陸商北京北方華創微電子裝備有限公司 腔室冷卻裝置及半導體加工設備
IT202100014984A1 (it) * 2021-06-09 2022-12-09 Lpe Spa Camera di reazione con sistema di rivestimento e reattore epitassiale
CN115161766B (zh) * 2022-07-14 2024-04-26 中国电子科技集团公司第四十八研究所 硅外延设备的石墨基座旋转结构及石墨基座水平调节方法
CN117660917A (zh) * 2023-12-27 2024-03-08 浙江求是半导体设备有限公司 加热装置和外延工艺设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964430A (en) * 1974-11-14 1976-06-22 Unicorp Incorporated Semi-conductor manufacturing reactor instrument with improved reactor tube cooling
US4284867A (en) * 1979-02-09 1981-08-18 General Instrument Corporation Chemical vapor deposition reactor with infrared reflector
JPS5816523A (ja) * 1981-07-23 1983-01-31 Shimada Phys & Chem Ind Co Ltd 半導体気相成長装置
JPS58158438U (ja) * 1982-04-16 1983-10-22 東芝機械株式会社 エピタキシヤル成長装置のコイル保持装置
FR2566808B1 (fr) * 1984-06-27 1986-09-19 Mircea Andrei Procede et reacteur de croissance epitaxiale en phase vapeur
JPS61159574A (ja) * 1984-12-31 1986-07-19 Sony Corp 高周波誘導加熱気相反応装置
US5244694A (en) * 1987-06-24 1993-09-14 Advanced Semiconductor Materials America, Inc. Apparatus for improving the reactant gas flow in a reaction chamber
US5062386A (en) * 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
US5098857A (en) * 1989-12-22 1992-03-24 International Business Machines Corp. Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy
DE69126724T2 (de) * 1990-03-19 1998-01-15 Toshiba Kawasaki Kk Vorrichtung zur Dampfphasenabscheidung
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
US5478429A (en) * 1993-01-20 1995-12-26 Tokyo Electron Limited Plasma process apparatus

Also Published As

Publication number Publication date
ITMI941997A1 (it) 1996-03-30
WO1996010659A2 (en) 1996-04-11
DK0730679T3 (da) 2002-03-25
US6022412A (en) 2000-02-08
KR100380642B1 (ko) 2003-07-23
IT1271233B (it) 1997-05-27
JPH09505798A (ja) 1997-06-10
KR960706577A (ko) 1996-12-09
CN1081683C (zh) 2002-03-27
ITMI941997A0 (it) 1994-09-30
EP0730679B1 (en) 2001-12-12
ES2166833T3 (es) 2002-05-01
JP3967375B2 (ja) 2007-08-29
WO1996010659A3 (en) 1996-05-23
CN1139460A (zh) 1997-01-01
ATE210746T1 (de) 2001-12-15
EP0730679A1 (en) 1996-09-11
DE69524563D1 (de) 2002-01-24
DE69524563T2 (de) 2002-05-29

Similar Documents

Publication Publication Date Title
DE69524563D1 (de) Epitaxie reaktor, susceptor und gasströmungssystem
US6468433B1 (en) Method for disinfecting liquids and gases and devices for use thereof
TW340138B (en) Apparatus for low pressure chemical vapor deposition the invention relates to an apparatus for low pressure chemical vapor deposition
MX9700586A (es) Reactor de plasma acoplado inductivamente y proceso para fabricar un dispositivo semiconductor.
CA2471518A1 (en) Chemical reactor and fuel cell system
AU6659386A (en) Magneto-optical recording system
DK0897316T3 (da) Fremgangsmåde og apparat til diffusionsudveksling mellem ublandbare væsker
IT8405131A0 (it) Valvola per fluidi in genere con piastrine in ceramica per la tenuta in chiusura e per regolare il flusso di fluido erogato.
DE69124389D1 (de) Mit mindestens einer gaseinlass- und gasauslassoffnung versehene hohlelektrode und solche elektrode enthaltende elektrochemische zelle
ATE32437T1 (de) Verfahren und reaktor zur durchfuehrung einer endothermen reaktion.
JPS59140365A (ja) 光化学蒸着装置
DK153106C (da) Fremgangsmaade og indretning til at optimere varmeoverfoerslen af baereorganer for reversible, heterogene fordampningsprocesser
Gurary et al. Thermal and flow issues in the design of metalorganic chemical vapor deposition reactors
JP3867616B2 (ja) 半導体製造装置および方法
NO904165L (no) Kjemisk reaktor med gassavskiller samt ramme til bruk i reaktoren.
WO1997022973A3 (de) Kugelhaufenreaktor
DE60009557D1 (de) Druckregler
SE9401148D0 (sv) Förfarande och anordning för säkerställande av termisk skärm mellan ytor med skild temperatur
IT8522383A0 (it) Valvola di intercettazione a farfalla a tenuta perfezionata, particolarmente perl'intercettazione di fluidi ad elevate temperature.
SE8703182D0 (sv) Reaktionscell for epitaxiell tillvext av halvledarmaterial
GEU1999519Y (en) Device for Cultivation of Microorganisms
JPS56169321A (en) Silicon carbide semiconductor
DK99485A (da) Fremgangsmaade og anlaeg til fordeling af varmeenergi, vaesker og luftformige medier
JPS6474075A (en) Heat and electricity supply system
JPS6453083A (en) Fluid pump