IT1274540B - Metodo e dispositivo per eseguire la sfaldatura in ultra-vuoto di porzioni di wafer di semiconduttore processato - Google Patents

Metodo e dispositivo per eseguire la sfaldatura in ultra-vuoto di porzioni di wafer di semiconduttore processato

Info

Publication number
IT1274540B
IT1274540B ITMI951036A ITMI951036A IT1274540B IT 1274540 B IT1274540 B IT 1274540B IT MI951036 A ITMI951036 A IT MI951036A IT MI951036 A ITMI951036 A IT MI951036A IT 1274540 B IT1274540 B IT 1274540B
Authority
IT
Italy
Prior art keywords
sheeting
ultra
empty
carrying
semiconductor wafer
Prior art date
Application number
ITMI951036A
Other languages
English (en)
Inventor
Luigi Angelo Colombani
Original Assignee
Alcatel Italia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Italia filed Critical Alcatel Italia
Priority to ITMI951036A priority Critical patent/IT1274540B/it
Publication of ITMI951036A0 publication Critical patent/ITMI951036A0/it
Priority to EP96107228A priority patent/EP0744796A1/en
Priority to US08/646,587 priority patent/US5829658A/en
Priority to JP8127474A priority patent/JPH0917750A/ja
Publication of ITMI951036A1 publication Critical patent/ITMI951036A1/it
Application granted granted Critical
Publication of IT1274540B publication Critical patent/IT1274540B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y10T225/12—With preliminary weakening
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/30—Breaking or tearing apparatus
    • Y10T225/307—Combined with preliminary weakener or with nonbreaking cutter
    • Y10T225/321—Preliminary weakener
    • Y10T225/325—With means to apply moment of force to weakened work
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/30—Breaking or tearing apparatus
    • Y10T225/371—Movable breaking tool

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)
ITMI951036A 1995-05-22 1995-05-22 Metodo e dispositivo per eseguire la sfaldatura in ultra-vuoto di porzioni di wafer di semiconduttore processato IT1274540B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ITMI951036A IT1274540B (it) 1995-05-22 1995-05-22 Metodo e dispositivo per eseguire la sfaldatura in ultra-vuoto di porzioni di wafer di semiconduttore processato
EP96107228A EP0744796A1 (en) 1995-05-22 1996-05-08 Method and device for carrying out the cleavage in ultra-high-vacuum environment of portions of a processed semiconductor wafer
US08/646,587 US5829658A (en) 1995-05-22 1996-05-08 Method and device for carrying out the cleavage in ultra-high vacuum environment of portions of a processed semiconductor wafer
JP8127474A JPH0917750A (ja) 1995-05-22 1996-05-22 処理された半導体ウェハの部分の劈開を超高真空環境において行う方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI951036A IT1274540B (it) 1995-05-22 1995-05-22 Metodo e dispositivo per eseguire la sfaldatura in ultra-vuoto di porzioni di wafer di semiconduttore processato

Publications (3)

Publication Number Publication Date
ITMI951036A0 ITMI951036A0 (it) 1995-05-22
ITMI951036A1 ITMI951036A1 (it) 1996-11-22
IT1274540B true IT1274540B (it) 1997-07-17

Family

ID=11371642

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI951036A IT1274540B (it) 1995-05-22 1995-05-22 Metodo e dispositivo per eseguire la sfaldatura in ultra-vuoto di porzioni di wafer di semiconduttore processato

Country Status (4)

Country Link
US (1) US5829658A (it)
EP (1) EP0744796A1 (it)
JP (1) JPH0917750A (it)
IT (1) IT1274540B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6096638A (en) 1995-10-28 2000-08-01 Nec Corporation Method for forming a refractory metal silicide layer
US6140603A (en) * 1999-03-31 2000-10-31 Taiwan Semiconductor Manufacturing Co., Ltd Micro-cleavage method for specimen preparation
US6267282B1 (en) * 1999-04-01 2001-07-31 Agere Systems Optoelectronics Guardian Corp. Method and apparatus for handling laser bars
US6451120B1 (en) * 2000-09-21 2002-09-17 Adc Telecommunications, Inc. Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers
CN104752237B (zh) * 2015-03-19 2017-07-11 鞍山市联达电子有限公司 一种可控硅封装方法及封装模具
CN121282716B (zh) * 2025-12-08 2026-03-20 四川九华光子通信技术有限公司 一种to封装光器件压接装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1260264A (en) * 1917-03-02 1918-03-19 John Huszar Wad-cutter.
US3149765A (en) * 1963-05-28 1964-09-22 Western Electric Co Apparatus for removing waffrs from semiconductor slices
US3297015A (en) * 1964-03-30 1967-01-10 Delbert R Long Masonry cutter
US3790051A (en) * 1971-09-07 1974-02-05 Radiant Energy Systems Semiconductor wafer fracturing technique employing a pressure controlled roller
GB1373201A (en) * 1973-05-23 1974-11-06 Pates R Cutting or severing apparatus
US4068788A (en) * 1975-09-29 1978-01-17 Rca Corporation Method for cracking brittle material
US4044937A (en) * 1975-10-21 1977-08-30 International Business Machines Corporation Multiple ball element wafer breaking apparatus
GB2038163B (en) * 1978-11-16 1983-01-19 Neaverson R Cuttin device particularly for seat belts
US4248369A (en) * 1979-08-02 1981-02-03 General Electric Company Laser cutting of ceramic tubing
JPS6416610A (en) * 1987-07-10 1989-01-20 Nippon Mining Co Cleaving device
JPH01166593A (ja) * 1987-12-22 1989-06-30 Nec Kansai Ltd 半導体レーザの劈開方法
US5042352A (en) * 1990-06-04 1991-08-27 Strippit, Incorporated Quick change tool holder
JP3077910B2 (ja) * 1991-01-31 2000-08-21 株式会社小松製作所 半導体ウェハの加工方法
JP3315694B2 (ja) * 1991-08-14 2002-08-19 セラ・セミコンダクター・エンジニアリング・ラボラトリーズ 半導体ウェハーをへき開するための方法
US5154333A (en) * 1991-10-30 1992-10-13 International Business Machines Corporation Jaw cleaving device

Also Published As

Publication number Publication date
JPH0917750A (ja) 1997-01-17
ITMI951036A0 (it) 1995-05-22
EP0744796A1 (en) 1996-11-27
ITMI951036A1 (it) 1996-11-22
US5829658A (en) 1998-11-03

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Legal Events

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